Tuning of electronic ground states of 3D nanoporous graphene by nitrogen, phosphorous, boron doping

2018 Fiscal Year Final Research Report

• Project/Area Number: 17K14074
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Nanostructural physics
• Research Institution: Tohoku University
• Principal Investigator: Yoichi Tanabe 東北大学, 理学研究科, 助教 (80574649)
• Research Collaborator: Ito Yoshikazu
• Project Period (FY): 2017-04-01 – 2019-03-31
• Keywords: ナノポーラス / 窒素ドープ

Outline of Final Research Achievements

We investigated nitrogen doping effects on electronic states of 3D nanoporous graphene through electronic transport measurements. Clear evidences for additional electron scattering and electron doping effects were confirmed by magnetoresistance and Hall resistivity measurements. While transfer curves of electric double layer transistor showed about 10-25 times enhancement of the electrical resistance by the nitrogen doping, the resistance on/off ratio only increased from around 4-5 of the parent material to around 9-10 of the nitrogen doped one. Present results revealed that nitrogen doping effects on the 3D nanoporous graphene are contrastive with those in planer graphene where 0.1-0.2 eV band gap was formed.

Free Research Field

グラフェン

Academic Significance and Societal Importance of the Research Achievements

3次元多孔質グラフェンは広大な総表面積から水素発生電極や水蒸気発生装置への利用が期待されるが、機能向上に欠かせない窒素ドープにより電子状態にどのような変化があるのかこれまで明らかになっていなかった。本研究から、窒素ドープにより伝導電子の散乱効果の増大と電子注入が起る一方で、半導体ギャップの形成の様な電子状態の大きな変化が明確には起こっていないことが明らかになった。