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2007 Fiscal Year Final Research Report Summary

Research and development of semiconductor lasers for optical communication with temperature stability

Research Project

Project/Area Number 17360004
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionUniversity of Tsukuba

Principal Investigator

AKIMOTO Katsuhiro  University of Tsukuba, Graduate school of Pure and Applied Sciences, Professor (90251040)

Co-Investigator(Kenkyū-buntansha) SAKURAI Takeaki  University of Tsukuba, Graduate school of Pure and Applied Sciences, Assistant Professor (00344870)
Project Period (FY) 2005 – 2007
KeywordsCrystal Engineering / Optical Pronerties / Enerey Transfer / Rare Earth / LED
Research Abstract

GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Er and Eu seems to be interesting, since Er yields IR luminescence at 1.5 μm which is used as optical communication and Eu yields red luminescence at 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers.
The Eu or Er-doped GaN thin films were grown on sapphire (0001) substrates by gas-source molecular beam epitaxy (GSMBE) using uncracked NH3 gas with 6N purity as the nitrogen source.
We have found single crystalline growth of Eu-doped GaN and nearly temperature independent luminescence at 622 nm originating from the intra-4f-4f transition of the Eu3+ ions. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the host GaN, and the … More external emission efficiency was estimated to be about 0.18 at room temperature when the Eu concentration was about 2 at. %. Extended x-ray absorption fine structure analysis has revealed that most Eu ions are located in substitutional Ga lattice sites with C_<3v> or lower symmetry. Three kinds of Eu incorporation sites have been shown to exist in Eu-doped GaN by studying photoluminescence, photoluminescence excitation, and two of them are excited by charge transfer and the other is excited through GaN host excitation. Therefore, site control is very important for the device fabrication. These results revealed that Eu-doped GaN could be a potential material for an active layer.
Similar results were also obtained for Er in GaN, that is, the luminescence intensity of Er is related with vacancy complex and Er is mainly incorporated into Ga site. However, there are multiple sites for Er in GaN and the interstitial Er may play an important role in luminescence emission through the GaN host excitation. The control of the incorporation site of Er is important as well as Eu to fabricate devices which is operated by carrier injection. These obtained results enable to realize LED and laser diodes. Less

  • Research Products

    (37 results)

All 2008 2007 2006 2005 Other

All Journal Article (15 results) Presentation (19 results) Book (2 results) Remarks (1 results)

  • [Journal Article] Photoluminescence spectra of Eu-doped GaN2008

    • Author(s)
      J. Sawahata, J. W. Seo, S. Chen, and K. Akimoto
    • Journal Title

      phys. stat. sol.(a) 205

      Pages: 71-74

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Site-dependent Eu3+ luminescence in GaN : Eu3+epitaxial films studied by microscopic photoluminescence spectroscopy2008

    • Author(s)
      A. Ishizumi, J. Sawahata, K. Akimoto, and Y. Kanemitsu
    • Journal Title

      Materials Sci. Eng. B 146

      Pages: 186-188

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam2008

    • Author(s)
      A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo, and S. Ishibashi
    • Journal Title

      J. Appl. Phys 103

      Pages: 104505-1-104505-5

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Physics and application of light emission and detection2008

    • Author(s)
      K. Akimoto, et. al.
    • Journal Title

      Chapter(Rare earth doped semiconductor and devices) 6. 3

      Pages: 217-227

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy2007

    • Author(s)
      J. Sawahata, J. Seo, M. Taiguchi, D. Saito, S. Nemoto, and K. Akimoto
    • Journal Title

      J. Crystal Growth 301/302

      Pages: 420-423

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] The optical ecitation mechanism in ZnS : Sm3+grown by molecular-beam epitaxy2007

    • Author(s)
      M. Tanaka, A. Kurita, H. Yamada, and K. Akimoto
    • Journal Title

      Solid State Commun 142

      Pages: 36-40

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] TEM observation of Eu-doped GaN and fabrication of n-GaN/Eu : GaN/p-GaN structure2006

    • Author(s)
      J. Sawahata, H. Bang, J. W. Seo, T. Tsukamoto, and K. Akimoto
    • Journal Title

      Optical Materials 28

      Pages: 759-762

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effect of V/III ratio on the optical properties of Eu-doped GaN2006

    • Author(s)
      J. Sawahata, J. W. Seo, M. Takiguchi, D. Saito, S. Nemoto, and K. Akimoto
    • Journal Title

      phys. stat. sol.(c) 3

      Pages: 1911-1914

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Photoluminescence spectra of Eu-doped GaN with various Eu concentrations2006

