• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2008 Fiscal Year Self-evaluation Report

Fluctuation in Interface Properties and Noise in Nano-scaled Devices

Research Project

  • PDF
Project/Area Number 18063016
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionShimane University

Principal Investigator

TSUCHIYA Toshiaki  Shimane University, 総合理工学部, 教授 (20304248)

Project Period (FY) 2006 – 2009
Keywordsマイクロ・ナノデバイス / 半導体超微細化 / 電子デバイス・機器 / 揺らぎ / MOS / 界面準位 / 雑音
Research Abstract

ポストスケーリングテクノロジーによる次世代Si系デバイスの高性能化には新材料と新構造の導入が必須であり,デバイス内部にはSiとそれ以外の材料との異種接合が多用されることになる.さらに,デバイスサイズはナノスケール化されるため,伝導キャリアに対するこれら種々の界面の影響が揺らぎを含めて極めて重要となり,デバイス高集積化・高性能化の限界要因になる可能性がある.
本研究では,評価技術開発を含めたナノスケール界面物性の評価,界面準位の数とエネルギー準位の揺らぎ評価,これら揺らぎによるデバイスの雑音への影響などを実験的に解明し,界面物性揺らぎと雑音に関する学術的寄与と共に,次世代高性能Si系デバイス開発に資する.

  • Research Products

    (6 results)

All 2008 2007 2006 Other

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (3 results) Remarks (1 results)

  • [Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007

    • Author(s)
      T.Tsuchiya, S.Mishima, M.Sakuraba, and J.Murota
    • Journal Title

      Jpn.J.Appl.Phys. vol.46, no.8A

      Pages: 5015-5020

    • Peer Reviewed
  • [Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006

    • Author(s)
      T.Tsuchiya, M.Sakuraba, and J.Murota
    • Journal Title

      Thin Solid Films Vol.508, Issues 1-2

      Pages: 326-328

    • Peer Reviewed
  • [Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008

    • Author(s)
      T.Tsuchiya, K.Yoshida, M.Sakuraba, and J.Murota
    • Organizer
      39th IEEE Semiconductor Interface Specialist Conference (IEEE SISC)
    • Place of Presentation
      San Diego, USA
    • Year and Date
      20081211-13
  • [Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008

    • Author(s)
      T.Tsuchiya, K.Yoshida, M.Sakuraba, and J.Murota
    • Organizer
      4th International SiGe Technology and Device Meeting (ISTDM)
    • Place of Presentation
      Hsinchu, Taiwan
    • Year and Date
      20080511-14
  • [Presentation] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006

    • Author(s)
      T.Tsuchiya, S.Mishima, M.Sakuraba, and J.Murota
    • Organizer
      37th IEEE Semiconductor Interface Specialist Conference (IEEE SISC)
    • Place of Presentation
      San Diego, USA
    • Year and Date
      20061207-09
  • [Remarks]

    • URL

      http://www.ecs.shimane-u.ac.jp/~tsuchiya/

URL: 

Published: 2010-06-11   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi