Development of Atomically Controlled Plasma Processing for Group IV Semiconductor Quantum-Effect Device Fabrication

2008 Fiscal Year Self-evaluation Report

• Project/Area Number: 18063001
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Tohoku University
• Principal Investigator: SAKURABA Masao Tohoku University, 電気通信研究所, 准教授 (30271993)
• Project Period (FY): 2006 – 2009
• Keywords: 量子へテロ構造 / プラズマ / エピタキシャル成長 / 原子層制御 / IV族半導体

Research Abstract

大規模集積回路に搭載可能な室温動作IV族系量子デバイスの実現のためには、ナノメートルオーダ寸法の高Ge比率IV族系ヘテロ構造・界面形成を原子精度で制御する技術が重要である。このことから、本研究では、ECRプラズマCVD法によりIV族系ナノメートルオーダ薄膜形成やドーピングを原子層制御する技術の確立を目指して、低エネルギーECRプラズマ照射下での表面反応を制御し、表面及びヘテロ界面が原子レベルで平坦かつ急峻に制御された原子層制御プラズマプロセスを構築する。同時にIV族系量子デバイス製作と特性評価を行い、室温での量子効果特性の制御と高性能化のための指針を得るとともに、バルク状態とは異なるナノメートルオーダ構造特有の電子・光物性を探索し、IV族系半導体ナノエレクトロニクスの継続的発展に資することを目指す。

Research Products

• [Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2009)
  • Author(s): T. Seo, K. Takahashi, M. Sakuraba and J. Murota
  • Journal Title: Solid State Electron accepted
• [Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (2008)
  • Author(s): M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
  • Journal Title: Thin Solid Films Vol.517 Pages: 10-13
  • Peer Reviewed
• [Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • Author(s): T. Seo, M. Sakuraba and J. Murota
  • Journal Title: Thin Solid Films Vol.517 Pages: 110-112
  • Peer Reviewed
• [Journal Article] Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si(100) Using ECR Plasma CVD without Substrate Heating (2007)
  • Author(s): K. Sugawara, M. Sakuraba and J. Murota
  • Journal Title: Semicond. Sci. Technol. Vol.22, No.1 Pages: S42-S45
  • Peer Reviewed
• [Presentation] Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron- Resonance Plasma (2008)
  • Author(s): T. Nosaka, M. Sakuraba and J. Murota
  • Organizer: Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • Place of Presentation: Nagoya, Japan, No.ZO-5
  • Year and Date: 20081209-13
• [Presentation] Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100) (2008)
  • Author(s): K. Sugawara, M. Sakuraba and J. Murota
  • Organizer: Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • Place of Presentation: Nagoya, Japan, No. ZP-9.
  • Year and Date: 20081209-13
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2007)
  • Author(s): M. Sakuraba, R. Ito, T. Seo, and J. Murota
  • Organizer: Symp. E9 : ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc.)
  • Place of Presentation: Washington, DC, USA, Abst.No.1283.
  • Year and Date: 20071207-12
• [Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (2007)
  • Author(s): M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
  • Organizer: 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
  • Place of Presentation: Marseille, France, No.S1-I3.
  • Year and Date: 20070520-24
• [Remarks] 所属特定領域「ポストスケール」のウェッブサイト(領域番号458)
  • URL: http://alice.xtal.nagoya-u.ac.jp/post_scaling/