Local magnetization control using spin Hall effect and its application to GMR magnetic sensors

2019 Fiscal Year Final Research Report

• Project/Area Number: 17H03249
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Nagoya University
• Principal Investigator: Iwata Satoshi 名古屋大学, 未来材料・システム研究所, 教授 (60151742)
• Co-Investigator(Kenkyū-buntansha): 加藤 剛志 名古屋大学, 工学研究科, 准教授 (50303665) ; 大島 大輝 名古屋大学, 未来材料・システム研究所, 助教 (60736528)
• Project Period (FY): 2017-04-01 – 2020-03-31
• Keywords: 巨大磁気抵抗効果 / スピンバルブ膜 / 反強磁性NiO層 / 磁気異方性 / 磁歪現象 / スピンホール効果 / スピン流 / 歪みセンサ

Outline of Final Research Achievements

In this research project, we have developed strain-sensor using giant magnetoresistance effect, where inverse magneto-striction effect is applied to the magnetic free layer in a spin valve structure. In order to avoid from influence of magnetic stray field, we employ sinusoidal signal detection method, where the magnetization direction of the magnetic free layer was modulated by alternative magnetic field by flowing AC current through Al strip line formed on GMR element. In next stage, we have investigated magnetization control by spin-Hall effect. The sensor device is composed from Ta/FeCo layer for producing spin current, a magnetoresistive spin-valve element and anti-ferromagneic NiO layer which magnetically connects Ta/FeCo and spin-valve layers. In this device, magnetization reversal by spin Hall effect was observed.

Free Research Field

スピントロニクス

Academic Significance and Societal Importance of the Research Achievements

本研究で開発を進めた歪みセンサは，マイクロサイズに微細化できることから，これをアレイ状に配列した触覚センサへの応用が考えられる。ロボットの指先の繊細な感覚をフィードバックすることを可能とする触覚センサは，介護ロボットなどにおいて求められている機能である。