2007 Fiscal Year Final Research Report Summary
ZnO-based semiconductor nanostructures for optical quantum devices
| Project/Area Number |
17310070
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Shizuoka University |
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Principal Investigator |
TEMMYO Jiro Shizuoka University, Research Institute of Electronics, Professor (90334961)
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| Co-Investigator(Kenkyū-buntansha) |
TANAKA Akira Shizuoka University, Research Institute of Electronics, Associate Professor (50022265)
AOKI Toru Shizuoka University, Research Institute of Electronics, Associate Professor (10283350)
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| Project Period (FY) |
2005 – 2007
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| Keywords | Zinoxide / Optical device / MOCVD / Quantum effect / Radical |
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| Research Abstract |
ZnO has some features such as a bandgap energy of 3.28 eV and an exciton binding energy of 60 meV as an important criterion for optical device applications. ZnO-based material system is expected for nexrgeneration optical semiconductor materials. However, we had some problems on epitaxial films quality, difficulties of bandgap engineering and p-type doping. In order to overcome these problems, we have deveopled remote-plasma-enhanced metalorganic chemical deposition system (RPE-MOCVD) for ZnO-based systems and succeeded in growth of ZnO(Mg, Cd) O alloy systems having bandgaps fron 3.7 ev down to 1.9 eV. We have done ZnO based double heterojunctions growth on p-4H-SiC substates and achieved RGB electroluminescence emissions via current injection. ZnO nanodots on Si substate abailable have revealed a blue-shift due to the quantum mechanical effect.
We have opend the research field oxide semiconductor nano-photonics. based on ZnO-based material systems.
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