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2018 Fiscal Year Annual Research Report

Development of Ge-based mid-infrared waveguide platform with strong optical confinement for on-chip gas sensing

Research Project

Project/Area Number 17K14670
Research InstitutionNTT Basic Research Laboratories

Principal Investigator

徐 学俊  日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主任研究員 (80593334)

Project Period (FY) 2017-04-01 – 2019-03-31
KeywordsMid-infrared photonics / Germanium / Gas sensing / Optical resonators
Outline of Annual Research Achievements

In order to solve the problems of low coupling efficiency with fiber and poor mechanical stability, a new type free-standing waveguide with subwavelength grating cladding has been proposed and demonstrated. By using SOI as test substrate, these waveguides, together with fiber-to-waveguide grating couplers and microdisk resonators have been fabricated. Coupling efficiency of over 10% was achieved, which is 4 times higher than last year’s results and enables us easily to perform the further spectrum measurement.
Due to change of institute, fabrication process of Ge-based devices and MIR transmission measurement system were re-established. Reactive-ion etching of Ge has been optimized that vertical and smooth sidewalls could be obtained. The design for SOI waveguide devices can be readily applied to Ge-on-Si. For measurement, an MIR differential-frequency generation laser with ~3.3 μm wavelength was used as light source, whose wavelength could be tuned over a range >10 nm, and thus more suitable for spectrum measurement.
The sensitivity of CH4 gas detection by using microdisk resonators has been analyzed. The effective absorption path length (Leff) could be significantly enhanced when microdisk was operating near critical coupling. The maximum Leff is also found to be increased as the intrinsic Q-factor of microdisk increases. For a feasible Q-factor of 1000, Leff of longer than 1 meter can be readily achieved in a microdisk with radius of 100 μm. These results indicate that the proposed platform is very promising for high sensitivity on-chip gas detection.

  • Research Products

    (10 results)

All 2018

All Journal Article (4 results) (of which Peer Reviewed: 2 results) Presentation (6 results) (of which Int'l Joint Research: 2 results,  Invited: 1 results)

  • [Journal Article] Effects of post annealing on in-situ n-doped Ge-on-Si2018

    • Author(s)
      Kumazawa Yuta、Xu Xuejun、Maruizumi Takuya、Sawano Kentarou
    • Journal Title

      Semiconductor Science and Technology

      Volume: 33 Pages: 124006~124006

    • DOI

      10.1088/1361-6641/aae62e

    • Peer Reviewed
  • [Journal Article] Resonant light emission from uniaxially tensile-strained Ge microbridges2018

    • Author(s)
      Zhou Peiji、Xu Xuejun、Matsushita Sho、Sawano Kentarou、Maruizumi Takuya
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Pages: 04FH10~04FH10

    • DOI

      10.7567/JJAP.57.04FH10

    • Peer Reviewed
  • [Journal Article] シリコンフォトニクス光配線に向けたゲルマニウム発光素子2018

    • Author(s)
      徐 学俊・澤野憲太郎
    • Journal Title

      光アライアンス

      Volume: 29 Pages: 19~25

  • [Journal Article] 絶縁膜上ゲルマニウム基板上に円型分布ブラッグ反射鏡で高性能光共振器を開発2018

    • Author(s)
      徐学俊、澤野憲太郎、丸泉琢也
    • Journal Title

      レーザ加工学会誌

      Volume: 25 Pages: 43~45

  • [Presentation] CMOS-compatible germanium light sources2018

    • Author(s)
      Kentarou Sawano, Xuejun Xu, Takuya Maruizumi
    • Organizer
      233rd ECS Meeting
    • Int'l Joint Research / Invited
  • [Presentation] Effects of post annealing on in-situ n-doped Ge-on-Si2018

    • Author(s)
      Yuta Kumazawa, Xuejun Xu, Kentarou Sawano, and Takuya Maruizumi
    • Organizer
      9th International SiGe Technology and Device Meeting (ISTDM) and 11th International Conference on Silicon Epitaxy and Heterostructures (ICSI)
    • Int'l Joint Research
  • [Presentation] Ge量子ドットを有する円形DBR微小共振器構造の発光特性2018

    • Author(s)
      石井 大介、水谷 昂平、原田 波子、徐 学俊、丸泉 琢也、澤野 憲太郎
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
  • [Presentation] ウェットエッチングによる歪みGeマイクロブリッジの作製2018

    • Author(s)
      田村 亮貴、大久保 亮太、徐 学俊、丸泉 琢也、澤野 憲太郎
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
  • [Presentation] In-situ n型ドープGe-on-Siにおけるポストアニールの影響2018

    • Author(s)
      熊澤祐太,徐学俊,澤野憲太郎,丸泉琢也
    • Organizer
      2018年第65回応用物理学会春季学術講演会
  • [Presentation] Ge中赤外光グレーティングカプラ2018

    • Author(s)
      大迫力人,徐学俊,澤野憲太郎,丸泉琢也
    • Organizer
      2018年第65回応用物理学会春季学術講演会

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Published: 2019-12-27  

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