High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junction

2018 Fiscal Year Final Research Report

• Project/Area Number: 16K17533
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Optical engineering, Photon science
• Research Institution: National Institute of Advanced Industrial Science and Technology (2017-2018); Nagoya Institute of Technology (2016)
• Principal Investigator: Zhang Kexiong 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員 (80774463)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Keywords: GaN / LED / Polarization Engineering / Tunneling Junction

Outline of Final Research Achievements

The theory of polarization engineering was applied into the design of device structure of InGaN/GaN LED. At the end of the project, new device processing and epitaxial structure for long wavelength LED was developed.

Free Research Field

semiconductor and microelectronics

Academic Significance and Societal Importance of the Research Achievements

This research propose a novel device structure with advanced device theory toward the issue of developing high efficiency red and yellow InGaN/GaN LED.
The research has great potential in overcome the basic problem of InGaN/GaN LED to mitigate "the green gap".