2009 Fiscal Year Final Research Report
Technology Evolution for Silicon Nano-Electronics
| Project/Area Number |
18063013
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
ZAIMA Shigeaki Nagoya University, 大学院・工学研究科, 教授 (70158947)
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| Co-Investigator(Kenkyū-buntansha) |
HORI Masaru 名古屋大学, 大学院・工学研究科, 教授 (80242824)
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| Co-Investigator(Renkei-kenkyūsha) |
TAKAGI Shinichi 東京大学, 大学院・新領域創成科学研究科, 教授 (30372402)
MASU Kazuya 東京工業大学, 精密工学研究所, 教授 (20157192)
MIYAZAKI Seiichi 広島大学, 大学院・先端物質科学研究科, 教授 (70190759)
HIRAMOTO Toshiro 東京大学, 生産技術研究所, 教授 (20192718)
TABATA Hitoshi 東京大学, 大学院・工学系研究科, 教授 (00263319)
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| Project Period (FY) |
2006 – 2010
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| Keywords | 電子デバイス / 半導体超微細化 / デバイス設計・製造プロセス・超薄膜 / ナノ材料 |
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| Research Abstract |
Silicon ultra-large scale integrated circuits (ULSIs) are now being faced to various physical limits on the scaling. The aim of this research area is establishment of the basic science and technology in realizing nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS) with high performance, new functionality and large-scale integration. This project contributed to the innovation of future silicon nano-electronics with high performance, low power consumption and high flexibility.
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