2017 Fiscal Year Annual Research Report
Field-assisted assembly of the DNA networks for electronics and biologydcal applications
Project/Area Number |
17F17065
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Research Institution | Osaka University |
Principal Investigator |
松本 卓也 大阪大学, 理学研究科, 教授 (50229556)
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Co-Investigator(Kenkyū-buntansha) |
LIVSHITS GIDEON 大阪大学, 理学(系)研究科(研究院), 外国人特別研究員
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Project Period (FY) |
2017-04-26 – 2019-03-31
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Keywords | DNA electronics / field-assisteddepo. / nanofluidics / liquid metals |
Outline of Annual Research Achievements |
1. I set up for nanopipette system: For nanopipette control, implemented electronic circuit was designed and manufactured for current-detection of nanopipette proximity to surface. I Wrote Labview code to control motor stage for controllable nanopipette deposition. 2. I set up purchased Plan Fluor objective for fluorescence imaging. 3. I performed successful ligation and phenol-chloroform purification of high molecular weight Lambda-DNA, Successful staining of ligated DNA and deposition on APTES-coated Piranha-treated glass slides. Ligated Lambda-DNA was length ~100-200 um, similar to T4-DNA standard. 3. I prepared microelctrodes: I fabricated successfully mask and gate electro(gold on glass). Several attempts at deposition of DNA on glass. Large DNA fragments are visible inside nanopipette.
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Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
1.Language barrier makes it difficult to fully integrate into the scientific discussions 2.Purchasing of equipment takes long time. 3.New promising results and new directions of research 4.Good feedback and high quality of research partners means that problems get solved quickly and efficiently.
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Strategy for Future Research Activity |
1.Overcome problem with long-DNA moving through the nanopipette. 2.Release and deposition of DNA through nanopipette pore using syringe pump. 3.Assemble high-voltage (direct current) power supply for patterning of DNA on glass surface using back gate architecture. 4.Fabrication of smaller pore sizes, and extrusion of GaIn through these smaller cavities to obtain finer nanowires. 5.Finite-element simulation of GaIn wire properties and elastic response with the guidance of Eng. David Livshits.
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