Robustness of Three-Dimensional MOSFETs

2009 Fiscal Year Final Research Report

• Project/Area Number: 18063009
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: IWAI Hiroshi Tokyo Institute of Technology, フロンティア研究センター, 教授 (40313358)
• Co-Investigator(Kenkyū-buntansha): HATTORI Takeo 東京工業大学, フロンティア研究センター, 客員教授 (10061516) ; TSUTSUI Kazuo 東京工業大学, 大学院・総合理工学研究科, 教授 (60188589) ; KAKUSHIMA Kuniyuki 東京工業大学, 大学院・総合理工学研究科, 助教 (50401568) ; PARHAT Ahmet 東京工業大学, フロンティア研究センター, 特任准教授 (00418675)
• Project Period (FY): 2006 – 2009
• Keywords: ばらつき / ゆらぎ / CMOS / ダブルゲート / FinFET / シリサイド / 感度解析

Research Abstract

For the future large scale integrated circuit, new transistor with three-dimensional structures will be used in near future. However, variability of transistor characteristics, which is very significant problem on scaling down of device sizes, on the new type transistor has not been known well. In this work, comprehensive study of variability resulted from fluctuations of various device parameters was carried out, and proposed guiding principles for realizing robust transistors for the variability. In addition, a new process technology of silicide electrodes which will be useful to the robust transistors was developed.

Research Products

• [Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects (2010)
  • Author(s): Y. Koyabashi, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
  • Journal Title: Jpn. J. Appl. Phys Vol.49 Pages: 044201
  • Peer Reviewed
• [Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness (2010)
  • Author(s): Y. Kobayasih, K. Kakushima, P. Ahmet, V.R. Rao, K. Tsutsui, H. Iwai
  • Journal Title: Microelectronics Reliability Vol.50 Pages: 332-337
  • Peer Reviewed
• [Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs (2009)
  • Author(s): K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ch, orkar, T. Hattori, H. Iwai
  • Journal Title: ECS Trans Vol.16 Pages: 29-34
• [Journal Article] Thermal Stability of Ni silicide Films on Heavily Doped n+ and p+ Si Substrates (2008)
  • Author(s): P. Ahmet, T. Shiozawa, K. Nagahiro, T. Nagata, K. Kakushima, K. Tsutsui, T. Chikyo, H. Iwai
  • Journal Title: Microelectronic Engineering Vol.85 Pages: 1642-1645
  • Peer Reviewed
• [Journal Article] Parasitic Effects in Multi-gate MOSFETs (2007)
  • Author(s): Y. Kobayashi, V.R. Manoj, K. Tsutsui, V. Hariharan, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
  • Journal Title: IEICE Trans. on Electronics Vol.E90-C Pages: 2051-2056
  • Peer Reviewed
• [Presentation] Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs (2010)
  • Author(s): P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, K. Tsutsui, H. Iwai
  • Organizer: 10th Int. Workshop on Junction Technology (IWJT2010)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-05-11
• [Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs (2008)
  • Author(s): K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A.N. Chandorkar, T. Hattori, H. Iwai
  • Organizer: 214th Electrochem. Society (ECS) Meeting (PRiME 2008)
  • Place of Presentation: Honolulu, USA
  • Year and Date: 2008-10-14
• [Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects (2008)
  • Author(s): Y. Kobayashi, A.B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
  • Organizer: 214th Electrochem. Society (ECS) Meeting (PRiME 2008)
  • Place of Presentation: Honolulu, USA
  • Year and Date: 2008-10-14
• [Presentation] Analysis of Threshold Voltage Variations of FinFETs: Separation of Short Channel Effects and Space Charge Effects (2008)
  • Author(s): Y. Kobayashi, K. Tsutsui, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
  • Organizer: Int. Conf. on Solid State Devices and Materials (SSDM 2008)
  • Place of Presentation: Ibaraki, Japan
  • Year and Date: 2008-09-25