2017 Fiscal Year Annual Research Report
Probing THz Evanescent Waves of Non-equilibrium Dynamics
| Project/Area Number |
16K17517
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| Research Institution | The University of Tokyo |
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Principal Investigator |
林 冠廷 東京大学, 生産技術研究所, 特任助教 (70772309)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Keywords | Near-field microscopy / THz image / Noise image / Graphene / Current crowding effect |
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| Outline of Annual Research Achievements |
Detecting dynamics of carrier in nano-device is a challenge for decades. To solve the issue, we use a THz scanning near-field optical microscope (SNOM) to realize the detection.
In graphene and NiCr device, excess noise-induced evanescent wave was detected. According to simulation, the near-field (NF) intensity is consistent with the current distribution. In GaAs semiconductor device, the NF signal extending out of the constriction region was detected, which originates from energy dissipation of hot electron. In summary, the THz SNOM is a novel equipment for studying nanoscale carrier dynamics.
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Research Products
(6 results)
