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2017 Fiscal Year Research-status Report

High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junction

Research Project

Project/Area Number 16K17533
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

Zhang Kexiong  国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員 (80774463)

Project Period (FY) 2016-04-01 – 2019-03-31
KeywordsGaN / Tunneling Junction / LED / Long Wavelength
Outline of Annual Research Achievements

1)The fabrication processing of LED device, such as lithography, metal deposition,mesa isolation and dielectric passivation has been improved.
2)The epitaxy of tunneling junction has been optimized in epilayer thickness, doing concentration, and alloy composition.
3)The device processing of tunneling junction has been optimized.
4)The epitaxy of multiple quantum wells (MQWs) has been improved in growth temperature, quantum well thickness and alloy composition.
5)Simulation of tunneling junction for the better device performance has been finished.Simulation results has been used to guide the epitaxial process of tunneling juncton and MQWs.
6)The device characteristics of tunneling junction has been investigated in current-voltage measurement.

Current Status of Research Progress
Current Status of Research Progress

3: Progress in research has been slightly delayed.

Reason

My research organization has been changed this year.
New training for device processing is underway.
Therefore, more time is greatly needed.
Moreover, because the epitaxial equipment for the tunneling junction and LED has been changed, the epitaxy conditions are being improved for the better performance of epilayer and device.

Strategy for Future Research Activity

1. To get further optimization of tunneling junction
2. Device processing of tunneling junction will be further improved
3. To deposit MQWs on tunneling junction
4. To fabricate and characterize the device of LED

Causes of Carryover

1.Budget for experimental consumable items.
2.Budget for conference and business trip.
3.Budget for publication fee.

  • Research Products

    (1 results)

All 2017

All Journal Article (1 results) (of which Peer Reviewed: 1 results)

  • [Journal Article] Demonstration of fully vertical GaN-on-Si Schottky diode2017

    • Author(s)
      Zhang K.、Mase S.、Nakamura K.、Hamada T.、Egawa T.
    • Journal Title

      Electronics Letters

      Volume: 53 Pages: 1610~1611

    • DOI

      10.1049/el.2017.3166

    • Peer Reviewed

URL: 

Published: 2018-12-17  

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