2009 Fiscal Year Final Research Report
Development of Atomically Controlled Plasma Processing for GroupIV Quantum Device Fabrication
| Project/Area Number |
18063001
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
SAKURABA Masao Tohoku University, 電気通信研究所, 准教授 (30271993)
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| Co-Investigator(Kenkyū-buntansha) |
MUROTA Junichi 東北大学, 電気通信研究所, 教授 (70182144)
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| Project Period (FY) |
2006 – 2009
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| Keywords | 量子へテロ構造 / プラズマ / エピタキシャル成長 / 原子層制御 / IV族半導体 |
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| Research Abstract |
By utilizing surface reaction of reactant gases under ECR Ar plasma irradiation without substrate heating, epitaxial growth of atomically flat highly strained films of Ge and Si as well as B atomic-layer doped Si were demonstrated. Moreover, by lowering of the plasma energy in the epitaxial growth, it was clarified that plasma damage and surface B reduction by Ar plasma irradiation can be effectively suppressed and it is quite important to increase of strain and B concentration in the B atomic-layer doped films.
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