半導体量子リングと関連ナノ構造による電子と正孔の新制御法の開発と素子応用の探索

2006 Fiscal Year Annual Research Report

• Project/Area Number: 17206034
• Research Institution: Toyota Technological Institute
• Principal Investigator: 榊 裕之 Toyota Technological Institute, 工学部, 教授 (90013226)
• Co-Investigator(Kenkyū-buntansha): 平川 一彦 東京大学, 生産技術研究所, 教授 (10183097) ; 秋山 英文 東京大学, 物性研究所, 准教授 (40251491)
• Keywords: 量子リング構造 / 半導体ナノ構造 / GaSb / 第2種ヘテロ構造 / 量子閉じ込め / InAs / 量子ドット / 量子ロッド

Research Abstract

本年は、GaSbやAlGaSbやInSbなどアンチモンを含む物質からなる量子リング構造を自己形成的手法で作る研究を系統的に発展させる試みを行った。まず、GaAs基板上では、Sb分子線を照射して表面層にSb原子をsoakingさせた後に、GaSb層を堆積すると、Stranski-Krastanow的手法でGaSb系の量子ドットが形成される。このドットを、数ナノメートルのGaAs層で部分的に覆い、一定時間の熱処理を施すと、外周方向に物質移動が生じ、リング状のGaSb結晶が形成できることを見出した。この形成プロセスを、AlGaSbリングの形成に応用したところ、Alの組成が50%以下では有効であるが、70%以上になると、適用不能となることが判明した。なお、上記のsoaking過程を省略し、GaSbを堆積すると、ドットを経由せずにリング構造となることを既に見出している。
GaAs基板上に、Sb分子を供給せずに、Ga分子のみを堆積させると、Gaの液滴が形成されることが知られている。こうしたGaの微細液滴を形成した後に、低温でSb分子線を供給すると、Gaの液滴の周囲にはSbの粒状結晶が堆積する。その後に基板の温度を上昇し、アニール処理を施すと、Ga液滴とSbが反応し、GaSbの量子ドットが形成されて、強い蛍光を発することが判明した。さらに、Sbの堆積プロセスの際の基板温度を上げると、Ga液滴が周辺方向に拡散するため、GaSb系の量子リング構造ができることも見出した。
上に述べたように、リングの成長手法に関する諸知見を得たが、形成された構造の形状の計測や光学特性の評価なども行い、興味深い知見も得ている。

Research Products

• [Journal Article] Cooling of radiative quantum dot excitons by terahertz radiation: aspin-resolved Monte-Carlo carrier dynamics model (2007)
  • Author(s): F. Boxberg, J. Tulkki, G. Yusa, and H. Sakaki
  • Journal Title: Phys. Rev. B Vol.75,No.11 Pages: 115334-1-9
  • Peer Reviewed
• [Journal Article] "Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads" (2007)
  • Author(s): K. Hamaya, S. Masubuchi, M. Kawamura, T. Machida, M. Jung, K. Shibata, K. Hirakawa, T. Taniyama, S. Ishida, and Y. Arakawa
  • Journal Title: Applied Physics Letters vol.90,No.5 Pages: 053108-1-3
  • Peer Reviewed
• [Journal Article] "Mechanically Controlled Quantum Contact With On-Chip MEMS Actuator" (2007)
  • Author(s): M. Gel, T. Ishida, T. Akasaka, A. Umeno, K. Araki, K. Hirakawa, and H. Fujita
  • Journal Title: Journal of Microelectromechanical Systems vol.16,No.1 Pages: 1-6
  • Peer Reviewed
• [Journal Article] Temperature-dependent current injection and lasing in T-shaped quantum wire-laser diodes with perpendicular p-and n-doping layers (2007)
  • Author(s): M. Okano, S. Liu, T. Ihara, H. Itoh, M. Yoshita, H. Akiyama, L. N. Pfeiffer, K. West, and O. Malis
  • Journal Title: Appl. Phys. Lett. Vol.90, Pages: 091108
  • Peer Reviewed
• [Journal Article] Low-threshold Current-injection Single-mode Lasing in T-shaped GaAs/AlGaAs Quantum Wires (2007)
  • Author(s): S. Liu, M. Yoshita, M. Okano, T. Ihara, H. Itoh, H. Akiyama, L. Pfeiffer, K. West, and K. Baldwin
  • Journal Title: Jpn. J. Appl. Phys. Vol.46 Pages: L330-L332
  • Peer Reviewed
• [Journal Article] Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy (2007)
  • Author(s): Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, W. Ono, F. Nakajima, R. Katayama, and K.Onabe
  • Journal Title: Journal of Crystal Growth Vol.298 Pages: 73-75
  • Peer Reviewed
• [Journal Article] Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys (2007)
  • Author(s): K. Tanioka, Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama and K. Onabe
  • Journal Title: Journal of Crystal Growth Vol.298 Pages: 131-134
  • Peer Reviewed
• [Journal Article] Temperature-dependent conductance of quasi-one-dimensional electrons in a novel constricted In0.1Ga0.9As/GaAs channel with corrugated interfaces (2006)
  • Author(s): Y. Akiyama, T. Kawazu, S. Ishida, Y. Arakawa, H. Sakaki
  • Journal Title: Physica E Vol.32,(1-2) Pages: 337-340
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Anisotropy of the quantum-confined Stark effect in a single InAs quantum dot (2006)
  • Author(s): M. Ohmori, K. torii, and H. Sakaki
  • Journal Title: Physica Status Solidi (c)3 Pages: 512-515
  • Peer Reviewed
• [Journal Article] Possible generation of electric multipole radiation from solid state quantum rings (2006)
  • Author(s): N. Kondo, S. Kobayashi, and H. Sakaki
  • Journal Title: Physica E vol.32 Pages: 49-52
  • Peer Reviewed
• [Journal Article] Redistribution of photogenerated carriers in meutral and charged InAs quantum dot systems (2006)
  • Author(s): K. Torii, M. Ohmori, T. Kawazu, and H. Sakaki
  • Journal Title: Physica E Vol.32 Pages: 175-178
  • Peer Reviewed
• [Journal Article] Landau levels in a novel two dimensional electron system interacting with charged quantum dots (2006)
  • Author(s): T. Kawazu, K. Torii and H. Sakaki
  • Journal Title: Physica E Vol.32 Pages: 226-259
  • Peer Reviewed
• [Journal Article] Magnetophonon resonance of resonant tunneling hot electrons at high magnetic fields (2006)
  • Author(s): T. Strutz, T. Takamasu, H. Sakaki, and N. Miura
  • Journal Title: Phys. Rev. B Vol.74,No.7 Pages: 075208-1-5
  • Peer Reviewed
• [Journal Article] Formation of self-assembled InGaAs quantum dot arrays aligned along quasi-periodic multi-atomic steps on vicinal(111)B GaAs (2006)
  • Author(s): Y. Akiyama and H. Sakaki
  • Journal Title: Appl. Phys. Lett. Vol.89,No.18 Pages: 183108-1-3
  • Peer Reviewed
• [Journal Article] Reduced phonon scattering in an asymmetric triple barrier resonant-tunneling diode at high magnetic fields (2006)
  • Author(s): T. Strutz, T. Takamasu, H. Sakaki, and N. Miura
  • Journal Title: Physical Society of Japan Vol.75,No.11 Pages: 114702
  • Peer Reviewed
• [Journal Article] "Dephasing of Bloch oscillating electrons in GaAs-based superlattices due to interface roughness scattering" (2006)
  • Author(s): T. Unuma, N. Sekine, and K. Hirakawa
  • Journal Title: Applied Physics Letters vol.89,No.16 Pages: 161913-1-3
  • Peer Reviewed
• [Journal Article] "Scattering-assisted terahertz gain in semiconductor superlattices" (2006)
  • Author(s): Yu. A. Tarakanov, M. A. Odnoblyudov, K. A. Chao, N. Sekine, and K. Hirakawa
  • Journal Title: Physical Review B vol.74,No.12 Pages: 125321-1-8
  • Peer Reviewed
• [Journal Article] "Terahertz radiation in superlattices in moderate electric field" (2006)
  • Author(s): P. Han, K. -J. Jin, Y. -L. Zhou, Q. -L. Zhou, and K. Hirakawa
  • Journal Title: International Journal of Modern Physics B vol.20,No.8 Pages: 937-945
  • Peer Reviewed
• [Journal Article] "Electron transport and shell structures of single InAs quantum dots probed by nanogap electrodes" (2006)
  • Author(s): M. Jung, K. Hirakawa, S. Ishida, Y. Arakawa, and S. Komiyama
  • Journal Title: Physica E Vol.32,Issues 1-2 Pages: 187-190
  • Peer Reviewed
• [Journal Article] "Carrier dynamics and dispersive terahertz Bloch gain in semiconductor superlattices (invited)" (2006)
  • Author(s): K. Hirakawa and N. Sekine
  • Journal Title: Physica E Vol.32,Issues 1-2 Pages: 320-324
  • Peer Reviewed
• [Journal Article] "THz imaging of cyclotron emission in quantum Hall conductors" (2006)
  • Author(s): K. Ikushima, H. Sakuma, Y. Yoshimura, S. Komiyama, T. Ueda, and K. Hirakawa
