• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2017 Fiscal Year Final Research Report

Monolithic Integrated Terahertz Transceiver using Resonant Tunneling Diodes

Research Project

  • PDF
Project/Area Number 16K14246
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electron device/Electronic equipment
Research InstitutionTokyo Institute of Technology

Principal Investigator

SUZUKI SAFUMI  東京工業大学, 工学院, 准教授 (40550471)

Project Period (FY) 2016-04-01 – 2018-03-31
Keywordsテラヘルツ / 増幅器
Outline of Final Research Achievements

We proposed and designed a monolithic integrated terahertz (THz) transceiver using resonant tunneling diodes (RTDs), and investigated fundamental operation principle. We simulated the amplifier gain using electromagnetic simulation of the circuit and measured THz characteristics with THz vector network analyzer. From the simulation, we obtained an amplifier gain of ~2 dB at around 1 THz range using RTDs with 0.4 square micron mesa. We fabricated the 300 GHz device for preliminary experiments. However, the amplification was not obtained because of parasitic oscillation with biasing circuit. THz amplification can be obtained by suppress the parasitic oscillation.

Free Research Field

テラヘルツエレクトロニクス

URL: 

Published: 2019-03-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi