Intrinsic Hetero-interface Structures and Their Formation

2008 Fiscal Year Self-evaluation Report

• Project/Area Number: 18106001
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Nagoya University
• Principal Investigator: TAKEDA Yoshikazu Nagoya University, 大学院・工学研究科, 教授 (20111932)
• Project Period (FY): 2006 – 2010
• Keywords: ヘテロ界面 / 結晶成長 / CTR散乱法 / X線構造解析

Research Abstract

(1) 密接なフィードバックを可能とする結晶成長の「現場」での迅速な界面構造解析環境として、「埋もれた界面」構造をラボレベルで評価できる高性能X線CTR散乱装置の開発、
(2) 結晶成長過程で「埋もれた界面」の形成過程を見る、の2点を目的とした

Research Products

• [Journal Article] Buried Heterostructure of nitride semi-conductors revealed by laboratory level X-ray CTR scattering (2008)
  • Author(s): Y. Takeda, Y. Maeda, T. Mizuno and M. Tabuchi
  • Journal Title: Trans. Mat. Res. Soc. Jpn. Vol.33 Pages: 547-550
  • Peer Reviewed
• [Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semi- conductor hetero-interfaces (2008)
  • Author(s): Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda
  • Journal Title: Trans. Mat. Res. Soc. Jpn. Vol. 33 Pages: 591-594
  • Peer Reviewed
• [Journal Article] Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement (2007)
  • Author(s): M. Tabuchi and Y. Takeda
  • Journal Title: J. Cryst. Growth Vol. 298 Pages: 12-17
  • Peer Reviewed
• [Journal Article] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering (2007)
  • Author(s): M. Tabuchi, Y. Ohtake and Y. Takeda
  • Journal Title: Trans. Mat. Res. Soc. Jpn. Vol.32 No.9 Pages: 219-222
  • Peer Reviewed
• [Journal Article] Study on buried interfaces in semiconductor heterostructures by X-ray reflectivity (invited) (2007)
  • Author(s): Y. Takeda and M. Tabuchi
  • Journal Title: Trans. Mat. Res. Soc. Jpn. Vol. 32, No. 1 Pages: 187-192
  • Peer Reviewed
• [Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices (invited) (2007)
  • Author(s): Y. Takeda, M. Tabuchi and J. Phys.
  • Journal Title: Conference Series Vol.83 Pages: (Art. #012002)
• [Presentation] Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement (2009)
  • Author(s): H. Tameoka, A. Mori, M. Tabuchi and Y. Takeda
  • Organizer: 2009 Indium Phosphide and Related Materials (IPRM2009)
  • Place of Presentation: MA2.4, Newport Beach, CA, USA
  • Year and Date: 20090510-14
• [Presentation] 半導体における埋もれた界面の重要性とその測定・解析法(invited) (2009)
  • Author(s): 竹田美和, 田渕雅夫
  • Organizer: 第56回応用物理学会関係連合講演会, 「X線・中性子による埋もれた界面研究の最前線」
  • Place of Presentation: 筑波大学(31a-D-3)
  • Year and Date: 20090330-0402
• [Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定(EMS賞受賞) (2008)
  • Author(s): 水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
  • Organizer: 第27回電子材料シンポジウム(EMS27)
  • Place of Presentation: ラフォーレ修善寺(K-15)
  • Year and Date: 20080709-11
• [Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds (invited) (2008)
  • Author(s): Y. Takeda, T. Mizuno, H. Kamiya and M. Tabuchi
  • Organizer: 8th Akasaki Research Center Symp.
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2008-11-20
• [Presentation] 窒化物半導体の埋もれたヘテロ構造(invited) (2007)
  • Author(s): 竹田美和, 田渕雅夫
  • Organizer: 第18回日本M R S 学術シンポジウム
  • Place of Presentation: 日本大学理工学部駿河台校舎(G-06-I)
  • Year and Date: 20071207-09
• [Presentation] 実験室系のX線回折装置による半導体へテロ界面のX線CTR散乱測定 (2007)
  • Author(s): 前田義紀, 水野哲也, 森晶子, 竹田美和, 田渕雅夫
  • Organizer: 第18回日本MRS学術シンポジウム
  • Place of Presentation: 日本大学理工学部駿河台校舎(G-P04-M)
  • Year and Date: 20071207-09
• [Presentation] 実験室系のX線源を用いたX線CTR散乱測定による半導体へテロ界面の評価 (2007)
  • Author(s): 前田義紀, 水野哲也, 森晶子, 田渕雅夫, 竹田美和
  • Organizer: 第37回結晶成長国内会議(NCCG-37)
  • Place of Presentation: 北海道大学(06aC09)
  • Year and Date: 20071105-07
• [Presentation] 埋もれた界面の制御について (2007)
  • Author(s): 竹田美和
  • Organizer: 埋もれた界面のX線・中性子解析に関するワークショップ2007
  • Place of Presentation: 東北大学金属材料研究所
  • Year and Date: 20070722-24
• [Presentation] Development of in-situ X-ray non-invasive characterization system on GaN and related compounds (invited) (2007)
  • Author(s): Y. Takeda, Y. Maeda, T. Mizuno and M. Tabuchi
  • Organizer: 7th Akasaki Research Center Symp.
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2007-10-09
• [Presentation] X 線C T R 散乱測定によるGaInN/GaN多層構造中のIn原子分布の解析 (2006)
  • Author(s): 田渕雅夫, 大竹悠介, 竹田美和
  • Organizer: 第17回日本M R S 学術シンポジウム
  • Place of Presentation: 日本大学理工学部駿河台校舎(G-P02)
  • Year and Date: 20061208-10
• [Presentation] X線CTR散乱法によるGaInN/GaN量子井戸構造中のIn組成分布の解析 (2006)
  • Author(s): 大竹悠介, 田渕雅夫, 竹見政義, 岡川広明, 竹田美和
  • Organizer: 第67回応用物理学会学術講演会
  • Place of Presentation: 立命館大学(30p-C-9)
  • Year and Date: 20060829-0901
• [Presentation] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering (invited) (2006)
  • Author(s): M. Tabuchi and Y. Takeda
  • Organizer: 6th Akasaki Research Center Symp.
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2006-12-05
• [Presentation] X線反射率による半導体ヘテロ構造の埋もれた界面の研究(invited)
  • Author(s): 竹田美和
  • Organizer: 第17回日本M R S 学術シンポジウム
  • Place of Presentation: (G-02P02)
• [Remarks]
  • URL: http://mars.numse.nagoya-u.ac.jp/f6/indexf6j.html