Development of nanoionics-based nonvolatile memory using field effect transistor structure

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K17520
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: TSUCHIYA Takashi 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究員 (70756387)
• Research Collaborator: TERABE Kazuya 国立研究開発法人・物質・材料研究機構, 国際ナノアーキテクトニクス拠点, MANA主任研究者 (60370300) ; HIGUCHI Tohru 東京理科大学, 理学部第一部応用物理学科, 准教授 (80328559)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: 固体イオニクス / 抵抗変化メモリ / 不揮発性メモリ / ナノイオニクス / 酸化還元トランジスタ / 原子スイッチ

Outline of Final Research Achievements

Resistive random access memory devices with field effect transistor structure were fabricated to improve operation performance and to derive novel functions related to nanoionic phenomena. H+ and electron mixed conducting WO3-based redox transistor showed reversible resistance switching due to H+ insertion/desertion. Furthermore, it showed nonvolatile and characteristic resistance switching which can be applied to develop novel neuromorphic device. SrVO3-based redox transistors were fabricated by using H+ or Li+ conducting solid electrolytes. Although similar electronic carrier doping behavior due to the monovalent cation was expected, the two devices showed completely different electronic conduction characteristic. While the H+ device showed relatively large drain current enhancement (9%), the Li+ device showed very small one (0.2%). The result indicated that used H+ or Li+ gives different effect on the local environment near V4+ ions (V-O-V angle).

Free Research Field

固体イオニクス