• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2007 Fiscal Year Final Research Report Summary

Novel semiconductors with controlled both single-atom number and position

Research Project

Project/Area Number 17201026
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanomaterials/Nanobioscience
Research InstitutionWaseda University

Principal Investigator

ODOMARI Iwao  Waseda University, Faculty of Science and Engineering, Professor (30063720)

Co-Investigator(Kenkyū-buntansha) HORIKOSHI Yoshiji  Waseda University, Faculty of Science and Engineering, Professor (60287985)
SHINADA Takahiro  Consolidated Research Institute for Advanced Science and Medical Care, 先端科学・健康医療融合研究機構, Associate Professor (30329099)
Project Period (FY) 2005 – 2007
KeywordsSingle ion implantation / Semiconductor / Silicon / Impurity atom / Radom dopant fluctuation / Ordered dopant array / Impurity doping / Transistor
Research Abstract

Doping of impurity atoms into semiconductors is essential to achieving the proper function of semiconductor devices. So far the semiconductor has been assumed to be homogeneously doped in the active channel region. In the nano-scale semiconductor devices, however, the channel region will contain few dopant atoms and the assumption of uniform dopant distribution is no longer feasible. In this situation, the statistical fluctuation in dopant atom number due to random Poisson distribution will elicit deleterious effects on the device's functioning. We have been developing a single-ion implantation(SII) method that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached In this study, we have improved the beam diameter approximately 10nm by modifying the focused ion beam optics for the SII and achieved the single-ion detection efficiency 100% by detecting the change in drain-current induced by single-ion incidence. We have then fabricated semico … More nductor devices with ordered dopant arrays by the SII. Electrical measurements of the resulting transistors revealed that there are fewer device-to-device fluctuations in the threshold voltage (V_<th> ; the turn-on voltage of the device) of the devices with ordered dopant arrays than of those with conventional randomly doped distribution. We also found that the average value of V_<th> for the devices with ordered dopants is two times lower than that of the devices with a random distribution of dopants. We explain this pronounced difference in threshold voltage as follows : the uniformity of electrostatic potential lowers the voltage required to open the channel from source to drain, which allows for early turn-on in those parts of the channel that correspond to the positioning of the implanted ions and results in the lower threshold voltage. It must be noted that current technology, which is based on random distribution of ions, cannot control either the number or the positioning of the ions, while our method can control both the number and the positioning of the ions and that this control is essential for future nanoscale semiconductor devices. Less

  • Research Products

    (292 results)

All 2008 2007 2006 2005

All Journal Article (64 results) (of which Peer Reviewed: 32 results) Presentation (225 results) Book (2 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Singe-ion Irradiation-physics,technology and applications(Invited paper)2008

    • Author(s)
      I.Ohdomari
    • Journal Title

      J.Phys.D:Appl.Phys. 41

      Pages: 043001-1 043001-27

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Single-ion Irradiation-physics, technology and applications (Invited paper)2008

    • Author(s)
      I. Ohdomari
    • Journal Title

      J. Phys. D : Appl. Phys. 41

      Pages: 043001(27)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Production of Nanopatterns by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray2007

    • Author(s)
      C-J.Zhang, I.Ohdomari
    • Journal Title

      J.Nanosci.Nanotechnol. Vol.7,No.2

      Pages: 410-417

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Strain Distribution around SiO_2/Si Interface in Si Nanowires:A molecular Dynamics Study2007

    • Author(s)
      H.Ohta, I.Ohdomari
    • Journal Title

      Jpn.J.Appl.Phys 46

      Pages: 3277-3282

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Evaluation of phosphorous pile-up at the Si/SiO_2 interface2007

    • Author(s)
      A.Seike, I.Ohdomari
    • Journal Title

      IEEE Proc. 3

      Pages: 2172

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Surface modification of silicon with single ion irradiation2007

    • Author(s)
      I.Ohdomari, T.Kamioka
    • Journal Title

      App.Sur.Sci. 254

      Pages: 242-246

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] A New Kinetic Equation for Themal Oxidation of Silicon Replacing the Deal-Grove Equation2007

    • Author(s)
      T.Watanabe, I.Ohdomari
    • Journal Title

      ECS Transactions 6

      Pages: 465-481

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation2007

    • Author(s)
      A.Seike, I.Ohdomari
    • Journal Title

      Appl.Phys.Lett. Vol.91,No.6

      Pages: 062108-1 062108-3

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Equation2007

    • Author(s)
      T.Watanabe, I.Ohdomari
    • Journal Title

      Journal of Electrochemical Society 154

      Pages: G260-G267

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Low-temperature transport and ferromagnetism in GaAs-based structures with Mn2007

    • Author(s)
      V.A.Kulbachinskii, Y.Horikoshi
    • Journal Title

      J.Exp.Theo.Phys 105

      Pages: 170-173

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Characteristics of multivalent impurity doped C60 films grown by MBE2007

    • Author(s)
      J.Nishinaga, Y.Horikoshi
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 687-691

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Enhanced magnetization by modulated Mn delta doping in GaAs2007

    • Author(s)
      K.Yanagisawa, Y.Horikoshi
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 634-637

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Be and Mg co-doping in GaN2007

    • Author(s)
      A.Kawaharazuka, Y.Horikoshi
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 414-416

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy2007

    • Author(s)
      T.Chavanapanee, Y.Horikoshi
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 225-229

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Production of Nanopattems by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray2007

    • Author(s)
      G.-J. Zhang, T. Tanii, Y. Kanari, I. Ohdomari
    • Journal Title

      J. Nanosci. Nanotechnol. Vol.7, No.2

      Pages: 410-417

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Strain Distribution around SiO_2/Si Interface in Si Nanowires : A molecular Dynamics Study2007

    • Author(s)
      H. Ohta, T. Watanabe, I. Ohdomari
    • Journal Title

      1,Jpn. J. Appl. Phys. Vol.46

      Pages: 3277-3282

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Evaluation of phosphorous pile-up at the Si/SiO_2 interface2007

    • Author(s)
      A. Seike, I. Sano, K. Yamada, I. Ohdomari
    • Journal Title

      IEEE Proc. of the International Conference on Solid-State and Integrated Circuit Technology Vol.3

      Pages: 2172

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Surface modification of silicon with single ion irradiation2007

    • Author(s)
      I. Ohdomari, T. Kamioka
    • Journal Title

      App. Sur. Sci. 254

      Pages: 242-246

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Equation , Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics 9, R. E. Sah, et. al., Editors, ECS Transactions2007

    • Author(s)
      T. Watanabe, I. Ohdomari
    • Journal Title

      The Electochemical Society, Penningtin, NJ Vol.6

      Pages: 465-481

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation2007

    • Author(s)
      A. Seike, T. Tange, I. Sano, Y. Sugiura, D. Kosemura, A. Ogura, I. Ohdomari
    • Journal Title

      Appl. Phys. Lett. Vol.91, No.6

      Pages: 062108-1-062108-3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Equation2007

    • Author(s)
      T. Watanabe, I. Ohdomari
    • Journal Title

      Journal of Electrochemical Society Vol.154

      Pages: G260-G267

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Low-temperature transport and ferromagnetism in GaAs-based structures with Mn2007

    • Author(s)
      V.A. Kulbachinskii, P.V. Gurin, Y.A. Danilov, E.I. Malysheva, Y. Horikoshi, K. Onomitsu
    • Journal Title

      J. Exp. Theo. Phys. 105

      Pages: 170-173

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Characteristics of multivalent impurity doped C60 films grown by MBE2007

    • Author(s)
      J. Nishinaga, T. Aihara, A. Kawaharazuka, Y. Horikoshi
    • Journal Title

      J. Crystal Growth 301-302

      Pages: 687-691

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Enhanced magnetization by modulated Mn delta doping in GaAs2007

    • Author(s)
      K. Yanagisawa, S. Takeuchi, H. Yoshitake, K. Onomitsu, Y. Horikoshi
    • Journal Title

      J. Crystal Growth 301-302

      Pages: 634-637

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Be and Mg co-doping in GaN2007

    • Author(s)
      A. Kawaharazuka, T. Tanimoto, K. Nagai, Y. Tanaka, Y. Horikoshi
    • Journal Title

      J. Crystal Growth 301-302

      Pages: 414-416

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy2007

    • Author(s)
      T. Chavanapanee, Y. Horikoshi
    • Journal Title

      J. Crystal Growth 301-302

      Pages: 225-229

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification2006

    • Author(s)
      D.Ferrer, I.Ohdomari
    • Journal Title

      Appl.Phys.Lettt. 88

      Pages: 033116/1 033116/3

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] シリコンナノ構造配列の作製とバイオアプリケーション2006

    • Author(s)
      谷井 孝至
    • Journal Title

      金属 Vol.76,No.3

      Pages: 41-47

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Nanometer-Sized Polyradical Particles;Organic Magnetic Dot Array Fomled on a Silicon Microfabricated Substrate2006

