Products Report

スパッタ法による高Ge組成の完全圧縮歪SiGeを用いた高性能Si/SiGeRTD

Research Project

Project/Area Number	17H03245
Research Category	Grant-in-Aid for Scientific Research (B)
Allocation Type	Single-year Grants
Section	一般
Research Field	Electron device/Electronic equipment
Research Institution	Tokyo University of Agriculture and Technology
Principal Investigator	Suda Yoshiyuki 東京農工大学, 工学(系)研究科(研究院), 名誉教授 (10226582)
Co-Investigator(Kenkyū-buntansha)	塚本貴広電気通信大学, 大学院情報理工学研究科, 助教 (50640942) 広瀬信光国立研究開発法人情報通信研究機構, 未来ICT研究所企画室, エキスパート (90212175)
Project Period (FY)	2017-04-01 – 2020-03-31

Research Products
(2 results)

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Patent(Industrial Property Rights) (1 results) (of which Overseas: 1 results)

[Journal Article] Hole-tunneling S♪i_<0.82>♪G♪e_<0.18>♪/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/c♪m^2♪ fabricated by sputter epitaxy2024
- Author(s)
  Yoshiyuki Suda, Nobumitsu Hirose, Takahiro Tsukamoto, Minoru Wakiya, Ayaka Shinkawa, Akifumi Kasamatsu, Toshiaki Matsui
- Journal Title
  
  Applied Physics Letters
  
  Volume: 124 Pages: 093502-1, 093502-6
- DOI
  10.1063/5.0180934
- Peer Reviewed
[Patent(Industrial Property Rights)] Manufacturing Method for Semiconductor Laminated Film, and Semiconductor Laminated Film2022
- Inventor(s)
  須田良幸、塚本貴広、本橋叡、出蔵恭平、大久保克己、八木拓馬、笠松章史、広瀬信光、松井敏明
- Industrial Property Rights Holder
  東京農工大学、情報通信研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  US11492696 B2
- Overseas