半導体量子リングと関連ナノ構造による電子と正孔の新制御法の開発と素子応用の探索

2007 Fiscal Year Annual Research Report

• Project/Area Number: 17206034
• Research Institution: Toyota Technological Institute
• Principal Investigator: 榊 裕之 Toyota Technological Institute, 工学部, 教授 (90013226)
• Co-Investigator(Kenkyū-buntansha): 平川 一彦 東京大学, 生産技術研究所, 教授 (10183097) ; 秋山 英文 東京大学, 物性研究所, 准教授 (40251491)
• Keywords: 量子リング構造 / 半導体ナノ構造 / GaSb / 第2種ヘテロ構造 / 量子閉じ込め / InAs / 量子ドット / 量子ロッド

Research Abstract

本年度は、1.量子リングやドット構造の自己形成手法の高度化、2.それらが関与する特異な電子伝導と光検出機能および3.光学特性について研究を進め、以下の成果を得た。
これまで、格子定数の異なる基板上のStranski-Krastanov(SK)型成長で10nm級のドットが自己形成する過程を利用し、これに一工夫を加えてリング構造を作成してきたが、本年は別の液滴エピタキシー手法を検討し、成長過程の設定次第で、良質なGaSbやInSbのドットに加え、リング構造が形成できることを見出した。
また、GaSbの量子ドットを伝導路の近傍に埋めこんだp型ヘテロFET素子を開発、ゲート電圧の印加で正孔を蓄積させて閾値の制御可能性を示すとともに、光照射でも正孔が蓄積されるため、近赤外光を検出できることも明らかにした。また、単一のSKドットに微細電極を設けた素子では、電極材料に依ってスピンが関与する特異な電子伝導の生じることも示した(平川チーム)。
さらに、ドットやリング内の励起子の量子状態や光学特性を理論解析し、束縛エネルギーや波動関数の形状を明らかにするとともに、各種のドットやリングを埋めこんだ構造の蛍光特性を実験的に調べ、その特徴を示すとともに、多重極放射素子への応用可能性を検討した。また、量子リング内の電子や正孔は、その形状により、量子細線に近い量子状態を作る。そこで、量子細線内に1次元的な励起子や電子・正孔を導入した時の光学特性を、理論実験の両面から調べ、一連のユニークな特徴が現れることを示した(秋山チーム)。

