Development of electro-magnetic phase switching device with non-volatile operation at room temperature

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K14377
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tokyo Institute of Technology (2017); Hokkaido University (2016)
• Principal Investigator: KATASE TAKAYOSHI 東京工業大学, 科学技術創成研究院, 准教授 (90648388)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: 薄膜トランジスタ / 酸化・還元 / 電気化学 / 不揮発メモリ / 酸化物磁性体

Outline of Final Research Achievements

A reversibly switchable electro-magnetic phase switching device was demonstrated by using a thin‐film transistor (TFT) structure with a water-infiltrated nanoporous glass as a gate insulator, for the development of new functional switching device that can control electric and magnetic signals at the same time. The TFT structure was fabricated on SrCoOx thin film and the electro-magnetic behavior of the device can be electrically switched from antiferromagnetic insulator to ferromagnetic metal at room temperature. In addition, it was found that the amorphous NaTaOx films with nanopillar array structure work as leakage-free alkaline electrolyte, which enabled the reversible phase switching under DC voltage of ±3 V in 2-3 sec. at room temperature. The result provides a novel design concept for multi-functional memory devices.

Free Research Field

酸化物エレクトロニクス