2019 Fiscal Year Final Research Report
Development of novel AlN crystal growth method using Al vapor generated from heated Ga-Al soluiton
| Project/Area Number |
17K19067
|
|---|
| Research Category |
Grant-in-Aid for Challenging Research (Exploratory)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Applied physics and engineering and related fields
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2017-06-30 – 2020-03-31
|
| Keywords | 気相成長 / 蒸発 / 窒化アルミニウム / エピタキシャル成長 |
|---|
| Outline of Final Research Achievements |
AlGaN-based LEDs have a wide ultraviolet light emission range between 3.4 and 6.0 eV; therefore, they have potential in many applications such as sterilization, white light illumination, water or air purification equipment. AlN is a promising substrate material for AlGaN-based LEDs. In this study, authors have developed a new AlN vapor phase growth method using evaporation of Al from Ga-Al flux.
|
| Free Research Field |
結晶成長
|
| Academic Significance and Societal Importance of the Research Achievements |
AlNは高温で高い解離圧を示すため，常圧下では融解する前に解離する．そのため，シリコンのように自身の融液から単結晶を作製することが困難であり，その量産技術が確立していない．そこで，本研究課題では，AlN結晶の量産技術となり得る手法の開発を目指した研究を行った．本研究課題の成果を元に，本技術の実用化へ向けた研究を継続し，AlN結晶の量産技術の確立を目指す．
|
