2010 Fiscal Year Final Research Report
Semiconductor Nanowire Electronics by Selective-Area Metal-Organic Vapor Phase Epitaxy
| Project/Area Number |
18002003
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| Research Category |
Grant-in-Aid for Specially Promoted Research
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
Mathematics and Physics
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| Research Institution | Hokkaido University |
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Principal Investigator |
FUKUI Takashi Hokkaido University, 大学院・情報科学研究科, 教授 (30240641)
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| Co-Investigator(Kenkyū-buntansha) |
AMEMIYA Yoshihito 北海道大学, 大学院・情報科学研究科, 教授 (80250489)
MOTOHISA Junichi 北海道大学, 大学院・情報科学研究科, 教授 (60212263)
KASAI Seiya 北海道大学, 大学院・情報科学研究科, 准教授 (30312383)
HARA Shinjiro 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50374616)
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| Project Period (FY) |
2006 – 2010
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| Keywords | ナノワイヤ / 化合物半導体 / 結晶成長 / 1次元物性 / 磁性体 |
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| Research Abstract |
A selective growth method for semiconductor nanowires by using electron beam lithography and metal organic vapor phase epitaxy has been established. The crystal structure and optical properties of GaAs and InP nanowires grown were characterized by electron microscopy and photoluminescence. Transistors, light emitting diodes and solar cells using heterostructure/p-n junction nanowires were fabricated to investigate the device characteristics, which showed promise for application to future nano-electronics.
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Research Products
(8 results)