  • Journal Title: Physica E vol. 34 Pages: 22-26
  • Peer Reviewed
• [Journal Article] "半導体超格子のプロッホ振動:非古典的振動子のテラヘルツ利得" (2006)
  • Author(s): 平川一彦、関根徳彦、島田洋蔵
  • Journal Title: 「応用物理」 No.6
  • Peer Reviewed
• [Journal Article] "Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system" (2006)
  • Author(s): K. Hamaya, S. Masubuchi, K. Hirakawa, S. Ishida, Y. Arakawa, K. Sawano, Y. Shiraki, and T. Machida
  • Journal Title: Physical Review B vol.73 Pages: 121304-1-4
  • Peer Reviewed
• [Journal Article] "Photon-counting microscopy of terahertz radiation" (2006)
  • Author(s): K. Ikushima, Y. Yoshimura, T. Hasegawa, S. Komiyama, T. Ueda, and K. Hirakawa
  • Journal Title: Applied Physics Letters vol.88,No.15 Pages: 152110-1-3
  • Peer Reviewed
• [Journal Article] "Electron temperature of hot spots in quantum Hall conductors" (2006)
  • Author(s): S. Komiyama, H. Sakuma, K. Ikushima, and K. Hirakawa
  • Journal Title: Physical Review B vol.73 Pages: 045333-1-5
  • Peer Reviewed
• [Journal Article] "Collective and single-particle intersubband excitations in narrow quantum wells selected by infrared absorption and resonant Raman scattering" (2006)
  • Author(s): T. Unuma, K. Kobayashi, A. Yamamoto, M. Yoshita, K. Hirakawa, Y. Hashimoto, S. Katsumoto, Y. Iye, Y. Kanemitsu, and H. Akiyama
  • Journal Title: Physical Review B vol.74,No.19 Pages: 195306-1-5
  • Peer Reviewed
• [Journal Article] "Lateral conduction quantum dot infrared photodetectors using photoionization of holes in InAs quantum dots" (2006)
  • Author(s): S.-W. Lee and K. Hirakawa
  • Journal Title: Nanotechnology vol.17,No.15 Pages: 3866-3868
  • Peer Reviewed
• [Journal Article] "A sensitive double quantum well infrared phototransistor" (2006)
  • Author(s): Z. An, T. Ueda, J.-C. Chen, S. Komiyama, and K. Hirakawa
  • Journal Title: Journal of Applied Physics vol.100 Pages: 044509
  • Peer Reviewed
• [Journal Article] "Metastable excited states of a closed quantum dot probed by an aluminumsingle-electron transistor" (2006)
  • Author(s): J.-C. Chen, Z. An, T. Ueda, S. Komiyama, K. Hirakawa, and V. Antonov
  • Journal Title: Physical Review B vol.74 Pages: 045321
  • Peer Reviewed
• [Journal Article] "Spectral measurement of weak THz waves with quantum Hall detectors" (2006)
  • Author(s): H. Sakuma, K. Ikushima, S. Komiyama, and K. Hirakawa
  • Journal Title: Infrared Physics and Technology vol.48,No.3 Pages: 235-239
  • Peer Reviewed
• [Journal Article] "Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads" (2006)
  • Author(s): K. Hamaya, S. Masubuchi, M. Kawamura, T. Machida, M. Jung, K. Shibata, K. Hirakawa, T. Taniyama, S. Ishida, and Y. Arakawa
  • Journal Title: Applied Physics Letters, vol.90,No.5 Pages: 053108-1-3
  • Peer Reviewed
• [Journal Article] Collective and single-particle intersubband excitations in narrow quantum wells selected by infrared absorption and resonant Raman scattering (2006)
  • Author(s): T. Unuma, K. Kobayashi, A. Yamamoto, M. Yoshita, K. Hirakawa, Y. Hashimoto, S. Katsumoto, Y. Iye, Y. Kanemitsu, and H. Akiyama
  • Journal Title: Phys. Rev. B vol.74 Pages: 195306
  • Peer Reviewed
• [Journal Article] Exciton-plasma crossover with electron-hole density in T-shaped quantum wires studied by means of the photoluminescence spectrograph method (2006)
  • Author(s): M. Yoshita, Y. Hayamizu, H. Akiyama, L.N. Pfeiffer, K.W.West
  • Journal Title: Phys. Rev. B Vol.74 Pages: 165332
  • Peer Reviewed
