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2009 Fiscal Year Final Research Report

Nanoscale-multiple-junctions : Transport control and development of new functions

Research Project

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Project/Area Number 18063010
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionShizuoka University

Principal Investigator

TABE Michiharu  Shizuoka University, 電子工学研究所, 教授 (80262799)

Project Period (FY) 2006 – 2009
Keywords電子デバイス・機器 / 電子・電気材料 / トンネル現象 / シリコンナノデバイス
Research Abstract

We have fabricated and studied multi-tunnel junctions SOI-MOSFETs by using donor potentials as quantum dots. As a result, 1) photons are detected as current level switching in random telegraph signal, 2) single-electron transfer in random potential landscape is realized, and 3) single dopant potentials in channel are detected by low-temperature Kelvin Probe Force Microscope.

  • Research Products

    (39 results)

All 2010 2009 2008 2007 2006

All Journal Article (11 results) (of which Peer Reviewed: 11 results) Presentation (28 results)

  • [Journal Article] Observation of Discrete Dopant Potential and Its Application to Si Single-Electron Devices2010

    • Author(s)
      M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, T. Mizuno
    • Journal Title

      Thin Solid Films Vol.518

      Pages: S38-S43

    • Peer Reviewed
  • [Journal Article] Single-electron transport characteristics in quantum dot arrays due to ionized dopants2009

    • Author(s)
      D. Moraru, M. Ligowski, J.C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, M. Tabe
    • Journal Title

      Journal of Automation, Mobile Robotics & Intelligent Systems Vol.3,No.4

      Pages: 52-54

    • Peer Reviewed
  • [Journal Article] A photon position sensor consisting of singleelectron circuits2009

    • Author(s)
      A.K. Kikombo, M. Tabe, Y. Amemiya
    • Journal Title

      Nanotechinology Vol.20

      Pages: 405209-1-7

    • Peer Reviewed
  • [Journal Article] Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-On-Insulator Field-Effect Transistors2009

    • Author(s)
      D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno, M. Tabe
    • Journal Title

      Appl. Phys. Express Vol.2

      Pages: 071201-1-3

    • Peer Reviewed
  • [Journal Article] Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots2009

    • Author(s)
      K. Yokoi, D. Moraru, M. Ligowski, M. Tabe
    • Journal Title

      Jpn. J. Appl. Phys. Vol.48

      Pages: 024503-1-7

    • Peer Reviewed
  • [Journal Article] Observation of individual dopants in a thin silicon layer by low temperture Kelvin Prove Force Microscope2008

    • Author(s)
      M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, M. Tabe
    • Journal Title

      Appl. Phys. Lett. Vol.93,No.14

      Pages: 142101-1-3

    • Peer Reviewed
  • [Journal Article] Thermal agglomeration of ultrathin silicon-on-insulator layers: crystalline orientation dependence2008

    • Author(s)
      Y. Fan, R. Nuryadi, Z.A. Burhanudin, M. Tabe
    • Journal Title

      Jpn. J. Appl. Phys. Vol.47,No.3

      Pages: 1461-1464

    • Peer Reviewed
  • [Journal Article] Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection2008

    • Author(s)
      M. Tabe, R. Nuryadi, D. Moraru, Z.A. Burhanudin, K. Yokoi, H. Ikeda
    • Journal Title

      ACTA PHYSICA POLONICA A Vol.113,No.3

      Pages: 811-814

    • Peer Reviewed
  • [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorousdoped silicon nanowires2007

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa, M. Tabe
    • Journal Title

      Physical Review B Vol.76,no.7

      Pages: 075332-1-5

    • Peer Reviewed
  • [Journal Article] Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor2007

    • Author(s)
      Z.A. Burhanudin, R. Nuryadi, M. Tabe
    • Journal Title

      Applied Physics Letters Vol.91,No.4

      Pages: 042103-1-3

    • Peer Reviewed
  • [Journal Article] Numerical study of turnstile operation in random-multidotchannel field-effect transistor2006

    • Author(s)
      H. Ikeda, M. Tabe
    • Journal Title

      J. Appl. Phys. Vol.99

      Pages: 073705-1-6

    • Peer Reviewed
  • [Presentation] Towards Silicon-based Single Dopant Technology2010

