High performance thin film solar cell without toxic element and rare metal

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K18081
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Nagano National College of Technology
• Principal Investigator: Momose Noritaka 長野工業高等専門学校, 電気電子工学科, 准教授 (00413774)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: 薄膜太陽電池 / 化合物半導体 / 薄膜の作成と評価 / 硫化物

Outline of Final Research Achievements

In this research, we challenged to develop Cu2(Sn,Si)3 (CTSiS) thin film which is composed only of environmental friendly materials and can be expected for high efficiency thin film solar cell. The band gap of 1.2 eV required for high performance solar cells was realized by replacing about 12% of Sn with Si. Sulfurization at higher than 620°C and Na doping were effective for increasing the crystal grain size, but it was also found that CTSiS transfered to a different phase with a band gap of 1.6 eV due to high temperature sulfurization.The Si composition in the CTSiS film was homogenized by carefully pretreatment of the sputter target material, but the problem of vaporization of Si during the sulfurization prosess was left.

Free Research Field

電気電子材料