• [Journal Article] Light-emitting diodes fabricated from biomolecular compounds (2006)
  • Author(s): H. Tajima, K. Shimatani, T. Komino, S. Ikeda, M. Matsuda, Y. Ando, H. Akiyama
  • Journal Title: Colloids and Surfaces A-Physicochemical and Engineering Aspects Vol.284 Pages: 61-65
  • Peer Reviewed
• [Journal Article] A voltage-induced transition of hemin in BIODE (biomolecular light-emitting diode) (2006)
  • Author(s): H.Tajima, K. Shimatani, T. Komino, M. Matsuda, S. Ikeda, Y. Ando, H. Akiyama
  • Journal Title: Bulletin of the Chemical Society of Japan Vol.79, No.4 Pages: 549-554
  • Peer Reviewed
• [Journal Article] Growth of GaNAs/GaAs Multiple Quantum Well by Molecular Bear Epitaxy Using Modulated N Radical Beam Source (2006)
  • Author(s): K. Takao, K. Fujii, H. Miyagawa, M. Mizumaki, O. Sakata, N. Tsurumachi, H. Itoh, N. Sumida, S. Nakanishi, H. Akiyama and S. Koshiba
  • Journal Title: Jpn. J. Appl. Phys Vol.45, No.4B Pages: 3540-3543
  • Peer Reviewed
• [Journal Article] Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys (2006)
  • Author(s): H. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, N. Usami, D. Aoki, K. Onabe
  • Journal Title: Phys. Stat. Sol. (c)3 Pages: 1907-1910
  • Peer Reviewed
• [Presentation] Scattering of two-dimensional electrons by self-assembled InAIAs anti-dots in novel n-AlGaAs/GaAs heterojunctions (2007)
  • Author(s): T. Kawazu and H. Sakaki
  • Organizer: The Second International Symposium on Nanometer-scale Quantum Physics (nanoPHYS'07)
  • Place of Presentation: Tokyo Institute of Technology, Japan
  • Year and Date: 2007-01-24
• [Presentation] g-factor of two dimensional electrons in n-AlGaAs/GaAs selectively doped heterojunctions with embedded InGaAs qsuantum dots (2006)
  • Author(s): T. Kawazu,H. Sakaki
  • Organizer: The 14th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20060900
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Formation mechanism of asymmetry in self-assembled GaSb/GaAs Type-II quantum dots (2006)
  • Author(s): C. Jiang, T. Kawazu, S. Kobayashi,H. Sakaki
  • Organizer: The 14th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20060900
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures (2006)
  • Author(s): K. Shibata, M. Jung, K. Hirakawa, T. Machida, H. Sakaki
  • Organizer: The 14th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20060900
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111) B GaAs surface (2006)
  • Author(s): Y. Akiyama and H. Sakaki
  • Organizer: The 14th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20060900
• [Presentation] Electron-hole separation of zero-dimensional excitons in a single self-organized InAs quantum dot studied under normal and In-plane electric fields (2006)
  • Author(s): M. Ohmori, K. Torii, H. Sakaki
  • Organizer: The 28th International Conference on Physics of Semiconductors
  • Place of Presentation: Vienna, Austria
  • Year and Date: 20060700
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Observation of photoluminescence of semiconductor nano crystal quantumdots in the core of photonic bandgap fiber (2006)
  • Author(s): S. Kawanishi, M. Ohmori, M. Tanaka, and H. Sakak
  • Organizer: the 19th IEEE Annual Lasers and Electro Optics Society (LEOS) Meeting
  • Place of Presentation: Montreal, Canada
  • Year and Date: 2006-11-29
• [Presentation] From superlattices to quantum dots: Progress of semiconductor nanostructures and their device applications (2006)
  • Author(s): H. Sakaki.
