2017 Fiscal Year Final Research Report
Rapid solution growth of SiC using 100% Cr solvent
| Project/Area Number |
16K14445
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Metal making/Resorce production engineering
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2016-04-01 – 2018-03-31
|
| Keywords | シリコンカーバイド / 溶液成長 |
|---|
| Outline of Final Research Achievements |
A study has been carried out to evaluate the effect of degree of supersaturation of carbon on solution growth behavior of 4H-SiC by using Cr-Si alloy solvent. At first, carbon solubilities of Cr-Si alloys at 1550 - 2000 °C were measured to assess degree of supersaturation during the growth experiments. Solution growths of SiC were then performed at 1700 °C by using Cr-Si alloy solvents with three different compositions. When Si-rich solvents were used, lateral growth of 4H-SiC was disturbed by the two-dimensional nucleation of 3C-SiC. On the contrary, Cr-rich solvents, which possess low degree of supersaturation, enabled the lateral growth to be maintained even under the rapid growth over 1 mm/h. It was thus clarified that the Cr-rich solvent is effective to achieve low temperature and rapid growth because of its low degree of supersaturation, which results in suppression of two-dimensional nucleation.
|
| Free Research Field |
高温物理化学
|
