2009 Fiscal Year Final Research Report
Integration of silicon-based nano-scalestructure and its functional memory device application
| Project/Area Number |
18063017
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Hiroshima University |
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Principal Investigator |
MIYAZAKI Seiichi Hiroshima University, 大学院・先端物質科学研究科, 教授 (70190759)
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| Co-Investigator(Kenkyū-buntansha) |
HIGASHI Seiichiro 広島大学, 大学院・先端物質科学研究科, 准教授 (30363047)
MURAKAMI Hideki 広島大学, 大学院・先端物質科学研究科, 助教 (70314739)
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| Project Period (FY) |
2006 – 2009
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| Keywords | 量子ドット / ハイブリッドナノドット / フローティングゲートメモリ |
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| Research Abstract |
With a combination of self-assembling formation of Si-quantum dots (QDs) and the silicidation of pre-grown Si-QDs promoted with an exposure to remote H2 plasma without external heating after ultrathin Ni film formation, a hybrid nanodots structure consisting of Ni-silicide nanodots and Si-QDs was fabricated and applied to a floating gate in MOS (Metal-Oxide-Semiconductor) capacitors. The charge storage capacity of the hybrid nanodots FG is attributable to a deep potential well of the Ni-silicide nanodots, and the charge injection characteristics measured with applications of pulsed gate biases can be interpreted in terms of multistep electron injection to and emission from the Ni-silicide nanodots through the discrete energy states of the underlying Si-QDs.
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