  • Organizer: The IEEE Nanotechnology Materials and Devices Conference
  • Place of Presentation: Gyeongju, Korea
  • Year and Date: 2006-10-22
• [Presentation] Recent advances and future challenges in nanostructure materials and devices (2006)
  • Author(s): H. Sakaki
  • Organizer: Korea Advanced Nano Fab Center International Symposium on Advanced Nanodevices Technology
  • Place of Presentation: Suwon, Korea
  • Year and Date: 2006-04-27
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] ふしぎナゾ最前線!現代科学の限界にいどむ「ナノテクがみちびく科学の未来」, 榊裕之(監修) (2007)
  • Author(s): 榊 裕之
  • Total Pages: 47頁
  • Publisher: 旺文社
• [Book] 「学技術立国日本を築く-極限に挑む気鋭の研究者たち-」(財)丸文研究交流財団選考委員会(編), 榊 裕之(監修) (2006)
  • Author(s): 榊 裕之
  • Total Pages: 323
  • Publisher: 日刊工業新聞社
  • Description: 「研究成果報告書概要(和文)」より
• [Book] 「科学立国日本を築く 極限に挑む気鋭の研究者たち(分担執筆)」"半導体量子構造が拓くテラヘルツデバイスの可能性" (2006)
  • Author(s): 平川一彦
  • Publisher: 丸文研究交流財団刊
• [Book] 「電子材料ハンドブック(分担執筆)」"量子効果デバイス"(3.3.7節) (2006)
  • Author(s): 平川一彦
  • Total Pages: 9
  • Publisher: 朝倉書店
• [Book] 「電子材料ハンドブック(分担執筆)」"固体接合と量子構造"(1.5章) (2006)
  • Author(s): 平川一彦
  • Total Pages: 12
  • Publisher: 朝倉書店
• [Book] 「表面物性工学ハンドブック(分担執筆)」"半導体超薄膜ヘテロ構造・超格子の伝導"(11.3.1節) (2006)
  • Author(s): 平川一彦
  • Publisher: 丸善
• [Book] 「ナノフォトニクス(分担執筆)」"量子ドット光検出器" (2006)
  • Author(s): 平川一彦
  • Publisher: コロナ社
• [Book] エレクトロニクス材料・技術シリーズ「高周波半導体材料・デバイスの新展開」"テラヘルツ波半導体デバイス" (2006)
  • Author(s): 平川一彦
  • Total Pages: 16
  • Publisher: シーエムシー出版
• [Book] どのように発光は計測されるか(分担執筆)バイオ・ケミルミネッセンスハンドブック 第3章2節, p.114-127 (2006)
  • Author(s): 秋山英文(今井洋一,近江谷克裕編)
  • Publisher: 丸善
• [Book] 量子ナノ細線の光物性とレーザ応用(分担執筆)科学立国日本を築く-極限に挑む気鋭の研究者たち, 榊裕之監修 p.143-149 (2006)
  • Author(s): 秋山英文
  • Publisher: 日刊工業新聞社
• [Patent(Industrial Property Rights)] 「量子カスケードレーザー (2006)
  • Inventor(s): 関根徳彦、平川一彦
  • Industrial Property Rights Holder: (独)情報通信研究機構
  • Industrial Property Number: 特願2006-181502
  • Filing Date: 2006-06-30