2017 Fiscal Year Final Research Report
Single Photon Source and Qubits Based on Lanthanide Doped GaN
| Project/Area Number |
16K17507
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials
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| Research Institution | National Institutes for Quantum and Radiological Science and Technology |
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Principal Investigator |
Sato Shin-ichiro 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 主任研究員(定常) (40446414)
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| Research Collaborator |
WAKAHARA Akihiro
OKADA Hiroshi
DEKI Manato
NAKAMURA Tohru
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Keywords | 窒化ガリウム / ランタノイド / 単一光子源 |
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| Outline of Final Research Achievements |
Praseodymium (Pr) doped GaN has the potential to be "single photon source" which is used for basic technology of quantum telecommunication. In this study, high concentration Pr doping into a microscopic region (1um x 1um x 50nm) on GaN was realized by using photolithography, ion implantation, and high temperature annealing techniques. Also, photoluminescence from Pr ions in the microscopic region was successfully observed with high-contrast by a high precision confocal microscopy at room temperature. We conclude that by father improving nano-patterning technique, activation of Pr ions, and sensitivity of the confocal microscope, the single photon emission from single Pr ions could be observed and controlled at room temperature.
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| Free Research Field |
半導体物理工学
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