2016 Fiscal Year Research-status Report
Fabrication of high current output fin-type diamond field-effect transistors
| Project/Area Number |
16K18096
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
劉 江偉 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 研究員 (30732119)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Keywords | Diamond / field-effect transistor / triple-gate / fin-type |
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| Outline of Annual Research Achievements |
In this project, novel triple-gate fin-type diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated to extend device downscaling and increase device output current. The achievements are shown below.
1. High-quality fin-patterns are formed successfully on diamond substrate by dry-etching process.
2. High-performance triple-gate MOSFETs are fabricated on the fin-pattern diamond substrate. Electrical properties of them are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate.
3. The triple-gate fin-type MOSFET's output current (174.2 mA/mm) is much higher than that of the planar-type device (45.2 mA/mm), and the on/off ratio and subthreshold swing are more than 108 and as low as 110 mV/dec, respectively.
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| Current Status of Research Progress |
Current Status of Research Progress
1: Research has progressed more than it was originally planned.
Reason
The initial plan during FY2016 is that the fin-pattern with smooth etching surface is formed on the diamond substrate by dry-etching process, and then the high-quality H-diamond epitaxial layer is grown on the fin-pattern diamond substrate by MPCVD.
After accomplishing his plan during FY2016, the applicant continues to fabricate the triple-gate MOSFETs on the fin-pattern diamond substrate and to investigate the electrical properties of them.
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| Strategy for Future Research Activity |
In the following studies, effects of fin-pattern numbers for each MOSFET, oxide insulator deposition temperature, and MOSFET device structure for the electrical properties of triple-gate MOSFETs would be investigated. The output current for the triple-gate diamond MOSFETs would be improved.
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| Causes of Carryover |
The applicant planned to buy the diamond substrate for the fabrication of electronic devices. However, the remaining fund is not enough to buy the substrate.
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| Expenditure Plan for Carryover Budget |
The applicant will use this fund and the FY2017's fund to buy the diamond substrate.
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