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スパッタ法による高Ge組成の完全圧縮歪SiGeを用いた高性能Si/SiGeRTD

Research Project

Project/Area Number 17H03245
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

Suda Yoshiyuki  東京農工大学, 工学(系)研究科(研究院), 名誉教授 (10226582)

Co-Investigator(Kenkyū-buntansha) 塚本 貴広  電気通信大学, 大学院情報理工学研究科, 助教 (50640942)
広瀬 信光  国立研究開発法人情報通信研究機構, 未来ICT研究所企画室, エキスパート (90212175)
Project Period (FY) 2017-04-01 – 2020-03-31
  • Research Products

    (2 results)

All 2024 2022

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Patent(Industrial Property Rights) (1 results) (of which Overseas: 1 results)

  • [Journal Article] Hole-tunneling S♪i_<0.82>♪G♪e_<0.18>♪/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/c♪m^2♪ fabricated by sputter epitaxy2024

    • Author(s)
      Yoshiyuki Suda, Nobumitsu Hirose, Takahiro Tsukamoto, Minoru Wakiya, Ayaka Shinkawa, Akifumi Kasamatsu, Toshiaki Matsui
    • Journal Title

      Applied Physics Letters

      Volume: 124 Pages: 093502-1, 093502-6

    • DOI

      10.1063/5.0180934

    • Peer Reviewed
  • [Patent(Industrial Property Rights)] Manufacturing Method for Semiconductor Laminated Film, and Semiconductor Laminated Film2022

    • Inventor(s)
      須田良幸、塚本貴広、本橋叡、出蔵恭平、大久保克己、八木拓馬、笠松章史、広瀬信光、松井敏明
    • Industrial Property Rights Holder
      東京農工大学、情報通信研究機構
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      US11492696 B2
    • Overseas

URL: 

Published: 2025-03-27  

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