2016 Fiscal Year Research-status Report
Research on monolithically integrated autocorrelator using PIN-type silicon waveguide
| Project/Area Number |
16K18097
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Cong Guangwei 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (20470049)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Keywords | Autocorrelator / Silicon photonics / Optical autocorrelation / Photonic circuits / Monolithic integration |
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| Outline of Annual Research Achievements |
Achieving optical autocorrelation on silicon photonic chips will renovate conventional free-space-optics-based autocorrelator technologies and enable novel integrated functionalities such as on-chip pulse characterization and monitor. In H28, we studied the autocorrelation performance utilizing two-photon absorption (TPA) in silicon wire p-i-n waveguides and examined the autocorrelation accuracy for the first time in theory. It was proved that the TPA responsivity was enhanced by >60 times compared to the conventional bulk-like thick rib waveguides and <1% relative error was guaranteed in pulse width measurement for sub-watt ultrafast pulses. As predicted by our theoretical study, in experiment, we achieved a very high autocorrelation sensitivity (<10sup-8 Wsup2) in silicon p-i-n waveguides which was >100 times higher than the commercial two-photon-conductivity-type autocorrelator products. Interferometric autocorrelation operation was successfully demonstrated in this waveguide and accurate time-domain characterization of 1-ps-wide optical pulses was realized. We verified that silicon p-i-n waveguides exhibit high performance as integrated autocorrelation photodetectors.
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| Current Status of Research Progress |
Current Status of Research Progress
1: Research has progressed more than it was originally planned.
Reason
Research plan in H28 was all completed as it was originally planned and we achieved autocorrelation operation in the silicon p-i-n waveguide with a very high sensitivity that is beyond what we originally expected. Furthermore, we have also finished the design of passive components needed in monolithic integration of autocorrelator and the mask layout of monolithic autocorrealtor in H28, which was originally planned to be done in the second year.
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| Strategy for Future Research Activity |
We will continue the project as we originally planned in H29. First, the already-designed monolithically integrated autocorrelators will be fabricated. Then, we will verify the on-chip autocorrelation operation and evaluate the autocorrelation performance.
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