Control of Nanostructure-induced Physical Properties and It's Applications to Functional Silicon Devices

2008 Fiscal Year Self-evaluation Report

• Project/Area Number: 18063007
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: KOSHIDA Nobuyoshi Tokyo University of Agriculture and Technology, 大学院共生科学技術研究院, 教授 (50143631)
• Project Period (FY): 2006 – 2009
• Keywords: 電子デバイス / 集積回路

Research Abstract

量子サイズナノ結晶シリコンにおいて生じる特異な光電子物性を探索し、その制御と特性向上を通じて素子化に発展させる。対象とする主な物性と研究課題を以下に示す。
(1)可視発光-PL発光特性の高効率化・高安定化と波長制御を実現し、得られたPL発光試料について、偏光メモリや光増幅能を明らかにする。また、その結果をEL素子の開発に生かす。
(2)弾道電子効果-弾道輸送機構の解析とデバイス化に重点を置き、ナノドット構造の弾道走行効果を動特性などにより検証する。とともに、真空、気体、溶液に弾道素子の概念設計を行う。
(3)超音波放出-について、特性向上とデバイス化の基礎検討を行う。それぞれの主要

Research Products

• [Journal Article] Stabilized porous silicon optical superlattices with controlled surface passivation (2008)
  • Author(s): M. Ghulinyan, B. Gelloz, T. Ohta, L. Pavesi, D.J. Lockwood, and N. Koshida
  • Journal Title: Appl. Phys. Lett 93 Pages: 061113-115
  • Peer Reviewed
• [Journal Article] Specific spectral features in electron emission from nanocrystalline poly-silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer (2008)
  • Author(s): D. Sakai, C. Oshima, T. Ohta, and N. Koshida
  • Journal Title: J. Vac. Sci. Technol B 26 (5) Pages: 1782-1786
  • Peer Reviewed
• [Journal Article] Sub-30 nm Parallel EB Lithography using Nano-Si Planar Ballistic Electron Emitter (2008)
  • Author(s): A Kojima, H. Ohyi, N. Koshida
  • Journal Title: J. Vac. Sci. Technol.・Sci. Technol B 26(6)・B 26 Pages: 2053-2057・711-715
  • Peer Reviewed
• [Journal Article] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode (2008)
  • Author(s): T. Ohta, B. Gelloz, and N Koshida
  • Journal Title: J. Vac. Sci. Technol B 26 Pages: 716-719
  • Peer Reviewed
• [Journal Article] Improved photoconduction effects of nanometer-sized Si dot multilayers (2008)
  • Author(s): Y. Hirano, S. Yamazaki, and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys 47 Pages: 3095-3098
  • Peer Reviewed
• [Journal Article] Acoustic Wave manipulation by phased operation of two-dimensionally arrayed nanocrystalline silicon ultrasonic emitters (2008)
  • Author(s): B. Gelloz, M. Sugawara and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys 47 Pages: 3123-3126
  • Peer Reviewed
• [Presentation] Direct Excitation of Xenon by Ballistic Electrons Emitted from Nanocrystalline Silicon Planar Cathode and Vacuum-Ultraviolet Light Emission (2008)
  • Author(s): T. Ichihara, T. Hatai, and N. Koshida
  • Organizer: Int. Display Workshop
  • Place of Presentation: Niigata
  • Year and Date: 20081200
• [Presentation] Photonic, electronic, and acoustic devices based on nanocrystalline silicon (2008)
  • Author(s): N. Koshida and B. Gelloz
  • Organizer: ECS Meet
  • Year and Date: 20080000
• [Presentation] Specific blue light emission from nanocrystalline porous Si, treated by high-pressure water vapor annealing (2008)
  • Author(s): B. Gelloz, R. Mentek and N. Koshida
  • Organizer: 2008 Int. Conf
  • Year and Date: 20080000
• [Presentation] Sound emission from nanocrystalline silicon device under operation of electroluminescence (2008)
  • Author(s): B. Gelloz, T. Shibata and N. Koshida
  • Organizer: 2008 Int. Conf
  • Year and Date: 20080000
• [Presentation] Development of efficient broadband digital acoustic device based on nanocrystalline silicon ultrasound emitter
  • Author(s): N. Koshida, A. Asami, and B. Gelloz
  • Organizer: IEDM 2008 Technical Digest
• [Book] Device Applications of Silicon Nanocrystals and Nanostructures (2009)
  • Author(s): N. Koshida, (Ed.)
  • Total Pages: 348
  • Publisher: Springer, New York
• [Remarks] T. Ichihara, T. Hatai and N. Koshida, Int. Display Workshop 2008, Best Paper Award (Dec., 2008)
• [Patent(Industrial Property Rights)] シリコン系青色発光材料の製造方法及びシリコン系青色発光材料 (2008)
  • Inventor(s): 越田信義、B. Gelloz
  • Industrial Property Rights Holder: 東京農工大学
  • Industrial Property Number: 特許, 特願2008-223583
  • Filing Date: 2008-09-01