2018 Fiscal Year Final Research Report
Development of purely-electronic resistive switching devices based on field-induced Mott transition
| Project/Area Number |
16K18073
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Keywords | 酸化物エレクトロニクス / 金属絶縁体転移 / 抵抗変化メモリ / エピタキシャル成長 / 強相関電子系 |
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| Outline of Final Research Achievements |
For metal-insulator transition in strongly correlated materials, increasing attention has been paid to the electronics applications, such as resistive switching memory based on the stable and controllable changes in the electrical resistance. In addition, some recent studies have suggested the occurrence of a new type of metal-insulator transition in such materials: “field-induced” metal-insulator transition where the transition is induced by purely electrical effects not by thermal effects through Joule heating. To clarify the mechanism and develop the applications, growth of epitaxial thin films and fabrication of device structures were performed for the electrical-type metal-insulator transition materials in the present study. Growth of single-crystalline epitaxial thin films was successfully achieved for Ca2RuO4, which is one of the most actively studied materials. Moreover, a field-induced resistive transition was clearly demonstrated in the epitaxial films of Ca2RuO4.
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| Free Research Field |
薄膜電子材料
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| Academic Significance and Societal Importance of the Research Achievements |
電場誘起型の金属絶縁体転移物質は、固体物理学的に未解明の現象を多く含む興味深い物質群であるとともに、電子デバイス応用に対しても高い可能性を持つ事が指摘されているが、良質な薄膜の作製が困難であるために、物性理解やデバイス開発が進展されていない状況にある。本研究では電場誘起型の金属絶縁体物質として近年注目を集めているCa2RuO4において、良質な薄膜の成長に初めて成功し、また薄膜での電場誘起型転移の観測にも成功した。これらの結果は、金属絶縁体転移に関わる多くの未解明現象の解明と、将来的にはメモリ素子の飛躍的な性能向上にもつながる事が期待される、重要な成果である。
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