Hetero-junction devices of epsilon-Ga2O3 semiconductors by mist CVD technique

2018 Fiscal Year Final Research Report

• Project/Area Number: 17K17839
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials; Crystal engineering
• Research Institution: Kyoto Institute of Technology
• Principal Investigator: Hiroyuki Nishinaka 京都工芸繊維大学, 電気電子工学系, 助教 (70754399)
• Project Period (FY): 2017-04-01 – 2019-03-31
• Keywords: 酸化ガリウム / 強誘電体 / 混晶 / ミストCVD / 結晶成長

Outline of Final Research Achievements

In this research, to achieve epsilon-Gallium oxide based hetero-junction transistor operation, the epitaxial growth and characterization of epsilon-Ga2O3 thin films grown by mist CVD were investigated in detail. The detailed results are as following; (1)The epitaxial epsilon Ga2O3 thin films exhibiting smooth surfaces were successfully grown by controlling the starting solution conditions and the single-phase epsilon-Ga2O3 thin films without other phases were grown by the insertion of NiO buffer layers. (2)The incorporation of Al and In into epsilon-Ga2O3 thin films allowed to control the bandgap of epsilon-Ga2O3 from 4.5 to 5.9 eV by simply dissolving the Al and In precursors in the starting solution with Ga precursor.

Free Research Field

結晶成長

Academic Significance and Societal Importance of the Research Achievements

本研究は、GaNを超える可能性のあるパワー半導体であるε-酸化ガリウムに関する研究であり、本研究を通じてデバイス応用に結晶成長技術の基礎が構築された。特にバンドギャップエンジニアリングはヘテロ接合デバイスに必須の技術であり、そのバンドギャップエンジニアリングに成功したこととその物性解明の学術的意義は大きい。また、本研究がさらに進展すれば、GaNを超えるパワー半導体が実現されることとなり、より低消費な省エネ社会への実現に貢献する社会的意義の大きな研究であると言える。