    • Author(s)
      M. Tabe
    • Organizer
      JST Int. Sympo. on Atom-scale Silicon Hybrid Nanotechnolgies for 'More-than-Moore' and 'Beyond CMOS' Era
    • Place of Presentation
      Southampton, UK
    • Year and Date
      20100301-20100302
  • [Presentation] Si Single-Dopant FETs and Observation of Single -Dopant Potential by LT-KFM2010

    • Author(s)
      M. Tabe, D. Moraru, M. Anwar, Y. Kawai, S. Miki, Y. Ono, T. Mizuno
    • Organizer
      5th Int. Workshop on New Group IV Semiconductor Nanoelectronics (SiGe(C))
    • Place of Presentation
      Sendai
    • Year and Date
      20100129-20100130
  • [Presentation] シングルドーパントデバイスの現状と課題2010

    • Author(s)
      田部道晴
    • Organizer
      応用物理学会シリコンテクノロジー分科会第117回研究集会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2010-01-22
  • [Presentation] Breakthrough of Advanced Nano -Silicon Devices2009

    • Author(s)
      M. Tabe, D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki, T. Mizuno
    • Organizer
      2nd Int. Conf. on Advanced Material and Practice of Nanotechnology (ICAMPN)
    • Place of Presentation
      Jakarta, Indonesia
    • Year and Date
      20091111-20091112
  • [Presentation] Single Dopant Electronics2009

    • Author(s)
      M. Tabe
    • Organizer
      The 6th Korean-Japanese Student Workshop (KJS Workshop)
    • Place of Presentation
      Hamamatsu
    • Year and Date
      20091029-20091030
  • [Presentation] Single-Electron Transport through Discrete Dopants2009

    • Author(s)
      D. Moraru, M. Anwar, M. Ligowski, S. Miki, R. Nakamura, T. Mizuno, R. Jablonski, M. Tabe
    • Organizer
      2009 Int. Conf. on Solid State Devices and Materials (SSDM 2009)
    • Place of Presentation
      Sendai
    • Year and Date
      20091007-20091009
  • [Presentation] Si Multi-dot FET Using Discrete Dopants2009

    • Author(s)
      M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, T. Mizuno
    • Organizer
      5th Handai Nanoscience and Nanotechnology Int. Sympo.
    • Place of Presentation
      Osaka
    • Year and Date
      20090901-20090903
  • [Presentation] Observation of discrete dopant potential and its application to Si single-electron devices2009

    • Author(s)
      M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, T. Mizuno
    • Organizer
      6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6)
    • Place of Presentation
      California, USA
    • Year and Date
      20090517-20090522
  • [Presentation] KFMによる半導体不純物分析の最前線2009

    • Author(s)
      田部道晴
    • Organizer
      日本学術振興会第167委員会/第53回研究会
    • Place of Presentation
      キャンパスプラザ京都
    • Year and Date
      20090108-20090109
  • [Presentation] シリコンドーパント原子デバイス2009

    • Author(s)
      田部道晴
    • Organizer
      電子情報通信学会北海道支部およびIEEE札幌支部共催講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2009-12-11
  • [Presentation] Application and Observation of Discrete Dopant Potential for Si Single-Electron Devices2008

    • Author(s)
      M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, T. Mizuno
    • Organizer
      IUMRS Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
    • Place of Presentation
      Nagoya
    • Year and Date
      20081209-20081213
  • [Presentation] Si Single-Electron SOI- MOSFETs: Interplay with Individual Dopants and Photons2008

    • Author(s)
      M. Tabe, Z.A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski, T. Mizuno
    • Organizer
      MRS fall meeting 2008
    • Place of Presentation
      Boston, USA
    • Year and Date
      20081201-20081205
  • [Presentation] Si single-electron devices: manipulation of individual dopants2008

    • Author(s)
      M. Tabe
    • Organizer
      The 5th Int. Workshop on Nanoscale Semiconductor Devices (IWNSD)
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2008-05-16
  • [Presentation] Si Single-Electron Devices: Interaction with Individual Dopants and Photons2007

    • Author(s)
      M. Tabe, R. Nuryadi, D. Moraru, Z.A. Burhanudin, H. Ikeda
    • Organizer
      Fifth Int. Sympo. on Control of Semiconductor Interfaces (ISCSI-V)
    • Place of Presentation
      Tokyo
    • Year and Date
      20071112-20071114
  • [Presentation] Si Bicrystal Structures for Multijunction Single- Electron Devices2007