    • Author(s)
      M.Tanaka, I.Ohdomari
    • Journal Title

      J.Polym.Sci. Part A

      Pages: 521-530

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures2006

    • Author(s)
      T.Chavanapranee, Y.Horikoshi
    • Journal Title

      J.Appl.Phys. 100(5)

      Pages: No.054505

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Nanoscale selective area epitaxy of C_<60> crystals on GaAs by molecular beam epitaxy2006

    • Author(s)
      J.Nishinaga, Y.Horikoshi
    • Journal Title

      J.Vac.Sci.Technol.B 24(3)

      Pages: 1587-1590

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate2006

    • Author(s)
      M.Fujita, Y.Horikoshi
    • Journal Title

      J.Vac.Sci.Technol.B. 24(3)

      Pages: 1668-1670

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy2006

    • Author(s)
      T.Chavanapranee, Y.Horikoshi
    • Journal Title

      Jpn.J.Appl.Phys. 45(6A)

      Pages: 4921-4925

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN2006

    • Author(s)
      K.T.Liu, Y.Horikoshi
    • Journal Title

      Microelectronics Journal 37(5)

      Pages: 417-420

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification2006

    • Author(s)
      D. Ferrer, T. Tanii, I. Matsuya, G. Zhong, S. Okamoto, H. Kawarada, T. Shinada, I. Ohdomari
    • Journal Title

      Appl. Phys. Lettt. 88

      Pages: 033116/1-033116/3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication of silicon nano structure arrays and its biomedical application2006

    • Author(s)
      T. Tanii, I. Ohdomari
    • Journal Title

      Metal Vol.76, No.3

      Pages: 41-47

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] New Linear-Parabolic Rate Equation for Thermal Oxidation of Silicon2006

    • Author(s)
      T. Watanabe, K. Tatsumura, I. Ohdomari
    • Journal Title

      Phys. Rev. Lett. Vol.96

      Pages: 196102-1-196102-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Packing of submeter-sized polysterene particles within the micrometer-sized recessed patterns on silicon substrate2006

    • Author(s)
      M. Tanaka, N. Shimamoto, T. Tanii, I. Ohdomari, H. Nishide
    • Journal Title

      Science and Technology of Advanced Materials 7

      Pages: 451-455

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Nanometer-Sized Polyradical Particles ; Organic Magnetic Dot Array Formed on a Silicon Microfabricated Substrate2006

    • Author(s)
      M.Tanaka, S.Imai, T.Tanii, Y.Numao, N.Shimamoto, I.Ohdomari, H.Nishide
    • Journal Title

      J. Polym. Sci. Part A

      Pages: 521-530

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures2006

    • Author(s)
      T. Chavanapranee, Y. Horikoshi
    • Journal Title

      J. Appl. Phys. 100(5), No.054505

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Nanoscale selective area epitaxy of C_<60> crystals on GaAs by molecular beam epitaxy2006

    • Author(s)
      J. Nishinaga, T. Aihara, T. Toda, F. Matsutani, Y. Horikoshi
    • Journal Title

      J. Vac. Sci. Technol. B. 24(3)

      Pages: 1587-1590

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate2006

    • Author(s)
      M. Fujita, R. Suzuki, M. Sasajima, T. Kosaka, Y. Deesirapipat, Y. Horikoshi
    • Journal Title

      J. Vac. Sci. Technol. B. 24(3)

      Pages: 1668-1670

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy2006

    • Author(s)
      T. Chavanapranee, D. Ichiryu, Y. Horikoshi
    • Journal Title

      Jpn. J. Appl. Phys. 45(6A)

      Pages: 4921-4925

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN2006

    • Author(s)
      K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi
    • Journal Title

      Microelectronics Journal 37(5)

      Pages: 417-420

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] A Novel Process for Fabrication of Gateed Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching2005

    • Author(s)
      T.Tanii, I.Ohdomari
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44,No.7A

      Pages: 5191-5192

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Reactions and Diffusion of Atomic and Molecular Oxygen in the SiO2 Network2005

    • Author(s)
      K.Tatsumura, I.Ohdomari
    • Journal Title

      Phys.Rev.B. 72

      Pages: 045205

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] ダイナミックポンド型分子動力学法の開発2005

    • Author(s)
      渡邉 孝信
    • Journal Title

      化学工業 Vol.56,No5

      Pages: 65-71

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Enhancing semiconductor device performance using ordered dopant arrays2005

    • Author(s)
      T.Shinada, I.Ohdomari
    • Journal Title

      Nature Vol.437/20

      Pages: 1128-1131

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Development of liquid-metal-ion source low-energy ion gun/high-temperature ultrahigh vacuum scanning tunneling microscope combined system2005

    • Author(s)
      M.Uchigasaki, I.Ohdomari
    • Journal Title

      Rev.Sci.Inst. Vol.76 No.126109

      Pages: 126109/1 126109/4

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE"2005

    • Author(s)
      K.Onomitsu, Y.Horikoshi
    • Journal Title

      J.Cryst.Growth 278

      Pages: 699-703

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Mechanical and optical characteristics of Al-doped C_<60> films2005

    • Author(s)
      J.Nishinaga, Y.Horikoshi
    • Journal Title

      J.Cryst.Growth 278

      Pages: 633-637

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Magnesium/nitrogen and beryllium/nitrogen co-implantation into GaN"2005

    • Author(s)
      K.T.Liu, Y.Horikoshi
    • Journal Title

      J.Appl.Phys. 98(7)

      Pages: No.073702

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] C and N co-implantation in Be-doped GaN2005

    • Author(s)
      K.T.Liu, Y.Horikoshi
    • Journal Title

      Semi.Sci.Technol. 20(8)

      Pages: 740-744

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] New Linear-Parabolic Rate Equation for Thermal Oxidation of Silicon2005

    • Author(s)
      T.Watanabe, I.Ohdomari
    • Journal Title

      Phys.Rev.Lett. 96

      Pages: 196102-1 196102-4

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Packing of submeter-sized polysterene particles within the micrometer-sized recessed patterns on silicon substrate2005

    • Author(s)
      M.Tanaka, I.Ohdomari
    • Journal Title

      Science and Technology of Advanced Materials 7

      Pages: 451-455

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] A Novel Process for Fabrication of Gateed Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching2005

    • Author(s)
      T. Tanii, S. Fujita, Y. Numao, I. Matsuya, M. Sakairi, M. Masahara, I. Ohdomari
    • Journal Title

      Jpn. J. Appl. Phys. Vol.44, No.7A

      Pages: 5191-5192

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Reactions and Diffusion of Atomic and Molecular Oxygen in the Si0_2 Network2005

    • Author(s)
      K. Tatsumura, T. Shimura, E. Mishima, K. Kawamura, D. Yamasaki, H. Yamamoto, T. Watanabe, M., Umeno, I. Ohdomari
    • Journal Title

      Phys. Rev. B 72

      Pages: 045205

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Dynamic bond-order molecular dynamics2005

    • Author(s)
      T. Watanabe
    • Journal Title

      Chemical Industry Vol.56, No.5

      Pages: 65-71

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Enhancing semiconductor device performance using ordered dopant arrays2005

    • Author(s)
      T. Shinada, S. Okamoto, T. Kobayashi, I. Ohdomari
    • Journal Title

      Nature Vol.437/20

      Pages: 1128-1131

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Development of liquid-metal-ion source low-energy ion gun/high-temperature ultrahigh vacuum scanning tunneling microscope combined system2005

    • Author(s)
      M. Uchigasaki, T. Kamioka, T. Hirata, T. Shimizu, F. Lin, T. Shinada, I. Ohdomari
    • Journal Title

      Rev. Sci. Inst. Vol.76, No.126109

      Pages: 126109/1-126109/4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005

    • Author(s)
      K. Onomitsu, H. Fukui, T. Maeda, Y. Hirayama, Y. Horikoshi
    • Journal Title

      J. Cryst. Growth 278

      Pages: 699-703

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Mechanical and optical characteristics of Al-doped C_<60> films2005

    • Author(s)
      J. Nishinaga, T. Aihara, H. Yamagata, Y. Horikoshi
    • Journal Title

      J. Crystal Growth 278

      Pages: 633-637

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Magnesium/nitrogen and beryllium/nitrogen co-implantation into GaN2005

    • Author(s)
      K.T. Liu, Y.K. Su, S.J. Chang, Y. Horikoshi
    • Journal Title

      J. Appl. Phys. 98(7), No.073702

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] C and N co-implantation in Be-doped GaN2005

    • Author(s)
      K.T. Liu, Y.K. Su, R.W. Chuang, S. I. Chang, Y. Horikoshi
    • Journal Title

      Semi. Sci. Technol. 20(8)

      Pages: 740-744

    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] AFM探針・基板間の水分子の挙動に関する分子動力学シミュレーション2008

    • Author(s)
      登坂 亮, 大泊 巌
    • Organizer
      春季第55回応用物理学会学術講演会
    • Place of Presentation
      日本大学理工学部、船橋
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 有機シラン単分子膜レジストへの電子線照射効果の解析2008

