Analysis of Single Photon Avalanche Diode with Monte Carlo Simulation

2020 Fiscal Year Final Research Report

• Project/Area Number: 17K06386
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Osaka Institute of Technology (2019-2020); Osaka University (2017-2018)
• Principal Investigator: Kamakura Yoshinari 大阪工業大学, 情報科学部, 教授 (70294022)
• Project Period (FY): 2017-04-01 – 2021-03-31
• Keywords: フォトダイオード / モンテカルロシミュレーション / アバランシェ破壊 / 赤外線検出素子 / InAs/GaSbタイプⅡ超格子

Outline of Final Research Achievements

A simulation tool based on the full-band Monte Carlo method has been developed to investigate the device characteristics as well as the internal microscopic processes in the single photon avalanche photodiode. Furthermore, a simulation framework has also been developed to investigate the properties of InAs/GaSb type-II superlattice for detecting light in the mid wavelength infrared region, and the physical mechanisms related to the dark current and the quantum efficiency were clarified, which could contribute to design the higher performance infrared photodetectors.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

微弱な光を検出する半導体デバイスの特性を計算機上でシミュレーションするためのフレームワークを開発することで、アバランシェ破壊を利用する光信号増幅の物理的素過程への理解を深めることができた。さらに将来的に応用が期待されている新規半導体材料を用いた高性能素子の設計に資する、新たなシミュレーション方法論を確立することができた。