Research Products

• [Journal Article] Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions (2008)
  • Author(s): M. Lachab, H. Sakaki
  • Journal Title: Applied Surface Science Vol.254,(11) Pages: 3385-3390
  • Peer Reviewed
• [Journal Article] g-factor of two dimensional electrons in n-AIGaAs/GaAs selectively doped heterojunctions with embedded InGaAs quantum dots (2007)
  • Author(s): T. Kawazu and H. Sakaki
  • Journal Title: J, Crystal Growth Vol.301-302 Pages: 910-913
  • Peer Reviewed
• [Journal Article] MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal(111)B GaAs surface (2007)
  • Author(s): Y. Akiyama and H. Sakaki
  • Journal Title: J. Crystal Growth Vol.301-302 Pages: 697-700
  • Peer Reviewed
• [Journal Article] Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dots (2007)
  • Author(s): C. Jiang, T. Kawazu, S. Kobayashi and H. Sakaki
  • Journal Title: J. Crystal Growth Vol.301-302 Pages: 828-832
  • Peer Reviewed
• [Journal Article] Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures (2007)
  • Author(s): K. Shibata, M. Jung, K. Hirakawa, T. Machida, S. Ishida, Y. Arakawa and H. Sakaki
  • Journal Title: J. Crystal Growth Vol.301-302 Pages: 731-734
  • Peer Reviewed
• [Journal Article] Scattering of two-dimensional electrons by self-assembled InAlAs anti-dots in novel n-AlGaAs/GaAs heterojunctions (2007)
  • Author(s): T. Kawazu and H. Sakaki,
  • Journal Title: Physica E Vol.40,(2) Pages: 233-236
  • Peer Reviewed
• [Journal Article] Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes (2007)
  • Author(s): K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, K. Hirakawa, T. Machida, T. Taniyama, S. Ishida, and Y. Arakawa,
  • Journal Title: Applied Physics Letters Vol.91 Pages: 232105
  • Peer Reviewed
• [Journal Article] Kondo universal scaling for a quantum dot coupled to superconducting leads (2007)
  • Author(s): C. Buizert, A. Oiwa, K. Shibata, K. Hirakawa, and S. Tarucha
  • Journal Title: Physical Review Letters Vol.99 Pages: 136806
  • Peer Reviewed
• [Journal Article] Metastable excited states of a closed quantum dot with high sensitivity to infrared photons" (2007)
  • Author(s): Zhenghua An, T. Ueda, S. Komiyama, and K. Hirakawa
  • Journal Title: Physical Review B Vol.75 Pages: 085417-1-7
  • Peer Reviewed
• [Journal Article] Spin-half Kondo effect in a single self-assembled InAs quantum dot with and without an applied magnetic field (2007)
  • Author(s): Y. Igarashi, M. Jung, M. Yamamoto, A. Oiwa, T. Machida, K. Hirakawa, and S. Tarucha
  • Journal Title: Physical Review B Vol.76 Pages: 081303-1-4
  • Peer Reviewed
• [Journal Article] Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes (2007)
  • Author(s): K. Shibata, C. Buizert, A. Oiwa, K. Hirakawa, and S. Tarucha
  • Journal Title: Applied Physics Letters Vol.91,(11) Pages: 112102-1-3
  • Peer Reviewed
• [Journal Article] Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve (2007)
  • Author(s): K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, K. Hirakawa, and T. Machida
  • Journal Title: Applied Physics Letters Vol.91,(2) Pages: 022107-1-3
  • Peer Reviewed
• [Journal Article] Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads (2007)
  • Author(s): K. Hamaya, S. Masubuchi, M. Kawamura, T. Machida, M. Jung, K. Shibata, K. Hirakawa, T. Taniyama, S. Ishida, and Y. Arakawa
  • Journal Title: Applied Physics Letters Vol.90,(5) Pages: 053108-1-3
  • Peer Reviewed
• [Journal Article] Coulomb Enhancement and Suppression of Peak Gain in Quantum Wire Lasers (2007)
  • Author(s): Ping Huai, Hidefumi Akiyama, Yuh Tomio, and Tetsuo Ogawa
  • Journal Title: Jpn. J. Appl. Phys. Vol.46 Pages: L1071-L1073
  • Peer Reviewed
• [Journal Article] Micro-photoluminescence characterization of GaInAsP/InP single quantum wires fabricated by dry etching and regrowth (2007)
  • Author(s): Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Dhanorm Plumwongrot, Takeo Maruyama, and Shigehisa Arai
  • Journal Title: J. Appl. Phys. Vol 102 Pages: 093509
  • Peer Reviewed
• [Journal Article] Biexciton gain and the Mott transition in GaAs quantum wires (2007)
  • Author(s): Yuhei Hayamizu, Masahiro Yoshita, Yasushi Takahashi, Hidefumi Akiyama, C. Z. Ning, Loren N. Pfeiffer, and Ken W. West
  • Journal Title: Phys. Rev. Lett. Vol.99 Pages: 167403
  • Peer Reviewed
• [Journal Article] One-dimensional band-edge absorption in a doped quantum wire (2007)
  • Author(s): Toshiyuki Ihara, Yuhei Hayamizu, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West
  • Journal Title: Phys. Rev. Lett. Vol.99 Pages: 126803
  • Peer Reviewed
• [Journal Article] Surface-morphology evolution during growth-interrupt in situ annealing on GaAs(110)epitaxial layers (2007)
  • Author(s): Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West
  • Journal Title: J. Appl. Phys. Vol.101 Pages: 103541
  • Peer Reviewed
• [Presentation] Photoluminescence spectroscopy of semiconductor colloidal quantum dots in the photonic bandgap fiber (2008)
  • Author(s): M. Ohmori, S. Kawanishi, M. Tanaka, H. Sakaki
  • Organizer: IEEE LEOS Winter Topicals Conf. 2008
  • Place of Presentation: Sorrento, Italy
  • Year and Date: 2008-01-14
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Roles of quantum nanostructures in the evolution and future advances of electronic and photonic devices(Plenary); (2007)
  • Author(s): H. Sakaki
  • Organizer: 2007 Int'l. Electron Devices Meeting(IEDM)
  • Place of Presentation: Washington DC, U. S. A.
  • Year and Date: 2007-12-10
• [Presentation] Temperature dependence of charged exciton in ultra-low density InAs quantum dots (2007)
  • Author(s): M. Ohmori, K. Torii, H. Sakaki
  • Organizer: The 34th Int'l Symp. on Compound Semiconductors(ISCS)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2007-10-15
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Magneto-capacitance study of an n-AlGaAs/GaAs hetero-junction supporting a sizable dc current (2007)
  • Author(s): T. Kawazu and H. Sakaki
  • Organizer: The 34th Int'l Symp. on Compound Semiconductors(ISCS)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2007-10-15
• [Presentation] Resonant tunneling of electrons through single self-assembled InAs quantum dot at room temperature studied with conductive AFM tip. (2007)
  • Author(s): I. TANAKA, Y. Tada, S. Nakatani, K. Uno, M. Azuma, K. Umemura, I. Kamiya, and H. Sakaki
  • Organizer: The 34th Int'l Symp. on Compound Semiconductors(ISCS)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2007-10-15
• [Presentation] Magneto-capacitance measurement of a selectively doped n-AlGaAs/GaAs heterojunction with InGaAs quantum dots (2007)
  • Author(s): T. Kawazu and H. Sakaki
  • Organizer: 2007 Int'l Conf. on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2007-09-19
• [Presentation] Advances in quantum nanostructure devices and roles of heterostructure control technology(Plenary) (2007)
  • Author(s): H. Sakaki
  • Organizer: 7th Topical Workshop on Heterostructure Microelectronics(TWHM 2007)
  • Place of Presentation: Chiba, Japan
  • Year and Date: 2007-08-22
• [Presentation] Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on(311)A GaAs substrates (2007)
  • Author(s): T. Noda, H. Sakaki
  • Organizer: The 13th Int'1 Conf. on Modulated Semiconductor Structures(MSS)
  • Place of Presentation: Genova Italy
  • Year and Date: 2007-07-15
• [Presentation] Prospects of quantum dot and quantum wire based devices and roles of molecular beam epitaxy(Invited) (2007)
  • Author(s): H. Sakaki
  • Organizer: MBE-Taiwan 2007
  • Place of Presentation: 高雄,台湾
  • Year and Date: 2007-05-21