    • Author(s)
      三宅 丈雄, 大泊 巌
    • Organizer
      春季第55回応用物理学会学術講演会
    • Place of Presentation
      日本大学理工学部、船橋
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 有機シランSAMISiO_2構造モデルからのX線回折強度分布2008

    • Author(s)
      山本 英明, 大泊 巌
    • Organizer
      春季第55回応用物理学会学術講演会
    • Place of Presentation
      日本大学理工学部、船橋
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] ドーパントイオン照射過程のリアルタイムSTM観察のためのイオンビーム照準システム開発2008

    • Author(s)
      佐藤 光, 大泊 巌
    • Organizer
      春季第55回応用物理学会学術講演会
    • Place of Presentation
      日本大学理工学部、船橋
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] シリコン熱酸化速度の酸素分圧依存性の起源2008

    • Author(s)
      渡邉 孝信, 大泊 巌
    • Organizer
      春季第55回応用物理学会学術講演会
    • Place of Presentation
      日本大学理工学部、船橋
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 分子動力学法によるシリコンナノ構造酸化誘起歪の結晶方位依存性に関する研究2008

    • Author(s)
      恩田 知弥, 大泊 巌
    • Organizer
      春季第55回応用物理学会学術講演会
    • Place of Presentation
      日本大学理工学部、船橋
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] <110>,<100>チャネルを有したナノワイヤFETsのドレイン電圧依存性2008

    • Author(s)
      土田 育新, 大泊 巌
    • Organizer
      春季第55回応用物理学会学術講演会
    • Place of Presentation
      日本大学理工学部、船橋
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 歪ナノワイヤFETsにおけるPADOX理論による歪評価とトランジスタ特性の考察2008

    • Author(s)
      清家 綾, 大泊 巌
    • Organizer
      春季第55回応用物理学会学術講演会
    • Place of Presentation
      日本大学理工学部、船橋
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Molecular dynamics simulation on a behavior of water molecules between AFMprobe and SiO2 substrate2008

    • Author(s)
      R. Tosaka, H. Yamamoto, S. Ono, T. Watanabe, I. Ohdomari
    • Organizer
      The 55th Spring Autumn Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nihon University
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] AnALYSIS OF Electron-Beam Induced Modification in Organosilane Self-Assembled Monolayer Resist2008

    • Author(s)
      T, Miyake, T. Tanii, K. Kato, Y. Beppu, I. Ohdomari
    • Organizer
      The 55the Spring meeting of Japan Society of Applied Physiscs and Related Societies
    • Place of Presentation
      Nihon University
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] X-ray diffraction profiles from organosilane SAM/SiO2 models2008

    • Author(s)
      H. Yamamoto, T. Watanabe, I. Ohdomari
    • Organizer
      The 55th Spring meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nihon University
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Development of an ion beam alignment system for real-time STM observation of dopant-ion irradiation process2008

    • Author(s)
      K. Sato, T. Takefumi, Y. Kazama, I. Ohdomari
    • Organizer
      The 55th Spring meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nihon University
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Origin of Oxygen Partial Pressure Dependency of Thermal Oxidation Rate of Silicon2008

    • Author(s)
      T. Watanabe, H. Ohta, I. Ohdomari
    • Organizer
      The 55th Spring Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nihon University
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Molecular Dynamics study on the crystal orientation dependency of oxidation-induced strain in silicon nano-structure2008

    • Author(s)
      T. Onda, H. Ohta, T. Watanabe, I. Ohdomari
    • Organizer
      The 55th Spring Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nihon University
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of Vd dependence on nanowire FETs'performance with the channel direction of <100>or<110>.2008

    • Author(s)
      I. Tsuchida, T. Tange, A. Seike, I. Ohdomari
    • Organizer
      The 55th Spring Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nihon University
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Study on transistor performances of nanowire FETs by utilizing PADOX.2008

    • Author(s)
      A. Seike, I. Tsuchida, T. Tange, I. Ohdomari
    • Organizer
      The 55th Spring Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nihon University
    • Year and Date
      20080300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Semiconductors with ordered dopant array(Invited Speaker)2007

    • Author(s)
      T.Shinada, I.Ohdomari
    • Organizer
      International Workshop on Intelligent Nanoprocess
    • Place of Presentation
      Tohoku University
    • Year and Date
      20071200
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Semiconductors with ordered dopant array (Invited Speaker)2007

    • Author(s)
      T. Shinada, T. Kurosawa, M. Hori, I. Ohdomari
    • Organizer
      International Workshop on Intelligent Nanoprocess
    • Place of Presentation
      Tohoku University
    • Year and Date
      20071200
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] New kinetic theory for thermal oxidation of silicon replacing the Deal-Grove thewory2007

    • Author(s)
      T. Watanabe, H. Ohta, I. Ohdomari
    • Organizer
      The 27th meeting of Surface Science Society of Japan
    • Place of Presentation
      Tokyo University
    • Year and Date
      20071100
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Simulation on the electric conduction of semiconductor with arrayed dopant2007

    • Author(s)
      T. Terunuma, T. Watanabe, T. Shinada, Y. Kamakura, K. Taniguchi, I. Ohdomari
    • Organizer
      The 96th meeting of IEEE SDM
    • Place of Presentation
      The Machine Industry Promotional hall
    • Year and Date
      20071000
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 化合物半導体Self-Switching Diodeにおける製作プロセスの検討2007

    • Author(s)
      小松崎 優治, 堀越 佳治
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070904-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] MEE法によるGaAs選択成長におけるAs分子種の効果2007

    • Author(s)
      河原 塚篤, 堀越 佳治
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070904-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] MBE法によるGaAs(111)A基板上へのInAs薄膜成長と電気的特牲2007

    • Author(s)
      原田 亮平, 堀越 佳治
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070904-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] RF-MBE法によるBe,Mg空間分離ドープp型GaNの成長2007

    • Author(s)
      長井 健一郎, 堀越 佳治
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070904-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 単一イオン注入による酸化チタン光触媒活性の改質2007

    • Author(s)
      中山 英樹, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 単一イオン照射による細胞機能修飾2007

    • Author(s)
      朱 延偉, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Si:P系における金属絶縁体転移の評価2007

    • Author(s)
      佐野 一拓, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 分子動力学法によるSiO_2/Si界面近傍のボイド分布の解析2007

    • Author(s)
      太田 洋道, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 低速ドーパントイオン照射によるSi表面改質効果のその場STM観察2007

    • Author(s)
      神岡 武文, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] ナノホールアレイマスクによる不純物原子の規則配列形成2007

    • Author(s)
      黒沢 智紀, 品田 賢宏, 大泊巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] nanowhireFETsにおける相互コンダクタンスの熱酸化起因歪依存性評価(1)2007

    • Author(s)
      清家 綾, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] nanowireFETsにおける相互コンダクタンスの熱酸化膜起因歪依存性評価(2)2007

    • Author(s)
      丹下 智之, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 周期的な不純物原子配列を有する半導体の電気伝導シミュレーション2007

    • Author(s)
      照沼 知英, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 集束イオンビームによる打ち込みNi触媒からのCNT成長(II)2007

    • Author(s)
      森金 亮太, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Improvement fo photocatalytic-activety in titanium oxides by single-ion implantation2007

    • Author(s)
      H. Nakayama, T. Shinada, I. Ohdomari
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Study of metal-insulator transition in Si : P2007

    • Author(s)
      I. Sano, A. Seike, T. Shinada, I. Ohdomari
    • Organizer
      The 68th Autumn Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Analysis of void distribution around the SiO2/Si interface with molecular dynamics simulation2007

    • Author(s)
      H. Ohta, T. Watanabe, I. Ohdomari
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] In-situ STM observation of Si surface modified by low-energy dopant-ion beam2007

    • Author(s)
      T. Kamioka, K. Sato, I. Ohdomari
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Ordered impurity atom arrays using nano-xcale hole array mask2007

    • Author(s)
      T. Kurosawa, T. Shinada, M. Hori, N. Shimamoto, I. Ohdomari
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Transconductance enhancement of nanowire FETs by built-up stress during thermal osidation(1)2007

    • Author(s)
      A. Seike, T. Tange, I. Sano, Y. Sugiura, D. Kosemura, A. Ogura, I. Ohdomari
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Transconductance enhancement of nanowire FETs by built-up stress during thermal osidation(2)2007

    • Author(s)
      T. Tange, Y. Sugiura, I. Tsuchida, I. Sano, A. Seike, I. Ohdomari
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Simulation on the electric conduction of semiconductor with arrayed dopant2007

    • Author(s)
      T. Terunuma, T. Watanabe, T. Shinada, Y. Kamakura, K. Taniguchi, I. Ohdomari
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Synthesis of carbon nanotubes from Ni catalysts implanted by focused ion beam (II)2007