    • Author(s)
      J. Sawahata, J. W. Seo, S. Chen, M. Takiguchi, D. Saito, S. Nemoto, and K. Akimoto
    • Journal Title

      Appl. Phys. Lett 89

      Pages: 192104

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Origin of efficient luminescence from GaN : Eu3+epitaxial films revealed by microscopic photoluminescence imaging spectroscopy2006

    • Author(s)
      A. Ishizumi, J. Sawahata, K. Akimoto, and Y. Kanemitsu
    • Journal Title

      Appl. Phys. Lett 89

      Pages: 191908

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Wide gap semiconductors2006

    • Author(s)
      K. Akimoto, et. al.
    • Journal Title

      Chapter(ZnSe based laser diodes) and(ZnSe and related materials) 3. 6 5. 2

      Pages: 226-240 387-398

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Influence of lattice-matching on structural properties of GaInNAs epitaxial films grown on GaAs2005

    • Author(s)
      T. Sakurai, N. Matsumoto, Y. Okada, S. Onari, and K. Akimoto
    • Journal Title

      phys. stat. sol.(c) 2

      Pages: 2224-2227

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Structural and magnetic properties of Co doped GaN2005

    • Author(s)
      J. Sawahata, H. Bang, M. Takiguhchi, J. Seo, H. yanagihara, E. Kita, and K. Akimoto
    • Journal Title

      phys. stat. sol.(c) 2

      Pages: 2458-2462

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Structural and optical properties of Eu-and Tb-doped GaN2005

    • Author(s)
      J. Sawahata, H. Bang, J. Seo, M. Takiguchi, and K. Akimoto
    • Journal Title

      J. Ceramics Processing Research 6

      Pages: 184-187

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Optical processes of red emission from Eu doped GaN2005

    • Author(s)
      J. Sawahata, H. Bang, J. Seo, and K. Akimoto
    • Journal Title

      Science and Technology of Advanced Materials 6

      Pages: 644-648

    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Structural and Optical Properties of Er doped GaN with various Er concentrations2007

    • Author(s)
      S. Chen, J. Seo, J. Sawahata, K. Akimoto
    • Organizer
      The 34th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kyoto, Japan(2007)
    • Year and Date
      2007-10-17
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] AlGaN/GaN-HFET with AlOx Gate Insulator Formed by MOCVD2007

    • Author(s)
      H. Sazawa, N. Nishikawa, Y. Honda, M. Hata, M. Shimizu, H. Okumura, T. Sakurai, K. Akimoto
    • Organizer
      7th International Conference of Nitride Semiconductors
    • Place of Presentation
      Las Vegas, USA(2007)
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Structural Defects in Eu doped GaN Observaion by transmission Electron Microcopy2007

    • Author(s)
      J. Seo, J. Sawahata, M. mitome, K. Akimoto
    • Organizer
      7th International Conference on Nitride Semiconductors(ICNS-7)
    • Place of Presentation
      Las Vegas, USA(2007)
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Transmission electron microscope observation of rare earth(RE) doped GaN2007

    • Author(s)
      J. Seo, J. Sawahata, M. Mitome, K. Akimoto
    • Organizer
      The 3rd Asia Pacific Workshop on Wide Gap Semiconductor
    • Place of Presentation
      Jeonju, Korea
    • Year and Date
      2007-03-12
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Transmission microscope observation of rare earth doped GaN2006

    • Author(s)
      J. Seo, J. Sawahata, M. Mitome, K. Akimot
    • Organizer
      International Workshop on Nitride Semiconductors 2006
    • Place of Presentation
      Kyoto, Japan(2006)
    • Year and Date
      2006-10-26
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Microscope photoluminescence spectroscopy of Eu^<3+>-doped GaN epitaxial films2006

    • Author(s)
      A. Ishizumi, J. Sawahata, K. Akimoto, Y. Kanemitsu
    • Organizer
      International Workshop on Nitride Semiconductors 2006
    • Place of Presentation
      Kyoto, Japan(2006)
    • Year and Date
      2006-10-24
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Spectral shape variation of Photoluminescence in Eu-doped GaN with Eu concentration2006

    • Author(s)
      J. Sawahata, J. Seo, K. Akimoto
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Kyoto, Japan(2006)
    • Year and Date
      2006-10-24
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Growth mechanism of GaN in ammonia-source molecular beam epitaxy2006

    • Author(s)
      S. Morishima, K. Akimoto
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Kyoto, Japan(2006)
    • Year and Date
      2006-10-24
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Photoluminescence spectra of Eu-doped GaN with various Eu concentration2006

