2018 Fiscal Year Annual Research Report
Synthesis and Self-Assembly Characteristics of Brush Block Copolymers in Complex Nonlinear Topology
| Project/Area Number |
17J01195
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| Research Institution | Hokkaido University |
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Principal Investigator |
Ree Brian J. 北海道大学, 大学院総合化学院, 特別研究員(DC1)
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| Project Period (FY) |
2017-04-26 – 2020-03-31
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| Keywords | functional brush polymer / brush block copolymer / ferroelectric memory / oxygen-based memory |
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| Outline of Annual Research Achievements |
The second year continued the development of novel ferroelectric digital memory system and novel polymers with oxygen-based conjugated moieties.
The molecular characterization of four types of perfluorinated brush homopolymers via 1H NMR, IR, and SEC have confirmed successful synthesis. TGA analysis confirmed high degradation temperatures. DSC have confirmed brush packing behavior for one of the homopolymers and crystallization behavior for the other three. This unusual behavior is under careful investigation along with synchrotron X-ray scattering experiments. As thin film devices, all homopolymers exhibited ferroelectric property of different degrees. It’s suspected that the length of perfluorinated brush is causing this behavior.
Novel polymers with oxygen-based conjugated moieties have been confirmed successful synthesis via 1H NMR, IR, and SEC measurements. TGA/DSC measurements have revealed that the novel polymers possess high thermal stability, confirming they are good microelectronics materials. Synchrotron X-ray reflectivity and X-ray scattering analysis have confirmed their ability to form stable and smooth thin films. Evaluation of digital memory performance through semiconductor analyzer have confirmed the nanoscale polymer thin film devices exhibit nonvolatile write-once-read-many (WORM) memory or volatile dynamic random access memory (DRAM). This particular system is highly successful demonstrating oxygen’s ability to transport charges to induce digital memory behavior. The current research is being summarized into a manuscript for publication.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
The development of the well-defined polymers for ferroelectric memory system and oxygen-based memory system have been progressing well.
The synthesis of ferroelectric memory system will continue to the synthesis of topological block copolymers alongside the advanced characterization of prepared brush homopolymers via DSC, X-ray scattering, ferroelectric property measurements and digital memory measurements. Topological block copolymers, once fully synthesized, will follow with the basic molecular characterization as well as the measurement of ferroelectric property, digital memory performance, and nanostructure formation ability in nanoscale thin films.
The synthesis of the oxygen-based polymers for digital memory has been completed, as well as the basic characterization via 1H NMR, IR, and SEC. TGA/DSC measurements have confirmed high thermal stability of polymers. Synchrotron X-ray measurements have confirmed polymers’ ability to form stable and smooth thin films in nanoscale. Semiconductor analyzer measurements have confirmed high performance, energy efficient digital memory performance of these polymers. Potential resistive memory mechanisms and/or theories behind these polymers are under investigation as well as the preparation for manuscript for publication of the results.
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| Strategy for Future Research Activity |
As stated in the research proposal, synthetic work and basic molecular characterization of the synthesized polymers will continue.
As for the ferroelectric memory system, the characterization of homopolymers will continue as well as synthesis of topological block copolymers. The synthesized block copolymers will be subject to basic characterization as well as synchrotron X-ray reflectivity (XR) and X-ray scattering (XS) techniques to measure the nanostructure formation. Thin films of block copolymers will be fabricated to evaluate their ferroelectric property and resistive memory performance.
The synthetic procedure and basic molecular characterization for the oxygen-based polymers have been completed. Further characterization involving TGA/DSC, XR, and XS techniques to have confirmed high thermal stability and good ability to form stable thin films. In addition, polymer thin film devices have been evaluated through semiconductor analyzer to confirm nonvolatile memory and volatile memory characteristics. This is a great result that demonstrates oxygen’s ability to transport charges and give rise to resistive digital memory characters. Results are being summarized into manuscript for publication.
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