    • Author(s)
      R. Morikane, T. Iwasaki, T. Koide, S. Mejima, H. Nakayama, T. Shinada, I. Ohdomari, H. Kawarada
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Investigation of fabrication processes of compound semiconductor Self-Switching Diode2007

    • Author(s)
      Y Komatsuzaki, I. Yoshiba, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Effect of arsenic species to area selective epitaxy of GaAs by MEE2007

    • Author(s)
      A. Kawaharazuka, I. Yoshiba, Y. Horikoshi
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Growth of InAs on GaAs(111)A by MBE and their electric properties2007

    • Author(s)
      R. Harada, J. Nishinaga, T. Takada, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] RF-MBE growth of p-type GaN by Be, Mg specially doping2007

    • Author(s)
      K. Nagai, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      The 68th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Hokkaido Institute of University
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] nm-scale modification of solid surfaces for novel function creation2007

    • Author(s)
      I.Ohdomari
    • Organizer
      11th International conference on the Formation of Semiconductor Interfaces(11th ICFSI)
    • Place of Presentation
      Manaus,Brazil
    • Year and Date
      20070800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As_2 and As_4 arsenic sources2007

    • Author(s)
      A.Kawaharazuka, Y.Horikoshi
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces(11th ICFSI)
    • Place of Presentation
      Manaus,Brazil
    • Year and Date
      20070800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] nm-scale modification of solid surfaces for novel function creation2007

    • Author(s)
      I. Ohdomari
    • Organizer
      11th International conference on the Formation of Semiconductor Interfaces(11th ICFSI)
    • Place of Presentation
      Manaus, Amazonas, Brazil
    • Year and Date
      20070800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As_2 and As_4 arsenic sources2007

    • Author(s)
      Kawaharazuka, I. Yoshiba, Y. Horikoshi
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces (11th ICFSI)
    • Place of Presentation
      Manaus, Brazil
    • Year and Date
      20070800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Enhancing semiconductor device performance using ordered dopant arrays(Invited Speaker)2007

    • Author(s)
      T.Shinada, I.Ohdomari
    • Organizer
      2007 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto
    • Year and Date
      20070600
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Semiconductors with ordered Dopant Array and its electrical chanracteristics2007

    • Author(s)
      T. Shinada, T. Kurosawa, I. Ohdomari
    • Organizer
      JSPS151st Committee on Frontier Nano Device Technologies
    • Place of Presentation
      Invited Speaker
    • Year and Date
      20070600
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Enhancing semiconductor device performance using ordered dopant arrays(Inveted Speaker)2007

    • Author(s)
      T. Shinada, T. Kurosawa, M. Hori, I. Ohdomari
    • Organizer
      2007 Silicon Nanoelectroics Workshop
    • Place of Presentation
      Kyoto
    • Year and Date
      20070600
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Semiconductors with ordered single-dopant arrays(Invited Speaker)2007

    • Author(s)
      T.Shinada, I.Ohdomari
    • Organizer
      Silicon Nanoelectronics Workshop
    • Place of Presentation
      Leiden,The Netherlands
    • Year and Date
      20070500
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Semiconductors with ordered single-dopant arrays (Invited Speaker)2007

    • Author(s)
      T. Shinada, T. Kurosawa, M. Hori, I. Ohdomari
    • Organizer
      Silicon Nanoelectronics Workshop, Lorentz center,Leiden
    • Place of Presentation
      The Netherlands
    • Year and Date
      20070500
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 有機シラン単分子膜の電子線リソグラフィによる生体分子のナノパターニング(招待講演)2007

    • Author(s)
      谷井 孝至, 大泊 巌
    • Organizer
      春季第54回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] シリコンのドライ酸化とウェット酸化の統一運動理論2007

    • Author(s)
      渡邉 孝信, 大泊 巌
    • Organizer
      春季第54回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 分子動力学法によるシリコン酸化膜中の酸素分子拡散過程に関する研究II2007

    • Author(s)
      太田 洋道, 大泊 巌
    • Organizer
      春季第54回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Nanowire FETsにおける電気伝導特性のチャネル方位依存性2007

    • Author(s)
      清家 綾, 大泊 巌
    • Organizer
      春季第54回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 高温Si(111)表面への低速金属イオン照射効果のリアルタイムSTM観察(II)2007

    • Author(s)
      神岡 武文, 大泊 巌
    • Organizer
      春季第54回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Nanoscale patterning of biomolecules by a combination of electron beam lithography and a self-assembled monolayer2007

    • Author(s)
      T. Tanii, T. Miyake, H. Yamamoto, T Watanabe, I. Ohdomari
    • Organizer
      The 54th Spring meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Aoyama Gakuin University
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Unified kinetic theory ofr thermal oxidation of silicon in dry and wet ambients2007

    • Author(s)
      T. Watanabe, H. Ohta, I. Ohdomari
    • Organizer
      The 54th Spring meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Aoyama Gakuin University
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Study of diffusion process of molecular oxygen in silicon dioxide film with molecular dynamics simulation II2007

    • Author(s)
      H. Ohta, T. Watanabe, I. Ohdomari
    • Organizer
      The 54th Spring meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Aoyama Gakuin University
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of electrical properties 44dependence on the channel orientation for nanowire FETs2007

    • Author(s)
      A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Ohdomari
    • Organizer
      The 54th Spring meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Aoyama Gakuin University
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Real-time STMobservation of low-energy metal-ion irradiation onhigh-temperature Si(111) Surface(II)2007

    • Author(s)
      T. Kamioka, M. Uchigasaki, I. Ohdomari
    • Organizer
      The 54th Spring meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Aoyama Gakuin University
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 歪SiFETsの電気特性評価2007

    • Author(s)
      清家 綾、大泊 巌
    • Organizer
      第12回ゲートスタック研究会
    • Place of Presentation
      東レ総合研修センター、三島
    • Year and Date
      20070200
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 分子動力学法によるシリコンナノ構造対中の歪分布に関する研究2007

    • Author(s)
      太田 洋道, 大泊 巌
    • Organizer
      第12回ゲートスタック研究会
    • Place of Presentation
      東レ総合研修センター、三島
    • Year and Date
      20070200
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Electron Mobility Enhancement of Strain-Si FETs2007

    • Author(s)
      A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Ohdomari
    • Organizer
      12th Workshop on Gate Stack Technology and Physics
    • Place of Presentation
      Mishima Japan
    • Year and Date
      20070200
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Strain Distribution around SiO_2/Si Interface in Nanostructure : A Molecular Dynamics Study2007

    • Author(s)
      H. Ohta, T. Watanabe, I. Ohdomari
    • Organizer
      12th Workshop on Gate Stack Technology and Physics
    • Place of Presentation
      Mishima Japan
    • Year and Date
      20070200
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 不純物規則配列とFET特牲(招待講演)2007

    • Author(s)
      品田 賢宏、黒沢 智紀、大泊 巌
    • Organizer
      日本学術振興会 未踏・ナノデバイステクノロジー第151委員会
    • Place of Presentation
      静岡
    • Year and Date
      20070100
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Prospects for Regeneration of Si Technology(Plenary Speaker)2007

    • Author(s)
      I.Ohdomari
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN-9)
    • Place of Presentation
      Komaba Research Campus of The University of Tokyo
    • Year and Date
      2007-11-14
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Fabrication of High-Density Nanoetchpit Array by Electron Beam Lithography Using Alkylsilane Monolaver Resist2007

    • Author(s)
      M.Nakamoto, I.Ohdomari
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN-9)
    • Place of Presentation
      Komaba Research Campus of The University of Tokyo
    • Year and Date
      2007-11-14
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Prospects for Regeneration of Si Technology (plenary Speaker)2007

    • Author(s)
      I. Ohdomari
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN-9) , Komaba Research Campus of The University of Tokyo
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-14
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Fabrication of High-Density Nanoetchpit Array by Electron Beam Lithography Using Alkylsilane Monolayer Resist2007

    • Author(s)
      M. Nakamoto, T. Tanii, T. Hosaka T. Miyake Y. Kanari, K. Kato, I. Ohdomari
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN-9) , Komaba Research Campus of The University of Tokyo
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-14
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] General Kinetic Theory for Thermal Oxidation of Silicon2007

    • Author(s)
      T.Watanabe, I.Ohdomari
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN-9)
    • Place of Presentation
      Komaba Research Campus of The University of Tokyo
    • Year and Date
      2007-11-13
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] General Kinetic Theory for Thermal Oxidation of Silicon2007

    • Author(s)
      T. Watanabe, H. Ohta, I. Ohdomari
    • Organizer
      The 9th International Conference on Atomically Controlledc Surfaces, Interfaxes and Nanostructures(ACSIN-9)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-13
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 固体の微小部分析および改質の手段としてのシングルイオン照射 (招待講演)2007

    • Author(s)
      大泊 巌
    • Organizer
      日本学術振興会クラスターイオンビームテクノロジーワークショップ
    • Place of Presentation
      産業技術総合研究所臨海副都心センター
    • Year and Date
      2007-11-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Analysis of Electron Beam Sensitivity of Self-Assembled Monolayer Resist Depending on Terminal Group2007

