2006 Fiscal Year Final Research Report Summary
Metal organic vapor phase epitaxy of ZnTe based materials and their application to light emitting diodes
| Project/Area Number |
17560010
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Saga University |
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Principal Investigator |
OGAWA Hiroshi Saga Univ., Synchrotron light research center, Professor, シンクロトロン光応用研究センター, 教授 (10039290)
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| Co-Investigator(Kenkyū-buntansha) |
NISHIO Mitsuhiro Saga Univ., Fac. Of Sci.& Eng., Professor, 理工学部, 教授 (60109220)
QIXIN Guo Saga Univ., Fac. Of Sci.& Eng., Associate Professor, 理工学部, 助教授 (60243995)
TANAKA Tooru Saga Univ., Synctrotron light research center, Assistant, シンクロトロン応用研究センター, 助手 (20325591)
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| Project Period (FY) |
2005 – 2006
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| Keywords | ZnMgTe / ZnTe / MOVPE / Bridgman method / Purely green LED |
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| Research Abstract |
In this study, Phosphorus (P)-doped ZnTe based materials have been prepared and characterized for the applications to the light emitting diode. The P-doped ZnTe layers grown on ZnTe (1 0 0) substrates by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) using tris-dimethylaminophosphorus have exhibited good photoluminescence and electrical properties. As a result, ZnTe layers with a high carrier concentration of 1.3 X 10^<18> cm^<-3> are obtained by using this dopant source. P-doped Zn_<1-x>Mg_xTe (0 < x < 0.31) crystals have been grown by Bridgman technique or MOVPE. Bridgman-grown single crystalline wafers show the carrier concentration of 〜10^<17> cm^<-3>, indicating promising substrates for LED fabrication. On the other hand, suitable growth conditions for preparing epitaxial Zn_<1-x>Mg_xTe layers have been found through considerations on the premature reaction in the system. Furthermore, the specific contact resistance onto Zn_<1-x>Mg_xTe and the recovery from dry-etch-induced damage on ZnTe surfaces have been investigated. As for the preparation of light emitting diodes, a new technique, by which an Al concentration in the diffused layer can be controlled, has been invented, resulting in obtaining a LED with better performance.
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