2007 Fiscal Year Final Research Report Summary
Fabrication of porous oxide films with three dimensional ordered periodicity on semiconductors and metals bawd on colloidal crystal templating and its applications
| Project/Area Number |
17310077
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Kogakuin University |
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Principal Investigator |
ONO Sachiko Kogakuin University, Dept of Appl. Chem., Professor (90052886)
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| Co-Investigator(Kenkyū-buntansha) |
ASOH Hidetaka Kogakuin University, 工学部, Lecturer (80338277)
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| Project Period (FY) |
2005 – 2007
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| Keywords | Micro- / nano-devices / Nanomaterials / Advanced functional-devices / Colloidal crystals / Self-organization / Material processing |
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| Research Abstract |
Nanopatterning processes based on a localized anodization of Si and the subsequent chemical etching of SiO2 were developed to fabricate a dot array and a hole array on a Si surface using self-organized anodic porous alumina as a mask. We have also fabricated micro/nano structured Si surfaces by a combination of colloidal crystal templating, hydrophobic treatment and subsequent metal-assisted chemical etching. The proposed patterning processes of the Si surface have potential technological applications in fields that need textured surfaces of controlled nanoscale periodicity and morphology owing to their relative simplicity and low cost. In addition, the electrochemical etching of aluminum foils using a honeycomb oxide mask was studied to directly control the initiation sites of pits independent of the surface activation state of the substrate. The transfer of the hexagonally ordered pattern of self-assembled colloidal spheres to the oxide film could be achieved by the localized anodization in neutral electrolyte. That is, etch pits were generated only in the intersp aces of honeycomb oxide mask formed on the aluminum surface. Based on this process, the dispersibility of the initiation sites of pits was improved clearly in comparison with that for the conventional method.
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Research Products
(199 results)
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[Journal Article] Fabrication of Porous Niobia by Anodizing of Niobium2006
Author(s)
S., Ono, T., Nagasaka, H., Shimazaki, H., Asoh
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Journal Title
in Pits and Pores Formation, Properties, and Significance for Advanced Materials/2004(P. Schmuki, D. J. Lockwood, Y. H. Ogata, M. Seo, H. S. Isaacs, Editors)The Electrochemical Society Proceedings Series, Pennington, NJ 2004-19
Pages: 123-133
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Fabrication of Inverse Opal Structure of Silica by Si Anodization2006
Author(s)
H., Asoh, S., Ono
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Journal Title
in Pits and Pores III : Formation, Properties, and Significance for Advanced Materials/2004(P.Schmuki, D. J. Lockwood, Y. H. Ogata, M. Seo, H. S. Isaacs, Editors)The Electrochemical Society Proceedings Series, Pennington, NJ 2004-19
Pages: 2004-19
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Self-Ordering of Anodic Porous Alumina Induced by High Electric Field Strength2006
Author(s)
S., Ono, N., Kato, M., Saito, H., Asoh
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Journal Title
in Pits and Pores III : Formation, Properties, and Significance for Advanced Materials/2004(P. Schmuki, D. J. Lockwood, Y. H. Ogata, M. Seo, H. S. Isaacs, Editors)The Electrochemical Society Proceedings Series, Pennington, NJ 2004-19
Pages: 34-42
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Natural Lithography of Silicon Substrate Using Self-ordered Anodic Alumina and Nanospheres2005
Author(s)
S., Ono, H., Asoh
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Journal Title
in State-of-the-Art Program on Compound Semiconductors XLII -and- Processes at the Compound- Semiconductor/Solution Interface/2005(P. C. Chang, K. Shiojima, R. E. Kopf, X. Chen, D. Noel Buckley, A. Etcheberry, and B. Marsan, Editors)The Electrochemical So 2005-04
Pages: 177-187
Description
「研究成果報告書概要(欧文)」より
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