2007 Fiscal Year Final Research Report Summary
Basic research for development of electronics devices with strain-Si
| Project/Area Number |
17360139
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyoto University |
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Principal Investigator |
KIMURA Kenji Kyoto University, Graduate School of Engineering, Professor (50127073)
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| Co-Investigator(Kenkyū-buntansha) |
SUZUKI Motofumi Kyoto Univ., Graduate School of Engineering, Associate professor (00346040)
NAKAJIMA Kaoru Kyoto Univ., Graduate School of Engineering, Associate professor (80293885)
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| Project Period (FY) |
2005 – 2007
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| Keywords | strain-Si / high-resolution RBS / ion implantation / Ge growth / oxidation of Si |
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| Research Abstract |
New goniometers and load lock chambers were developed for the present high-resolution Rutherford backscattering spectroscopy (HRBS) system. By performing the channeling angular scan with the improved HRBS system and comparing the result with a trajectory simulation of channeling ions, the strain in the strain-Si grown on a SiGe layer was measured for both ion-implanted strain-Si samples and strain-Si samples annealed after ion implantation. It was found that the strain was recovered after annealing.
Germanium was epitaxially grown on a clean (001) surface of strain-Si and the growth process was observed in situ with HRBS. For comparison a similar measurement was done with normal Si It was hind that the interdiffusion between Ge and strain-Si is enhanced as compared with the normal Si The effect of strain on the initial oxidation process of Si(001) was also studied by in-situ HRBS observation. The saturation oxygen coverage on the strain-Si was hind to be the same as the normal Si at room temperature (RT) as well as at 640℃. More detailed observation at RT revealed that there is no difference at the oxygen exposure of 12 L but oxygen coverage for the strain-Si is larger at 30 L. This result together with the first principles calculation suggests that the effect of the strain on the oxidation depends on the adsorption site for oxygen.
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[Journal Article] Nuclear. Instruments, and Methods2006
Author(s)
T., Matsushita, W., Sakai, K., Nakajima, M., Suzuki, K., Kimura, A., Agarwal, H.-J., Gossmann, M., Ameen, H., Harima
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Journal Title
Physics Research B Vol.249
Pages: 432-435
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Nuclear. Instruments. and Methods2005
Author(s)
T., Matsushita, W., Sakai, K., Nakajima, M., Suzuki, K., Kimura, A., Agarwal, H.-J., Gossmann, M., Ameen
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Journal Title
Physics Research B Vol.230
Pages: 230-233
Description
「研究成果報告書概要(欧文)」より
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[Presentation] 高分解能RBSによる歪Siの歪み評価2006
Author(s)
一原主税, 小林 明, 牟礼祥一, 藤川和久, 笹川 薫, 小椋厚志, 木村健二
Organizer
2006年春季第53回応用物理学会関係連合講演会
Place of Presentation
武蔵工科大学
Year and Date
2006-03-22
Description
「研究成果報告書概要(和文)」より
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[Presentation] Strain measurement using high-resolution RBS2006
Author(s)
C., Ichihara, A., Kobayashi, S.,Mure, K., Fujikawa, K., Sasakawa, A., Ogura, K., Kimura
Organizer
Annual meeting of the Japan Society of Applied Physics
Place of Presentation
Musashi Institute of Technology
Year and Date
2006-03-22
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Measurement of the strain in strained-Si/Si0.79Ge0.21 with HRBS/channeling2005
Author(s)
T., Matsushita, W., Sakai, K., Nakajima, M., Suzuki, K., Kimura, A., Agarwal, H.-J., Gossmann, M., Ameen, H., Harima
Organizer
The 17th International Conference on Ion Beam.Analysis
Place of Presentation
Sevilla, Spain
Year and Date
2005-06-28
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Influence of strain on radiation damage studied by high-resolution RBS2005
Author(s)
T., Matsushita, K., Nakajima, M., Suzuki, K., Kimura, A., Agarwal, H.-J., Gossmann, M., Ameen
Organizer
The 3rd International Workshop on High-Resolution Depth Profiling
Place of Presentation
Bar Harbor, Maine, USA
Year and Date
2005-05-25
Description
「研究成果報告書概要(欧文)」より
