2017 Fiscal Year Annual Research Report
Fabrication of high current output fin-type diamond field-effect transistors
| Project/Area Number |
16K18096
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
劉 江偉 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 独立研究者 (30732119)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Keywords | Diamond / MOSFET / triple-gate / multi-gate / fin-type |
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| Outline of Annual Research Achievements |
The excellent physical properties of semiconductor diamond make it a promising candidate material for high-power and high-frequency electronic device fabrication. However, the lack of large-area single-crystal diamond wafers hinders practical device development. This issue has led us to downscale diamond electronic devices. The triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) architecture offers a way to extend device downscaling and increase device output current. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate MOSFET. The device’s electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET’s output current is much higher than that of the planar-type device, and the on/off ratio and subthreshold swing are more than 10e8 and as low as 110 mV/dec, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.
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