2016 Fiscal Year Research-status Report
High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junction
| Project/Area Number |
16K17533
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
Zhang Kexiong 名古屋工業大学, 工学(系)研究科(研究院), 研究員 (80774463)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Keywords | GaN / Polarization Effect / Semiconductor Device / 2-dimensional hole gas |
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| Outline of Annual Research Achievements |
(1)High quality p-GaN with smooth surface and low dislocation density has been realized by using MOCVD.
(2)The surface properties of p-GaN epilayer and interface properties of p-GaN in device structure have been investigated in detail, which found that the defects induced by Mg accumulated on the p-GaN surface will degraded the device performance. (3) p-channel GaN MOSFET has been realized successfully by using polarization-induced 2-dimensional(2D)hole gas. The work proved that the device design theory of GaN polarization-induced effect can be utilized to realize 2D electron gas and 2D hole gas, which will beneficial for the further development of polarization-induced tunneling junction.
(4)Three papers have been published and two presentations have been given in international conferences.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
1. High quality p-GaN with smooth surface and good crystalline quality has been realized by MOCVD.
2. The surface properties of p-GaN epilayer and interface properties of p-GaN in device structure has been investigated in detail.
3. The theoretical design of polarization-induced tunneling junction has been finished by using simulation software.
4. The polarization-induced effect of GaN has been utilized to realize 2-dimensional hole gas, which will guide the further work of polarization-induced tunneling junction.
5. The deposition of MQWs on p-GaN are in progress.
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| Strategy for Future Research Activity |
1. The deposition of MQWs on polarization-induced tunneling junction will be started to investigate the optical properties.
2. The device processing will be developed to get a real device for the investigation of electrical properties.
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| Causes of Carryover |
The research needs funding to prepare experimental materials, publish and present the research results.
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| Expenditure Plan for Carryover Budget |
1. Purchase experimental material; such as Metal-organic source, substrate,chemical solution
2. Conference presentation fee
3. Journal publication fee
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