    • Author(s)
      M. Tabe, R. Nuryadi, T. Ishino, Y. Kasai, D. Nagata, K. Ebisawa, H. Ikeda
    • Organizer
      3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics (SiGe(C) 2007)
    • Place of Presentation
      Sendai
    • Year and Date
      20071108-20071109
  • [Presentation] Manipulation of single-electrons in Si nanodevices-Interplay with photons and ions-2007

    • Author(s)
      M. Tabe, R. Nuryadi, Z.A. Burhanudin, D. Moraru, K. Yokoi, H. Ikeda
    • Organizer
      Mechatronics 2007
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      20070919-20070921
  • [Presentation] Si multidot FETs for single-electron transfer and single-photon detection2007

    • Author(s)
      M. Tabe, R. Nuryadi, D. Moraru, Z.A. Burhanudin, K. Yokoi, H. Ikeda
    • Organizer
      13th Int. Sympo. on Ultrafast Phenomena in Semiconductors (13-UFPS)
    • Place of Presentation
      Vilnius, Lithuania
    • Year and Date
      20070826-20070829
  • [Presentation] Si single-electron FETs for single -photon detection2007

    • Author(s)
      M. Tabe, R. Nuryadi, Z. Burhanudin
    • Organizer
      2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2007)
    • Place of Presentation
      Gyeongju, Korea
    • Year and Date
      20070625-20070627
  • [Presentation] Effects of Parameter Randomness on Quantized-electron transfer in 1D Multiple-Tunnel-Junction Arrays2007

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, M. Tabe
    • Organizer
      2007 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto
    • Year and Date
      20070610-20070611
  • [Presentation] Ionization of single-acceptors in p-Si epilayer observed using single-hole-tunneling transistor2007

    • Author(s)
      Z.A. Burhanudin, R. Nuryadi, M. Tabe
    • Organizer
      2007 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto
    • Year and Date
      20070610-20070611
  • [Presentation] Si単電子デバイスとフォトン検出2007

    • Author(s)
      田部道晴
    • Organizer
      日本学術振興会第151委員会1月研究会
    • Place of Presentation
      アストンホテル熱海
    • Year and Date
      2007-01-29
  • [Presentation] シリコン単電子デバイス-ランダムドット系での単電子操作と光応用-2007

    • Author(s)
      田部道晴
    • Organizer
      応用物理学会第20回上田記念講演会および東海支部40周年記念会
    • Place of Presentation
      名古屋ガーデンパレス
    • Year and Date
      2007-01-06
  • [Presentation] Photo Illumination Effect on Single-Electron- Tunneling Current Through a Thin Bicrystal SOI FET2006

    • Author(s)
      R. Nuryadi, Z.A. Burhanudin, R. Yamano, T. Ishino, Y. Ishikawa, M. Tabe
    • Organizer
      Solid State Devices and Materials (SSDM 2006)
    • Place of Presentation
      Yokohama
    • Year and Date
      20060913-20060915
  • [Presentation] Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires2006

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, M. Tabe
    • Organizer
      Solid State Devices and Materials (SSDM 2006)
    • Place of Presentation
      Yokohama
    • Year and Date
      20060913-20060915
  • [Presentation] Nanoelectronic Devices: Silicon Single Electron Device2006

    • Author(s)
      R. Nuryadi, M. Tabe
    • Organizer
      1st Int. Conf. on Advanced Material and Practical Nanotechnology
    • Place of Presentation
      Indonesia
    • Year and Date
      20060904-20060905
  • [Presentation] シリコンマルチドット型単電子デバイスとフォトン検出への応用2006

    • Author(s)
      田部道晴
    • Organizer
      電気学会E準部門フィジカルセンサ技術委員会
    • Place of Presentation
      豊橋技術科学大学
    • Year and Date
      20060900
  • [Presentation] 多重接合型シリコン単電子デバイス-フォトン検出と単電子規則転送への展開-2006

    • Author(s)
      田部道晴
    • Organizer
      豊田理化学研究所主催第299回物性談話会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2006-11-06
  • [Presentation] シリコン単電子デバイスの新展開2006

    • Author(s)
      田部道晴、ラトノヌルヤディ、池田浩也
    • Organizer
      日本学術振興会第151委員会
    • Place of Presentation
      仙台
    • Year and Date
      2006-07-10

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Published: 2011-06-18   Modified: 2016-04-21  

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