    • Author(s)
      K.Kato, I.Ohdomari
    • Organizer
      20th International Microprocess and Nanotechnology Conference(MNC2007)
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-11-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Analysis of Electron BEAM Sensitivity of Self-Assembled Monolayer Resist Depending on Terminal Group2007

    • Author(s)
      K. Kato, T. Miyake, Y. Beppu, T. Tanii, I. Ohdomari
    • Organizer
      20th International Microprocess and NANOTECHNOLOGY Conference(mnc2007)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2007-11-06
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Deal-Grove理論に代わるシリコン熱酸化の新しい運動理論2007

    • Author(s)
      渡邉 孝信, 大泊 巌
    • Organizer
      第27回表面科学講演大会
    • Place of Presentation
      東京大学生産技術研究所
    • Year and Date
      2007-11-03
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] シングルイオン注入法の開発と半導体ナノテクノロジーへの応用に関する研究(招待講演)2007

    • Author(s)
      大泊 巌
    • Organizer
      第27回表面科学講演大会学会賞受賞記念講演
    • Place of Presentation
      東京大学生産技術研究所
    • Year and Date
      2007-11-02
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Development of Single Ion Implantation and Its Application to Semiconductor Nanotechnology (Invited Speaker)2007

    • Author(s)
      I. Ohdomari
    • Organizer
      Surface Science Society Award, The 27th meeting of Surface Science Society of Japan
    • Place of Presentation
      Tokyo University
    • Year and Date
      2007-11-02
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 周期的な不純物原子配列を有する半導体の電気伝導シミュレーション2007

    • Author(s)
      照沼 知英, 品田 賢宏, 大泊 巌
    • Organizer
      応用物学会シリコンテクノロジー分科会研究会
    • Place of Presentation
      機械振興会館,東京
    • Year and Date
      2007-10-30
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] シングルイオン注入法開発の経緯(招待講演)2007

    • Author(s)
      大泊 巌
    • Organizer
      日本学術振興会 未踏・ナノデバイステクノロジ第151委員会講演
    • Place of Presentation
      東京大学、東京
    • Year and Date
      2007-07-13
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] シングルイオン注入法の現状、課題、応用への展望(招待講演)2007

    • Author(s)
      品田 賢宏
    • Organizer
      日本学術振興会 未踏・ナノデバイステクノロジ第151委員会講演
    • Place of Presentation
      東京大学、東京
    • Year and Date
      2007-07-13
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Development of Single-ion implantation technology (Invited Speaker)2007

    • Author(s)
      I. Ohdomari
    • Organizer
      81st Workshop, JSPS 15st committee on Frontier Nano Device Technologies
    • Place of Presentation
      University of Tokyo
    • Year and Date
      2007-07-13
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Single-ion implantation technology-Current status, prospects for the application- (Invited Speaker)2007

    • Author(s)
      T. Shinada
    • Organizer
      81st Workshop, JSPS 15st committee on Frontier Nano Device Technologies
    • Place of Presentation
      University of Tokyo
    • Year and Date
      2007-07-13
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Fabrication of nm-Scale Structures on Solid Surfaces for Novel Function Creation(Invited Speaker)2007

    • Author(s)
      I.Ohdomari
    • Organizer
      14th International Symposium on Future-Oriented Interdisciplinary Materials Science
    • Place of Presentation
      EPOCHAL Tsukuba
    • Year and Date
      2007-05-12
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Eauation(Invited Speaker)2007

    • Author(s)
      T.Watanabe
    • Organizer
      9th International Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics
    • Place of Presentation
      Chicago,USA
    • Year and Date
      2007-05-09
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Equation (Invited Speaker)2007

    • Author(s)
      T. Watanabe
    • Organizer
      9th International Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics, 211th Meeting of The Electrochemical Society
    • Place of Presentation
      Chicago, USA
    • Year and Date
      2007-05-09
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Fabrication of nm-Scale Structures on Solid Surfaces for Novel Function Creation2007

    • Author(s)
      I. Ohdomari
    • Organizer
      14th International Symposium on Future-Oriented Interdisciplinary Materials Science, EPOCHAL Tsukuba : International Congress Center
    • Place of Presentation
      University of Tsukuba
    • Year and Date
      2007-03-12
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Electron mobility enhancement of strained-Si FETs2006

    • Author(s)
      A.Seike, I.Ohdomari
    • Organizer
      International Workshop on Dielectric Thin Films for future ULSI devices-science and technology
    • Place of Presentation
      Kawasaki
    • Year and Date
      20061108-10
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Strain Distribution around SiO2/Si Interface in Nanostructure:A molecular Dynamics Study2006

    • Author(s)
      H.Ohta, I.Ohdomari
    • Organizer
      International Workshop on Dielectric Thin Films for future ULSI devices-science and technology
    • Place of Presentation
      Kawasaki
    • Year and Date
      20061108-10
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Electron mobility enhancement of strained-Si FETs2006

    • Author(s)
      A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Ohdomari
    • Organizer
      International Workshop on Dielectric Thin Films for future ULSI devices-science and technology
    • Place of Presentation
      Kawasaki, Japan
    • Year and Date
      20061108-10
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Strain Distribution around SiO2/Si Interface in Nanostructure : A molecular Dynamics Study2006

    • Author(s)
      H. Ohta, T. Watanabe, I. Ohdomari
    • Organizer
      International Workshop on Dielectric Thin Films for future ULSI devices-science and technology
    • Place of Presentation
      Kawasaki, Japan
    • Year and Date
      20061108-10
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Be-Codoping Effect on Photoluminescence Characteristics of Si-doped GaAs2006

    • Author(s)
      T. Chavanaprance, Y. Horikoshi
    • Organizer
      24th North American Conferen ce on Molecular Beam Epitaxy(NAMBE2006)
    • Place of Presentation
      Durham, NC, USA
    • Year and Date
      20061008-11
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Process requirements for continued scaling semiconductor devices-The needs for controlling both number and position of impurity atoms(Invited Speaker)2006

    • Author(s)
      T.Shinada, I.Ohdomari
    • Organizer
      8th International Conference on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      Shanghai,China
    • Year and Date
      20061000
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Evaluation of Phosphorous Ple-up at the Si/SiO_2 Interface(Invited Speaker)2006

    • Author(s)
      A.Seike, I.Ohdomari
    • Organizer
      8th International Conference on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      Shanghai,China
    • Year and Date
      20061000
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Process requirements for continued scaling semiconductor devices-The needs for controlling both number and Position of impurity atoms2006

    • Author(s)
      T. Shinada, T. Kurosawa, T. Kobayashi, H. Nakayama, Y. Zhu, I. Ohdomari
    • Organizer
      8th International Conference on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      shanghai, China
    • Year and Date
      20061000
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of Phosphorous Ple-up at the Si/SiO_2 Interface2006

    • Author(s)
      A. Seike, I. Sano, K. Yamada, I. Ohdomari
    • Organizer
      8th International Conference on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      shanghai, China
    • Year and Date
      20061000
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A Substrate2006

    • Author(s)
      J.Nishinaga, Y.Horikoshi
    • Organizer
      International Conference on Solid State Devices and Materials(SSDM 2006)
    • Place of Presentation
      Yokohama
    • Year and Date
      20060912-15
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Electrical Properties of Ge-Doped InSb and InAs on GaAs(111) A Substrate2006

    • Author(s)
      J. Nishinaga, R. Harada, T. Takada, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      International Conference on Solid State Devices and Materials(SSDM 2006)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      20060912-15
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Characteristics of multivalent impurity doped C_<60> films grown by MBE2006

    • Author(s)
      J.Nishinaga, Y.Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Be and Mgco-doping in GaN2006

    • Author(s)
      A.Kawaharazuka, Y.Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Interplay of magnetization with the thickness between Mn δ layers induced GaAs2006

    • Author(s)
      K.Yanagisawa, Y.Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Area Selective Epitaxy of GaAs with AlGaAs Native Oxide Mask by Molecular-Beam Enitaxy2006

    • Author(s)
      I.Yoshiba, Y.Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] MBE growth of GaN on MgO substrate2006

    • Author(s)
      R.Suzuki, Y.Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Characterization of Heavily Sn-Doped GaAs Grown by Migration-Enhanced Epitaxy at Low Temperatures2006

    • Author(s)
      T.Chavanapranee, Y.Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] The strain effects in spin-related transport properties of ferromagnetic GaMnAs2006

    • Author(s)
      K.Onomitsu, Y.Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Characteristics of Multivalent impurity deped C_60 films grown byu MBE2006

    • Author(s)
      J. Nishinaga, T. Aihara, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Be and Mg co-doping in GaN2006

    • Author(s)
      A. Kawaharazuka, T. Tanimoto, K. Nagai, Y. Tanaka, Y. Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Interplay of magnetization with the thickness between Mn δ layers induced GaAs2006