    • Author(s)
      J. Sawahata, J. W. Seo, S. Chen, and K. Akimoto
    • Organizer
      The 2nd Workshop on Impurity based Electroluminescent Devices and Materials
    • Place of Presentation
      Wakayama, Japan
    • Year and Date
      2006-10-16
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Photoluminescence spectra of Eu-doped GaN grown under various V/III ratio by molecular beam epitaxy2006

    • Author(s)
      J. Sawahata, J. Seo, M. Takiguchi, D. Saito, S. Nemoto, and K. Akimoto
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      2006-09-14
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] TEM observation of Eu doped GaN-Concentration dependence2006

    • Author(s)
      J. Seo, J. Sawahata, K. Akimoto
    • Organizer
      The 67th Autumn Meeting, the Japan Society of Applied Physics
    • Place of Presentation
      Kyoto, Japan(2006)
    • Year and Date
      2006-08-31
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] V/III ratio dependence of Eu doped GaN on photoluminescence2006

    • Author(s)
      J. Sawahata, J. Seo, S. Chen, D. Saito, K. Akimoto
    • Organizer
      The 67th Autumn Meeting, the Japan Society of Applied Physics
    • Place of Presentation
      Kyoto, Japan(2006)
    • Year and Date
      2006-08-31
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Occupied site of Eu in GaN measured by microscopic emission spectroscopy2006

    • Author(s)
      J. Ishizumi, J. Sawahata, K. Akimoto, Y. Kanemitsu
    • Organizer
      The 67th Autumn Meeting, the Japan Society of Applied Physics
    • Place of Presentation
      Kyoto, Japan(2006)
    • Year and Date
      2006-08-31
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Microscopic emission spectroscopy of Eu doped GaN2006

    • Author(s)
      J. Ishizumi, J. Sawahata, K. Akimoto, Y. Kanemitsu
    • Organizer
      The 53th Spring Meeting, the Japan Society of Applied Physics
    • Place of Presentation
      Tokyo, Japan(2006)
    • Year and Date
      2006-03-25
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Pulsed laser annealing of GaN2006

    • Author(s)
      D. Saito, T. Hattori, K. Akimoto, T. Sakurai
    • Organizer
      The 53th Spring Meeting, the Japan Society of Applied Physics
    • Place of Presentation
      Tokyo, Japan(2006)
    • Year and Date
      2006-03-25
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] The effect of V/III ratio of Eu doped GaN on optical properties2005

    • Author(s)
      J. Sawahata, J. Seo, M. Takiguchi, D. Saito, N. Nemoto, K. Akimoto
    • Organizer
      The 66th Autumn Meeting, the Japan Society of Applied Physics
    • Place of Presentation
      Tokushima, Japan(2005)
    • Year and Date
      2005-09-09
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] TEM observation of rare earth doped GaN2005

    • Author(s)
      J. Seo, J. Sawahata, M. Takiguchi, D. Saito, K. Akimoto
    • Organizer
      The 66th Autumn Meeting, the Japan Society of Applied Physics
    • Place of Presentation
      Tokushima, Japan(2005)
    • Year and Date
      2005-09-09
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Effect of V/III ratio on the optical properties of Eu-doped GaN2005

    • Author(s)
      J. Sawahata, J. W. Seo, M. Takiguchi, D. Saito, S. Nemoto, K. Akimoto
    • Organizer
      6th International Conference of Nitride Semiconductors
    • Place of Presentation
      Bremen, Germany
    • Year and Date
      2005-08-24
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] TEM observation of Eu doped GaN and fabrication of n-GaN/ Eu : GaN/p-GaN structure2005

    • Author(s)
      J. Sawahata, H. Bang, J. W. Seo, T. Tsukamoto, and K. Akimoto
    • Organizer
      European Materials Research Society Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2005-05-30
    • Description
      「研究成果報告書概要(欧文)」より
  • [Book] 発光と受光の物理と応用2008

    • Author(s)
      秋本克洋, 他(分担執筆)
    • Total Pages
      423
    • Publisher
      培風館
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] ワイドギャップ半導体光・電子デバイス2006

    • Author(s)
      秋本克洋, 他(分担執筆)
    • Total Pages
      421
    • Publisher
      森北出版
    • Description
      「研究成果報告書概要(和文)」より
  • [Remarks] 「研究成果報告書概要(和文)」より

    • URL

      http://www.bk.tsukuba.ac.jp/~semicon/

URL: 

Published: 2010-02-04  

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