Detection and characterization of single-electron-trap in a semiconductor based on a metal-tip-induced current noise mechanism

2018 Fiscal Year Final Research Report

• Project/Area Number: 16K14240
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Hokkaido University
• Principal Investigator: Kasai Seiya 北海道大学, 量子集積エレクトロニクス研究センター, 教授 (30312383)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Keywords: 半導体 / 単一電子トラップ / 走査プローブ / 表面準位 / 容量結合 / 電流雑音

Outline of Final Research Achievements

A novel characterization technique for detecting single electron trap in a semiconductor surface has been developed in this research project. The characterization system is composed by integrating a scanning probe microscope, achieving atomic-scale spatial resolution owing to a very narrow metal tip, and a charge amplification mechanism using a semiconductor nanowire through the local capacitive coupling between the metal tip and the electron trap. The dynamic behavior of the electron in a single trap is detected as current noise in the semiconductor nanowire and the electric properties of the trap are characterized by the noise analysis. This characterization technique has been successfully applied to the characterization of the single molecular nano-particles.

Free Research Field

半導体電子デバイス

Academic Significance and Societal Importance of the Research Achievements

半導体デバイスのなかに存在する電子の落とし穴である電子トラップは、電子の流れをゆがめたり電子が持っているエネルギーを奪い熱にかえてしまう。これらはデバイスの特性を劣化させたり、デバイス寿命を縮める原因になっている。本研究の成果は、個々の電子トラップの位置とその性質を捉える計測技術を提供することで、電子トラップが悪影響をおよぼすメカニズムの理解を助け、電子デバイスの安定動作や電子機器の長寿命化に貢献する。