2018 Fiscal Year Annual Research Report
Germanene on Insulators: Towards the realization of a 2D topological insulator
| Project/Area Number |
17K14116
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
フロランス アントワーヌ 北陸先端科学技術大学院大学, 先端科学技術研究科, 講師 (30628821)
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| Project Period (FY) |
2017-04-01 – 2019-03-31
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| Keywords | Germanene |
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| Outline of Annual Research Achievements |
This project was aimed at finding appropriate substrates for the growth of germanene, a graphene-like two-dimensional material made of germanium atoms and predicted to possess particular topological and conduction properties. For this purpose, Ge was grown on different substrates such as epitaxial h-BN and silicene which are respectively a two-dimensional insulating material and a two-dimensional semconducting material made of silicon atoms, both formed on ZrB2 thin films.
We found that the growth of Ge on h-BN gives rise to an amorphous Ge layer. The post-deposition annealing results in the damaging of the h-BN layer, which suggests that h-BN is not an appropriate substrate for germanene.
We also found that in the low-coverage regime, the growth of Ge on silicene gives rise to the formation of a silicene-Ge alloy. The investigation of the effect of the concentration of Ge atoms on its band structure provided the first experimental demonstration of the possibility of a band structure engineering in a two-dimensional alloy similar to that observed for instance in bulk SiGe alloy. At higher Ge coverages, different two-dimensional structures with unclear yet atomic structures were also observed.
An other part of the project was to use semiconducting InSe thin films grown on Ge(111) as substrate for the growth of germanene. The first step of this project, the determination of appropriate conditions for the growth of single-crystal InSe thin films on Ge(111), was fullfilled. The possibility of growing germanene by depositing Ge on InSe will be investigated in the coming months.
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[Presentation] Band engineering in silicene-Ge alloy2018
Author(s)
Fleurence A、Awatani Y、Wiggers F、Yonezawa T、Wallace S、Huet C、Yamada-Takamura Y
Organizer
14th international conference on atomically controlled surfaces Interfaces and nanostructures 2018 & 26th international colloquium on scanning tunneling microscopy
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