Study on electronic and atomic structure of ZnMgTe epilayers for electrical conductivity control

2022 Fiscal Year Final Research Report

• Project/Area Number: 17K06354
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Saga University
• Principal Investigator: Katsuhiko Saito 佐賀大学, シンクロトロン光応用研究センター, 助教 (40380795)
• Project Period (FY): 2017-04-01 – 2023-03-31
• Keywords: エピタキシャル成長 / 半導体 / 薄膜 / ドーピング / グリーンギャップ

Outline of Final Research Achievements

This study focused on ZnTe and ZnMgTe semiconductors, which are expected as novel emitting and cladding layer materials capable of covering a wide visible light range from green to blue, and as promising materials to address the "green gap" problem. We aimed to understand the factors that hindered the control of electrical conductivity in these materials, which have p-type unipolarity. By employing a combination of metal organic vapor phase epitaxy method and post-growth annealing, the activation rate of dopants was improved, and a negative correlation between carrier density and lattice constant was identified. Valuable knowledge was also acquired regarding the electronic states of ZnMgTe. Furthermore, significant insights were gained, including the impact of annealing temperature on the variation of complex acceptors.

Free Research Field

電気電子材料工学関連

Academic Significance and Societal Importance of the Research Achievements

ワイドギャップ半導体にみられる単極性は，デバイス応用を進める上で問題となる共通の課題である。本研究により得られた種々の基礎的知見および洞察は，純緑色発光に適したユニークな材料であるZnTeからなるLEDの高効率化と「グリーンギャップ」の克服，さらには純緑色レーザーへの道を切り開く点など，低炭素・省エネルギー社会における次世代光デバイス応用に寄与し得るものである。