2018 Fiscal Year Annual Research Report
High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junction
| Project/Area Number |
16K17533
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Zhang Kexiong 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員 (80774463)
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Keywords | GaN / polarization / LED / tunneling junction |
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| Outline of Annual Research Achievements |
1.The epitaxy of InGaN/GaN MQWs with high indium composition and polarization-induced tunneling junction by using MOCVD was investigated.2.The optical properties of InGaN/GaN MQWs with high indium composition was investigated.The relationship between indium composition and performance of MQWs was analysed.3.The device processing of tunneling junction and LED was developed.
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