    • Author(s)
      K. Yanagisawa, S. Takeuchi, H. Yositake, K. Onomitsu, Y. Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Area Selective Epitaxy of GaAs with AlGaAs Native Oxide Mask by Molecular-Beam Epitaxy2006

    • Author(s)
      I. Yoshiba, T. Iwai, T. Uehara, Y. Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] MBE growth of GaN on MgO substrate2006

    • Author(s)
      R. Suzuki, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Characterization of Heavily Sn-Doped GaAs Grown by Migration-Enhanced Epitaxy at Low Temperatures2006

    • Author(s)
      T. Chavanaprance, Y. Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] The strain effects in spin-related transport properties of ferromagnetic GaMnAs2006

    • Author(s)
      K. Onomitsu, H. Yamaguchi, Y. Hirayama, K. Yanagisawa, S. Takeuchi, H. Yoshitake, Y. Horikoshi
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20060903-08
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Real-time Detection of Single-Ion Impact using on-state Semiconductor Devices2006

    • Author(s)
      T.Shinada, I.Ohdomari
    • Organizer
      15th International Conference on Ion Beam Modification of Materials
    • Place of Presentation
      Taormina,Italy
    • Year and Date
      20060900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Diffusion Behavior of Doped Phosphorous Ions in Si nano-wire2006

    • Author(s)
      A.Seike, I. Ohdomari
    • Organizer
      15th International Conference on Ion Beam Modification of Materials
    • Place of Presentation
      Taormina,Italy
    • Year and Date
      20060900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Real-time Detection of Single-Ion Impact using on-state Semiconductor Devices2006

    • Author(s)
      T. Shinada, T. Kobayashi, H. Nkayama, T. Kurosawa, I. Ohdomari
    • Organizer
      15th International Conference on Ion Bcam Modification of Materials
    • Place of Presentation
      Taormina, Italy
    • Year and Date
      20060900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Diffusion Behavior of Doped Phosphorous Ions in Si nano-wire2006

    • Author(s)
      A. Sike, I. Sano, Y. Sugiura, I. Ohdomari
    • Organizer
      15th International Conference on Ion Bcam Modification of Materials
    • Place of Presentation
      Taormina, Italy
    • Year and Date
      20060900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 高濃度SiドープGaAs薄膜中へのBe共ドーピング効果2006

    • Author(s)
      チャバナパニートサポーン, 堀越 佳治
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060829-0901
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] GaMnAsの伝導特性における歪効果2006

    • Author(s)
      小野 満恒二, 堀越 佳治
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060829-0901
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 収束イオンビームによるBイオン注入ダイヤモンドの半導体特性2006

    • Author(s)
      小出 敬, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 有機シラン単分子膜の電子線描画による高密度ナノ構造配列形成2006

    • Author(s)
      中本 明季, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] OH末端を有する有機シラン単分子膜の電子線パターニングII2006

    • Author(s)
      加藤 浩一, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 高温Si(111)表面への低速金属イオン照射効果のリアルタイムSTM観察2006

    • Author(s)
      神岡 武文, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 電流変化検出型単一イオン検出システムの開発2006

    • Author(s)
      中山 英樹, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Siナノ細線におけるリン原子の挙動評価(4)2006

    • Author(s)
      清家 綾, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Siナノ細線中のリン原子拡散の酸化条件依存性2006

    • Author(s)
      丹下 智之, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 並列Siナノ細線TEGにおけるリン原子の電気伝導特性評価2006

    • Author(s)
      杉浦 裕樹, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 分子動力学法によるシリコン酸化膜中の酸素分子拡散過程に関する研究2006

    • Author(s)
      太田 洋道, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 低ドープSi抵抗体における不純物原子の離散性評価2006

    • Author(s)
      黒沢 智紀, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学、滋賀
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Semiconductor properties of B implantation diamond with FIB2006

    • Author(s)
      T. Koide, S. Mejima, K. Hirma, N. Tubouchi, M. Ogura, A. Chayahara, S. Shikata, T. Shinada, I. Ohodomari, H. Kawarada
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Fabrication of High-Density Nanostructur Array Using Electron Beam Lithography of Organosilane Self-Assembled Monolayer2006

    • Author(s)
      M. Nakamoto, T. Tanii, T. Hosaka T. Miyake Y. Kanari, K. Kato, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Patterning of Hydroxy-Terminated Organosilane Self-Assembled Monolayer by Means of Electron Beam Lithography II2006

    • Author(s)
      K. Kato, T. Miyake, T. Tanii, Y. Kanari, Y. Beppu, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Real-time STM observation of low-energy metal-ion irradiation of high-temperature Si(111) surface2006

    • Author(s)
      T. Kamioka, M. Uchigasaki, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Development of single ion detection system by detecting current variation2006

    • Author(s)
      H. Nakayama, T. Shinada, T. Kobayashi, T. kurosawa, Y. Zyu, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of phosphorous atoms in nano-Siwires(4)2006

    • Author(s)
      A. Seike, I. Sano, T. Tange, Y. Sugiura, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of oxidization condition dependence on phosphorous redistribution in Si nano-wire2006

    • Author(s)
      T. Tange, I. Sano, Y. Sugiura, A. Seike, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evanluation of electrical properties of phosphorous ions in parallel connected Si nano-wires2006

    • Author(s)
      Y. Sugiura, T. Tange, I. Sano, A. Seike, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Study of diffusion process of molecular oxygen in silicon dioxide film with molecular dynamics simulation2006

    • Author(s)
      H. Ohta, T. Watanabe, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Discreteness Evaluation of Impurities in Low Doped Si Resistors2006

    • Author(s)
      T. Kurosawa, T. Shinada, I. Ohdomari
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Strain effect on electrical properties of GaMnAs thin layers2006

    • Author(s)
      K. Onomitsu, H. Yamaguchi, Y. Horikoshi
    • Organizer
      The 67th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      20060800
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Nano-Scale Control of Semiconductor Device Performances by Single Ion Implantation(lnvited Speaker)2006

    • Author(s)
      T.Shinada, I.Ohdomari
    • Organizer
      14th International Conference on Composites/Nano Engineering
    • Place of Presentation
      Boulder,USA
    • Year and Date
      20060700
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Substantial need for controlling both imputiry atom number and position in future MOSFET2006

    • Author(s)
      T. Shinada, T. Kurosawa, I. Ohdomari
    • Organizer
      81TH Workshop for Silicon Technology Division
    • Place of Presentation
      JSAP, Osaka
    • Year and Date
      20060700
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Nano-Scale Control of Semiconductor Device Performances by Single Ion Implantation2006

    • Author(s)
      T. Shinada, T. Kurosawa, T. Kobayashi, H. Nakayama, I. Ohdomari
    • Organizer
      14th International Conference on Composites/Nano Engineering
    • Place of Presentation
      Boulder, USA
    • Year and Date
      20060700
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 次々世代MOSFETにおける不純物原子の個数・位置制御の必要性(招待講演)2006

    • Author(s)
      品田 賢宏、黒沢 智紀、大泊 巌
    • Organizer
      シリコンテクノロジー研究会第81回研究集会
    • Place of Presentation
      大阪
    • Year and Date
      20060600
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Ordered Dopant Arrays in Semiconductors by Single Ion Implantation(lnvited Speaker)2006

    • Author(s)
      T.Shinada, I.Ohdomari
    • Organizer
      6th International Workshop on Junction Technology
    • Place of Presentation
      Shanghai,China
    • Year and Date
      20060500
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Ordered Dopant Arrays in Semiconductors by Single Ion Implantation2006

    • Author(s)
      T. Shinada, S. Okamoto, T. Kurosawa, T. Kobayashi, H. Nakayama, D. Ferreer, I Ohdomari
    • Organizer
      6th International Workshop on Junction Technology
    • Place of Presentation
      Shanghai, China
    • Year and Date
      20060500
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Nanoscale Surface Modification of Silicon with Single Ions2006

    • Author(s)
      I. Ohdomari
    • Organizer
      8th International Conference on Advanced Surface Engineering(8th ICASE)
    • Place of Presentation
      Tokyo Ryutsu Center、 Tokyo
    • Year and Date
      20060400
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 金属元素ドーピングC<60>薄膜の結合について2006

    • Author(s)
      藍原 智之、堀越 佳治
    • Organizer
      春季第53回応用物理学関係連合講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060322-26
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] GaAs中の窒素原子対に束縛された励起子の動的観察2006

    • Author(s)
      小野 満恒二, 堀越 佳治
    • Organizer
      春季第53回応用物理学関係連合講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060322-26
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Ge 高濃度ドープGaAs の低温MEEによる成長2006

    • Author(s)
      チャバナパニートサポーン, 堀越 佳治
    • Organizer
      春季第53回応用物理学関係連合講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060322-26
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 極微細Si細線中における不純物原子の拡散評価2006

    • Author(s)
      清家 綾、大泊 巌
    • Organizer
      春季第53回応用物理学会学術講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 局所ドーパント濃度制御によるSi基板への選択めっき2006

