Fabrication of light element interstitial perpendicularly magnetized films on silicon substrates

2019 Fiscal Year Final Research Report

• Project/Area Number: 17K14651
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Tohoku University
• Principal Investigator: Ito Keita 東北大学, 金属材料研究所, 助教 (70791763)
• Project Period (FY): 2017-04-01 – 2020-03-31
• Keywords: 垂直磁化膜 / スピントロニクス / 軽元素 / 分子線エピタキシー / 第一原理計算

Outline of Final Research Achievements

Fabrication of a novel light element interstitial perpendicularly magnetized ferromagnetic metal films without rare elements are conducted. As a result of fabricating CoxMn4-xN films and evaluating the magnetic properties, the magnetic anisotropy and saturation magnetization can be controlled by the Co/Mn ratio. It becomes perpendicularly magnetized films at x≦0.8 and a saturation magnetization near x=0.8 is almost zero. As a result of characterization by x-ray magnetic circular dichroism measurements, it is revealed that Co atoms preferentially occupy the corner sites of the anti-perovskite lattice and have spin magnetic moments opposite to those of the corner Mn atoms. This is the origin of the magnetization compensation near x=0.8, and it can be said that this material is suitable for spintronics applications. Deployment on silicon substrates has become a future issue.

Free Research Field

磁性材料

Academic Significance and Societal Importance of the Research Achievements

本研究では、貴金属やレアアース等の希少元素を用いない新奇軽元素侵入型垂直磁化強磁性体金属薄膜の創製に成功した。CoxMn4-xNの格子定数は半導体産業で用いられているSi(001)基板の格子定数に近いことから、本成果は希少元素を含まない強磁性体を使用した高機能スピントロニクスデバイスの実現と、既存のLSI技術とスピントロニクス技術の融合への一歩とであり、産業的意義のある成果と考える。