2007 Fiscal Year Final Research Report Summary
RESEARCH ON BASIC TECHNOLOGIES FOR THE REALIZATION OF CATE CONTROLLED SPINTRANSISTOR
| Project/Area Number |
17206028
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
YOH Knaji Hokkaido University, RESEARCH CENTER FOR QUANTUM ELECTRONICS, Professor (60220539)
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| Co-Investigator(Kenkyū-buntansha) |
大野 宗一 北海道大学, 大学院・工学研究科, 助教 (30431331)
末岡 和久 北海道大学, 大学院・情報科学研究科, 教授 (60250479)
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| Project Period (FY) |
2005 – 2007
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| Keywords | spin injection / ferromagnet / spin transistor / spin-orbit interaction / Heusler alloy |
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| Research Abstract |
High quality magnetite (Fe_3O_4) was found to be grown on (100) InAs surface. Magnetite film has become a candidate of high efficiency spin injector to be applied to spin transistor. On the other hand, we have also demonstrated gate controlled spin current oscillation due to spin-orbit interaction in Datta-Das type spin transistor structure based on Fe electrode and InAs-based heterostructure transistor at room temperature. In order to justify the observed experimental results of our spin FET characteristics, we have performed Monte Carlo Simulation taking account of Dyakonov - Perel mechanism. In a Datta-Das type spin transistor structure, it was found that vanishing of spin relaxation takes place when two spin orbit interaction, Rashba term and Dresselhaus term, equally contribute in InAs-based spin FET structure. Furthermore, it was found that the gate controlled spin precession takes place and resultant current oscillation should be observed even at room temperature when device operates in non-ballistic regime. Spin amplitude was also found to increase with the increase of lateral electric field (or drain voltage at given source drain distance). These predictions well explain what we have been observing in our Datta-Das type spin transistors. Other remarkable results include estimation of stay field near ferromagnetic electrode by micromagnetics calculation and thermal stability of iron/arsenide interface or thermodynamic calculation of stable compounds of iron and arsenic. Stray field near Fe wire film structure was found to be small except found in compounds such as As_2F (anti-ferro), AsF (anti-ferro), AsF_2 (normal metal) which well explains thermally unstable interface of Fe and InAs and suggests more stable spin injector material such as magnetite or iron silicide are suited for spin injector of spin FET.
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[Presentation] Magnetic and electrical characterization of Fe/InAs(001) interfaces2006
Author(s)
R., Peters・W., Keune・E., Schuster・K., Westerholt・W., Sturhahn T. S. Tellner・J., Zhao・E.E., Alp・S., Kashiwada・M., Ferhat・K., Yoh
Organizer
28th International Conference on thre Physics of Semiconductors
Place of Presentation
Vienna, Austria
Year and Date
20060724-28
Description
「研究成果報告書概要(和文)」より
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[Presentation] Magnetic and electrical characterization of Fe/InAs(001) interfaces2006
Author(s)
R. Peters, W. Keune, E. Schuster, K. Westerholt, W. Sturhahn, T. S. Tellner, J. Zhao, E. E. Alp, S. Kashiwada, M. Ferhat, K. Yoh
Organizer
28^<th> International Conference on the Physics of Semiconductors
Place of Presentation
Vienna, Austria
Year and Date
20060724-20060728
Description
「研究成果報告書概要(欧文)」より
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[Presentation] スピン軌道相互作用に及ぼす歪みチャンネル層の膜厚依存性2006
Author(s)
松田, 喬・Marhoum, Ferhat・Alexandru, Riposan・Joanna M., Millunchick・陽, 完治
Organizer
第51回応用物理学会関係連合講演会
Place of Presentation
武蔵工業大学
Year and Date
20060322-26
Description
「研究成果報告書概要(和文)」より
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[Presentation] Electrical characterization of an Fe/InGaAs spin FET2005
Author(s)
Kanji, Yoh・Marhoun, Ferhat・Saori, Kashiwada・Alexandru, Riposan・Joanna, Mirecki-Millunchick
Organizer
Spintech III(The Third International Schoo1 and Conference on Spintronnics and Quantum information Technology III)
Place of Presentation
Awaji Island, Japan
Year and Date
20050801-05
Description
「研究成果報告書概要(和文)」より
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