Development of crystal defect revelation technique for next-generation power semiconductor material Ga2O3

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K17516
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Japan Fine Ceramics Center
• Principal Investigator: YAO YONGZHAO 一般財団法人ファインセラミックスセンター, その他部局等, 上級研究員 (80523935)
• Research Collaborator: ISHIKAWA Yukari ファインセラミックスセンター, 材料技術研究所, 主席研究員 ; SUGAWARA Yoshihiro ファインセラミックスセンター, ナノ構造研究所, 上級研究員 ; TAKAHASHI Yumiko 高エネルギー加速器研究機構, 物質構造科学研究所, 研究員 ; HIRANO Keiichi 高エネルギー加速器研究機構, 物質構造科学研究所, 准教授
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: gallium oxide / dislocation / X-ray topography / etch pit / TEM

Outline of Final Research Achievements

In high voltage and high current power devices, the presence of dislocations can adversely affect device performance and device lifetime. The purpose of this study is to establish dislocation detection and classification technology necessary to reduce dislocations in power semiconductor material Ga2O3.
In this study, we evaluated the crystallinity of Ga2O3 single crystals by using multiple techniques, such as XRD, XRT, Raman and FIB-TEM. Based on the results obtained, we established a chemical etching method that can quickly and accurately detect and classify various types of dislocations in a short period of time. Furthermore, the accuracy of the etching dislocation detection method was proved by X-ray crystallography technique and electron microscope observation.

Free Research Field

材料工学　半導体材料欠陥評価