2006 Fiscal Year Final Research Report Summary
Hydrophilic of substrate surface for high quality film deposition using by high density radical treatment
| Project/Area Number |
17560009
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
IZUMI Akira Kyushu Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (30223043)
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| Project Period (FY) |
2005 – 2006
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| Keywords | Hot wire / nitridation / ammmonia / silicon nitride / HMDS / SiCN |
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| Research Abstract |
This paper reports about low-temperature nitridation of silicon surfaces using ammonia decomposed species generated on a heated tungsten filament. The surface of Si(100) was nitrided at low temperatures as low as 50℃. The relation between nitridation time and nitridation layer thickness showed that the layer thickness follows the linear law for small nitridation time and a parabolic relationship for large time. The water contact angle measurements revealed that nitridation layer proceeds with island growth in the early stage of nitridation.
SiCN films were deposited by Hot-wire CVD method using Hexamethyldisilazane (HMDS) which is an organic liquid material without exposition. It is found that SiCN films can be deposited using only HMDS as a source material. It is also found that the composition ratio of SiCN can be controlled by changing the flow rate of NH_3.
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