    • Author(s)
      島本 直伸、大泊 巌
    • Organizer
      春季第53回応用物理学会学術講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Siナノ細線における不純物イオンの挙動評価(3)2006

    • Author(s)
      佐野 一拓、大泊 巌
    • Organizer
      春季第67回応用物理学会学術講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] シリコンナノ細線の熱酸化シミュレーション2006

    • Author(s)
      太田 洋道、大泊 巌
    • Organizer
      春季第53回応用物理学会学術講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 高温Si(001)表面への低速ドーパントイオン照射効果のSTM観察2006

    • Author(s)
      神岡 武文、大泊 巌
    • Organizer
      春季第53回応用物理学会学術講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 単一イオン注入誘起欠陥のシリコン抵抗体に与える電気的影響評価2006

    • Author(s)
      岡本 晋太郎、品田 賢宏、大泊 巌
    • Organizer
      春季第53回応用物理学会学術講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 電流変化検出型単一イオン検出システムの開発2006

    • Author(s)
      中山 英樹、品田 賢宏、大泊 巌
    • Organizer
      春季第53回応用物理学会学術講演会
    • Place of Presentation
      武蔵工業大学、東京
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Fabrication and Application of Low Resistive Layer by Ion Implantation2006

    • Author(s)
      K. Koide, T. Arai, S. Mejima, K. Hirama, K.S. Song, D. Ferrer, T. Shinada, I. Ohdomari, H. Kawarada
    • Organizer
      The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of dopant diffusion in the confined Si wire2006

    • Author(s)
      A. Seike, I. Sano, I. Ohdomari
    • Organizer
      The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Selective electro-deposition on Si wafer by controlling local dopant concentration2006

    • Author(s)
      N. Shimamoto, T. Kagasaki, T. Homma, T. Osaka, I. Ohdomari
    • Organizer
      The 53rd Sping meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of implanted impurity ions in nano-Si wires(3)2006

    • Author(s)
      I. Sano, A. Seike, I. Ohdomari
    • Organizer
      The 53rd Spring meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Simulation of thermal oxidation for silicon nano-wire2006

    • Author(s)
      H. Ohta, T. Watanabe, K. Tatsumura, I. Ohdomari
    • Organizer
      The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] STM observation of low-energy dopant-ion irradiation effect on high-temperature Si(001) Surface2006

    • Author(s)
      T. Kamioka, L. Feng, M. Uchigasaki, T. Hirata, T. Shimizu, I. Ohdomari
    • Organizer
      The 53rd Spring meeting of Japan Society of Applied Physics and Related sSocieties
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Electrical Estimation of Single-ion-induced Damage against lectron Mobility in SOI Layer2006

    • Author(s)
      S. Okamoti, T. Shinada, T. Kobayashi, T. Kurosawa, H. Nkayama, I. Odomari
    • Organizer
      The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Development of single ion detection system by detecting current variation2006

    • Author(s)
      H. Nakayama, T. Shinada, S. Okamoto, T. Kobayashi, T. Kurosawa, I. Ohdomari
    • Organizer
      The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] The study on bonding of metal-doping C_60 films2006

    • Author(s)
      T. Aihara, J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Dynamic characteristics of excitons bound to N-isoelectric traps in GaAs2006

    • Author(s)
      K. Onomitsu, T. Makimoto, H. Saito, K. Ploog Y. Horikoshi
    • Organizer
      The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Growth of heavily Ge-doped GAaS by MEE at low temperature2006

    • Author(s)
      T. Chavanapranee, Y. Horikoshi
    • Organizer
      The 53rd Spring Meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      20060300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Surface modification with single ion irradiation2006

    • Author(s)
      I. Ohdomari
    • Organizer
      13th International Conference on Solid Films and Surfaces(ICSFS-13) , San Carlos de Bariloche
    • Place of Presentation
      Argentina
    • Year and Date
      2006-11-13
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Surface modification with single ion irradiation(Invited Speaker)2006

    • Author(s)
      I.Ohdomari
    • Organizer
      13th International Conference on Solid Films and Surfaces(ICSFS-13)
    • Place of Presentation
      San Carlos de Bariloche,Argentina
    • Year and Date
      2006-11-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Single Ion Implantation into Silicon(Invited Speaker)2006

    • Author(s)
      I.Ohdomari
    • Organizer
      The 16th International Microscopy Congress(IMC16)
    • Place of Presentation
      Sapporo
    • Year and Date
      2006-09-08
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Single Ion Implantation into Silicon2006

    • Author(s)
      I. Ohdomari
    • Organizer
      The 16th International Microscopy Congress(IMC16)
    • Place of Presentation
      Sapporo
    • Year and Date
      2006-09-08
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Nanoscale Surface Modification of Silicon with Single Ions(lnvited Speaker)2006

    • Author(s)
      I.Ohdomari
    • Organizer
      8th International Conference on Advanced Surface Engineering(8th ICASE)
    • Place of Presentation
      Tokyo Ryutsu Center、Tokyo
    • Year and Date
      2006-04-26
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Nano-scale selective area epitaxy of C_60 crystals on GaAs by MBE2005

    • Author(s)
      J. Nishinaga, T. Aihara, T. Toda, F. Matsutani, Y. Horikoshi
    • Organizer
      23rd North American Conference on Molecular Beam Epitaxy(NAMBE2005)
    • Place of Presentation
      Santa Barbara, USA
    • Year and Date
      20050911-14
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] UHV・RFスパッタリング法によるアモルファスGaO薄膜のCuドープ効果2005

    • Author(s)
      奥田 成生、堀越 佳治
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050907-11
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Al-doped C_60薄膜の電気的特性2005

    • Author(s)
      松谷 文雄、堀越 佳治
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050907-11
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] MEE法のおける横方向成長の結晶方位依存性2005

    • Author(s)
      葭葉 一平、堀越 佳治
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050907-11
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] フラックス変調RF-MBE法を用いたガラス基板上へのBeドープP型GaNの成長2005

    • Author(s)
      伊藤 隆行、堀越 佳治
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050907-11
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] RF-MBE法を用いたGaNテンプレート基板上へのBeドープGaNの成長2005

    • Author(s)
      田中 裕介、堀越 佳治
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050907-11
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 低温MEE成長したGaAsにおけるMnとBeの空間分離変調ドーピング2005

    • Author(s)
      小野 満恒二、堀越 佳治
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050907-11
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 局所イオン注入を行ったSi基板への磁性金属めっき膜の選択堆積2005

    • Author(s)
      加賀崎 俊之, 大泊 巌
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 昇温ダイヤモンド表面へのNiイオン照射による局所低抵抗領域の電気特性2005

    • Author(s)
      小出 敬, 品田 賢宏, 大泊 巌
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] イオン照射による半導体表面性状のナノ改質素過程の連続STM観察2005

    • Author(s)
      平田 京、大泊 巌
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 原子状酸素とSiO_2ネットワークとの相互作用2005

    • Author(s)
      丹下 智之、大泊 巌
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] シングルイオン入射のリアルタイム検出2005

    • Author(s)
      小林 高洋、大泊 巌
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] SYNTHESIS OF CARBON NANOTUBE FIELD EMITTERS ON TUNGSTEN TIP2005

    • Author(s)
      Domingo Ferrer, 品田 賢宏、大泊 巌
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] クーロンポテンシャル型電子軌道量子ビットとその読み出しに関する基礎的検討2005

    • Author(s)
      岡本 晋太郎、品田 賢宏、大泊 巌
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Siナノ細線における不純物イオンの挙動評価(2)2005

    • Author(s)
      清家 綾、大泊 巌
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Deal-Groveの式に代わる新しいSi熱酸化速度方程式の提案2005

    • Author(s)
      渡邉 孝信、大泊 巖
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 高温Si(111)表面のAuイオン照射誘起空孔クラスタへのSi(111)5x2-Au形成2005

    • Author(s)
      神岡 武文、大泊 巖
    • Organizer
      秋季第66回応用物理学会学術講演会
    • Place of Presentation
      徳島大学、徳島
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Controllavle and selective magnetic metal plating on locally ion implanted Si2005

    • Author(s)
      T. Kagasaki, N. Shimamoto, Z. Kawazi, T. Homma, T. Osaka, I. Ohdomari
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Real-time STM observation of nano modification dynamics on ion-irradiated semiconductor surface2005

    • Author(s)
      T. Hirata, M. Uchigasaki, T. Kamioka, I. Ohdomari
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Interaction of Atomic Oxygen with SiO2 Network2005

    • Author(s)
      T. Tange, K. Tatsumura, T. Shimura, M. Umeno, I. Ohdomari
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Real-time detection of single ion implantation2005

    • Author(s)
      T. Kobayashi, T. Shinada, S.Okamoto, T Kurosawa, H. Nakayama, I. Ohdomari
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] SYNTHESIS OF CARBON NANOTUBE FIELD EMITTERS ON TUNGSTEN TIP2005

