Monolithic Integrated Terahertz Transceiver using Resonant Tunneling Diodes

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K14246
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: SUZUKI SAFUMI 東京工業大学, 工学院, 准教授 (40550471)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: テラヘルツ / 増幅器

Outline of Final Research Achievements

We proposed and designed a monolithic integrated terahertz (THz) transceiver using resonant tunneling diodes (RTDs), and investigated fundamental operation principle. We simulated the amplifier gain using electromagnetic simulation of the circuit and measured THz characteristics with THz vector network analyzer. From the simulation, we obtained an amplifier gain of ~2 dB at around 1 THz range using RTDs with 0.4 square micron mesa. We fabricated the 300 GHz device for preliminary experiments. However, the amplification was not obtained because of parasitic oscillation with biasing circuit. THz amplification can be obtained by suppress the parasitic oscillation.

Free Research Field

テラヘルツエレクトロニクス