Development of the printed low-voltage operation organic transistors and its application to the pressure sensor sheet

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K21061
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Device related chemistry; Electronic materials/Electric materials
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: Sakai Heisuke 北陸先端科学技術大学院大学, 先端科学技術研究科, 助教 (30580401)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: 有機トランジスタ / 有機センサ / フレキシブルデバイス

Outline of Final Research Achievements

We developed a prototype of low-voltage pressure sensor by integrating an low-voltage operation organic field-effect transistor (OFET) and a sensing capacitor, which were fabricated by means of the solution process. Next, the piezoelectric polymer film was stacked onto the low-voltage OFET, and then the novel pressure sensor named Dual-gate OFET based pressure sensor was successfully fabricated. This device operated at 5 V and the change of the drain current as a function of pressure load was more than 2 order of magnitude. Then, we attempted to develop a flexible dual-gate OFET based pressure sensor. And the improvement of OFET performance was simultaneously addressed. Consequently, the pressure response of the device was successfully obtained at operation voltage of 3V.

Free Research Field

有機エレクトロニクス