    • Author(s)
      Domigo Ferrer, T. Shinada, I. Matuya,G. F. Zhong, S. Okamoto, T. Tanii, H. Kawarada, I. Ohdomari
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of implanted impurity ions in nano-Si wires(2)2005

    • Author(s)
      S. Okamoto, T. Shinada, I. Ohdomari
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] A new rate equation for thermal oxidation of silicon replacing Deal-Grove's equation2005

    • Author(s)
      T. Watanabe, K. Tatsumura, I. Ohdomarl
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Fromation of Si(III) 5x2=Au in vacancy cluster induced by Au ion irradiation onto high-temperature Si (III) 7x7 surface2005

    • Author(s)
      T. Kamioka, M. Uchigasaki, T. Hirata, I. Ohdomari
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Preparation and analysis of Cu doped amorphous GaO films prepared by magnetron sputtering methods2005

    • Author(s)
      N. Okuda, H. Ishikawa, N. Takcuchi, H. Nakayama, T. Takeuchi, Y. Horikoshi
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Electrical characteristics of Al-doped C_60 layers2005

    • Author(s)
      F. Matsutani, J. Nishinaga, T. Aihara, T. Takada, R. Harada, T. Deguchi, Y. Horikoshi
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Polar diagram of the GaAs growth rate in Migration-Enhanced-Epitaxy2005

    • Author(s)
      I. Yohiba, T. Toda, T. Iwa, T. Uehara, K. Onomitsu, Y. Horikoshi
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Flux modulation RF-MBE growth of Be-doped P-type GaN on glass substrates2005

    • Author(s)
      T. Ito, Y. Tanaka, K. Koretsune, T. Tanimoto, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Growth of Be-doped GaN on GaN template substrates bu RF-MBE2005

    • Author(s)
      Y. Tanaka, T. Ito T. Tanimoto, K. Koretsune, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using LT-MEE2005

    • Author(s)
      K. Onomitsu, H. Fukui, Y. Horiloshi
    • Organizer
      The 66th Autumn meeting of Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      The University of Tokushima
    • Year and Date
      20050900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] MBE法によるC_<60>/GaAs構造のナノスケール選択成長2005

    • Author(s)
      西永 慈郎、堀越 佳治
    • Organizer
      第29回フラーレン・ナノチューブ総合シンポジウム
    • Place of Presentation
      京都大学、京都
    • Year and Date
      20050725-27
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Selective Electro-Deposition of a Magnetic Metal on Partially Ion-Implanted Si Substrate2005

    • Author(s)
      N.Shimamoto, T.Shinada, I.Ohdomari
    • Organizer
      International Conference on the Formation of Semiconductor Interfaces(ICFSI-10)
    • Place of Presentation
      Aix-en-Provence,France
    • Year and Date
      20050700
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] From Semiconductor Technology to Bio-Nanotechnology-Detection of Single Molecule by Means of Nanostructure Array-(Invited Speaker)2005

    • Author(s)
      I.Ohdomari, T.Tanii
    • Organizer
      International Conference on the Formation of Semiconductor Interfaces(ICFSI-10)
    • Place of Presentation
      Aix-en-Provence,France
    • Year and Date
      20050700
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Real-time detection of single-ion impact using on-state semiconductor devices2005

    • Author(s)
      T.Shinada, I.Ohdomari
    • Organizer
      International Conference on the Formation of Semiconductor Interfaces(ICFSI-10)
    • Place of Presentation
      Aix-en-Provence,France
    • Year and Date
      20050700
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Evaluation of dopant diffusion in the confined Si layer under the influence of SiO_2 interfaces2005

    • Author(s)
      A.Seike, Y.Numao, I.Ohdomari
    • Organizer
      International Conference on the Formation of Semiconductor Interfaces(ICFSI-10)
    • Place of Presentation
      Aix-en-Provence,France
    • Year and Date
      20050700
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Selective Electro-Deposition of a Magnetic Metal on Partially Ion-Implanted Si Substrate2005

    • Author(s)
      N. Shimamoto, T. Kagasaki, T. Shinada, J. Kawaji, T. Homma, T. Osaka, I. Ohdomari
    • Organizer
      International Conference on the Formation of Semiconductor Interfaces(ICFSI-10)
    • Place of Presentation
      Aix-en-Provence, France
    • Year and Date
      20050700
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] From Semiconductor Technology to Bio-Nanotechnology-Detection of Single Molecule by Means of Nanostructure Array-2005

    • Author(s)
      I. Ohdomari, T. Tanii
    • Organizer
      International Conference on the Formation of Semiconductor Interfaces(ICFSI-10)
    • Place of Presentation
      Aix-en-Provence, France(Invited Speaker)
    • Year and Date
      20050700
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Real-time detection of single-ion impact using on-state semiconductor devices2005

    • Author(s)
      T. Shinada, T. Kobayashi, S. Okamoto, I. Ohdomari
    • Organizer
      International Conference on the Formation of Semiconductor Interfaces(ICFSI-10)
    • Place of Presentation
      Aix-en-Provence, France
    • Year and Date
      20050700
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evaluation of dopant diffesion in the confined Si layer under the influence of SiO_2 interface2005

    • Author(s)
      A. Seike, Y. Numao, I. Ohdomari
    • Organizer
      International Conference on the Formation of Semiconductor Interfaces(ICFSI-10)
    • Place of Presentation
      Aix-en-Provence, France
    • Year and Date
      20050700
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Development of Liquid Metal Ion Gun/UHV Scanning Tunneling Microscope Combined System(LM-IG/UHV-STM)"2005

    • Author(s)
      T.Kamioka, T.Shinada, I.Ohdomari
    • Organizer
      The Eighth International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN8)
    • Place of Presentation
      Stockholm,Sweden
    • Year and Date
      20050600
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Origin of the Layer-by-Layer Oxidation of Silicon Surface2005

    • Author(s)
      T.Watanabe, I.Ohdomari
    • Organizer
      The Eighth International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN8)
    • Place of Presentation
      Stockholm,Sweden
    • Year and Date
      20050600
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Reactions and Diffusion of Atomic and Molecular Oxygen in the SiO2 Network2005

    • Author(s)
      K.Tatsumura, I.Ohdomari
    • Organizer
      The Eighth International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN8)
    • Place of Presentation
      Stockholm,Sweden
    • Year and Date
      20050600
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Development of Liquid Metal Ion Gun/UHV Scanning Tunneling Microscope Combined System(LM-IG/UHV-STM)2005

    • Author(s)
      T. Kamioka, M. Uchigasaki, E. Nakayama, T. Hirata, T. Shinada, J. Kurosawa, I. Ohdomari, K. Uta
    • Organizer
      The Eighth International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN 8)
    • Place of Presentation
      Stockholm, Sweden
    • Year and Date
      20050600
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Origin of the Layer-by-Layer Oxidation of Silicon Surface2005

    • Author(s)
      T. Watanabe, K. Tatsumura, I. Ohdomarl
    • Organizer
      The Eighth International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN 8)
    • Place of Presentation
      Stockholm, Sweden
    • Year and Date
      20050600
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Reactions and Diffusion of Atomic and Molecular Oxygen in the SiO2 Network2005

    • Author(s)
      K. Tatsumura, T. Shimura, E. Mishima, K. Kawamura, D. Yamasaki, H. Yamamoto, T. Watanabel, M. Umeno, I. Ohdomari
    • Organizer
      The Eighth International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN 8)
    • Place of Presentation
      Stockholm, Sweden
    • Year and Date
      20050600
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] A New Linear-Parabolic Rate Equation for Thermal Oxidation of Silicon2005

    • Author(s)
      T.Watanabe, I.Ohdomari
    • Organizer
      Fourth International Conference on Silicon Epitaxy and Heterostructures(ICSI-4)
    • Place of Presentation
      Awaji,Hyogo
    • Year and Date
      2005-05-23
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] A New Linear-Parabolic Rate Equation for Thermal Oxidation of Silicon2005

    • Author(s)
      T. Watanabe, K. Tatsumura, I. Ohdomarl
    • Organizer
      Fourth International Conference on Silicom Epitaxy and Heterostructures(ICSI-4)
    • Place of Presentation
      Awaji-Yumebutai, Hyogo
    • Year and Date
      2005-05-23
    • Description
      「研究成果報告書概要(欧文)」より
  • [Book] 表面物性工学ハンドブック 第2版2007

    • Author(s)
      大泊 巌(分担執筆)
    • Total Pages
      1050
    • Publisher
      丸善
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] エコマテリアルハンドブック2006

    • Author(s)
      大泊 巌(分担執筆)
    • Total Pages
      816
    • Publisher
      丸善
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 半導体における不鈍物ドーピング2007

    • Inventor(s)
      堀越 佳治, 他4名
    • Industrial Property Rights Holder
      住友電気工業(株)
    • Industrial Property Number
      特願 2007-24659
    • Filing Date
      2007-02-02
    • Description
      「研究成果報告書概要(和文)」より

URL: 

Published: 2010-02-04  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi